An object is to provide a semiconductor device of which a manufacturing process is not complicated and by which cost can be suppressed, by forming a thin film transistor using an oxide semiconductor film typified by zinc oxide, and a manufacturing method thereof. For the semiconductor device, a gate electrode is formed over a substrate; a gate insulating film is formed covering the gate electrode; an oxide semiconductor film is formed over the gate insulating film; and a first conductive film and a second conductive film are formed over the oxide semiconductor film. The oxide semiconductor film has at least a crystallized region in a channel region.

Semiconductor device, and manufacturing method thereof

In fabricating a thin film transistor, an active layer comprising a silicon semiconductor is formed on a substrate having an insulating surface Hydrogen is introduced into The active layer A thin film comprising SiO x N y is formed to cover the active layer and then a gate insulating film comprising a silicon oxide film formed on the thin film comprising SiO x N y  Also, a thin film comprising SiO x N y is formed under the active layer The active layer includes a metal element at a concentration of 1×10 15 to 1×10 19 cm −3 and hydrogen at a concentration of 2×10 19 to 5×10 21 cm −3 

Semiconductor device and method for forming the same

An active matrix display device having a pixel structure in which pixel electrodes, gate wirings and source wirings are suitably arranged in the pixel portions to realize a high numerical aperture without increasing the number of masks or the number of steps. The device comprises a gate electrode and a source wiring on an insulating surface, a first insulating layer on the gate electrode and on the source wiring, a semiconductor layer on the first insulating film, a second insulating layer on the semiconductor film, a gate wiring connected to the gate electrode on the second insulating layer, a connection electrode for connecting the source wiring and the semiconductor layer together, and a pixel electrode connected to the semiconductor layer.

Semiconductor Device and Method of Fabricating the Same

A full color, reflective display having superior saturation and brightness is achieved with a novel display element comprising multichromatic elements. In one embodiment a capsule includes more than three species of particles which differ visually. One embodiment of the display employs three sub-pixels, each sub-pixel comprising a capsule including three species of particles which differ visually. Another embodiment of the display employs color filters to provide different visual states to the user. The display element presents a visual display in response to the application of an electrical signal to at least one of the capsules.

Full color reflective display with multichromatic sub-pixels

A gate-insulated thin film transistor is disclosed. One improvement is that the thin film transistor is formed on a substrate through a blocking layer in between so that it is possible to prevent the transistor from being contaminated with impurities such as alkali ions which exist in the substrate. Also, a halogen is added to either or both of the blocking layer and a gate insulator of the transistor in order that impurities such as alkaline ions, dangling bonds and the like can be neutralized, therefore, the reliability of the device is improved.

Thin-film transistor

A method of fabricating polycrystalline silicon thin film field effect transistors on low cost alkaline earth alumino-silicate glass substrates which can tolerate device processing temperatures of approximately 800° C.

Fabrication of polysilicon fets on alkaline earth alumino-silicate glasses

In an infra-red imaging system, infra-red radiation from a scene is optically collected and directed to form an infra-red image of the scene on an array of bi-state diffraction grating elements. Each bi-state diffraction grating element has an activated state providing diffraction of incident infra-red radiation at a predetermined angle from the incident direction and an alternative inactivated state providing no such diffraction at the predetermined angle. Scanning apparatus sequentially activates the bi-state diffraction grating elements temporarily from their inactivated states to their activated states to produce a scanned infra-red image of the scene in IR radiation diffracted by the elements at the predetermined angle, which is collected and directed to an infra-red detector. The detector provides a coded electrical representation of the scanned infra-red image of the scene to further apparatus which generates therefrom a human-detectable signal. The separation of scanning from detection allows a single detector to be used for the detection of multiple pixels and thus reduces the size, complexity and cost of the detector apparatus. The scanning apparatus may also provide a chopping function by delaying the activation of each bi-state diffraction grating element to its activated state for a predetermined time period after a deactivation to the inactivated state of the previous sequentially activated diffraction grating element. The apparatus may combine IR radiation at two wavelengths by providing separate detectors at the angle of diffraction of each wavelength or by mixing diffraction grating elements of different grating pitch providing diffraction of each wavelength at the same angle to a single IR detector. Some embodiments may provide combination of IR and visible light for an enhanced visible image.

Infra-red imaging system using a diffraction grating array

A new polycrystalline silicon thin-film transistor (TFT) technology using a potentially low-cost glass substrate is reported. Transistors are made using modified conventional n-channel MOS processes at temperatures of 800°C or less, with a final hydrogen implantation step. These transistors show leakage currents of 2 × 10-11A/µm of channel width, ON-to-OFF current ratios of 1 × 104at V ds = 9.0 V, and good dc stability. This combination of polycrystalline silicon transistors on potentially low-cost glass substrates offers a new option in the choice of active device technology for large-area flat-panel liquid crystal displays (LCD's).

Polycrystalline silicon thin-film transistors on a novel 800&#176;C glass substrate

An active matrix transistor array substrate for a reconfigurable vacuum fluorescent display comprising a set of individually addressable pixels and an isolation grid surrounding each pixel of the set and isolating each pixel of the set from all other pixels of the set. The isolation grid is especially advantageous in a high density active matrix display for preventing one pixel that is switched off from inhibiting a neighboring pixel that is switched on from fully illuminating.

Active matrix vacuum fluorescent display using pixel isolation

A thin film field effect transistor has an island of polysilicon on the surface of a substrate, preferably of an insulating material. A layer of silicon dioxide is on the surface of the substrate and surrounds the polysilicon island. The silicon dioxide layer is of substantially uniform thickness and contacts the edge of the polysilicon island. A gate insulator layer, preferably of silicon dioxide, of substantially uniform thickness is on the surface of the polysilicon island. A conductive gate, preferably of doped polysilicon, is on the gate insulator layer and extends across a portion of the polysilicon island. The portions of the polysilicon island at opposite sides of the gate are doped to form the source and drain of the transistor. The transistor is formed by applying a layer of polysilicon on the surface of a substrate and applying a mask over the portion of the polysilicon layer which is to form the island. The uncovered portion of the polysilicon layer is converted to silicon dioxide, such as by heating in an atmosphere containing oxygen. After removing the mask, the gate insulator layer is formed over the surface of the polysilicon island, and the gate is formed over the gate insulator.

Marie I. Harrington

Papers

Fabrication of polysilicon fets on alkaline earth alumino-silicate glasses

Infra-red imaging system using a diffraction grating array

Polycrystalline silicon thin-film transistors on a novel 800°C glass substrate

Active matrix vacuum fluorescent display using pixel isolation

Method of making a thin film transistor

Marie I. Harrington

Papers

Fabrication of polysilicon fets on alkaline earth alumino-silicate glasses

Infra-red imaging system using a diffraction grating array

Polycrystalline silicon thin-film transistors on a novel 800&#176;C glass substrate

Active matrix vacuum fluorescent display using pixel isolation

Method of making a thin film transistor

Polycrystalline silicon thin-film transistors on a novel 800°C glass substrate