M
Mark J. Loboda
Researcher at Dow Corning
Publications - 125
Citations - 2588
Mark J. Loboda is an academic researcher from Dow Corning. The author has contributed to research in topics: Wafer & Dislocation. The author has an hindex of 25, co-authored 125 publications receiving 2511 citations. Previous affiliations of Mark J. Loboda include Raytheon.
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Patent
Method for producing hydrogenated silicon oxycarbide films having low dielectric constant
TL;DR: In this paper, a method for producing hydrogenated silicon oxycarbide (H:SiOC) films having low dielectric constant was proposed. But this method was not suitable for the semiconductor industry.
Journal ArticleDOI
Properties of a ‐ SiO x : H Thin Films Deposited from Hydrogen Silsesquioxane Resins
TL;DR: In this article, a spin-on process with hydrogen silsesquioxane (HSQ) resin is used to deposit amorphous SiO:H dielectric films, and it has been observed that HSQ-based films also provide the added benefit of relative permittivity less than SiO 2, which helps to minimize electrical delay.
Patent
Flat sic semiconductor substrate
TL;DR: In this paper, a mirror-like surface was used for epitaxial deposition of silicon carbide wafers with superior specifications for bow, warp, total thickness variation, local thickness variation and site front side least squares focal plane range (SFQR).
Journal ArticleDOI
New solutions for intermetal dielectrics using trimethylsilane-based PECVD processes
TL;DR: Trimethylsilane, (CH 3 ) 3 SiH, is a non-pyrophoric organosilicon gas that can be easily used to deposit dielectric thin films in standard PECVD systems designed for SiH 4 as mentioned in this paper.
Patent
Silicon carbide metal diffusion barrier layer
TL;DR: In this article, the use of silicon carbide as a barrier layer to prevent the diffusion of metal atoms between adjacent conductors separated by a dielectric material is discussed, which allows for the usage of low resistivity metals and low dielectoric constant dielectrics layers in integrated circuits and wiring boards.