scispace - formally typeset
M

Martin Hermle

Researcher at Fraunhofer Society

Publications -  352
Citations -  12881

Martin Hermle is an academic researcher from Fraunhofer Society. The author has contributed to research in topics: Silicon & Solar cell. The author has an hindex of 53, co-authored 337 publications receiving 10338 citations.

Papers
More filters
Journal ArticleDOI

Reassessment of the Limiting Efficiency for Crystalline Silicon Solar Cells

TL;DR: In this article, the influence of the improved state-of-the-art parameters on the limiting efficiency for crystalline silicon solar cells under 1-sun illumination at 25°C, by following the narrow-base approximation to model ideal solar cells was analyzed.
Journal ArticleDOI

Passivated rear contacts for high-efficiency n-type Si solar cells providing high interface passivation quality and excellent transport characteristics

TL;DR: In this paper, a passivated rear contact is used to replace point contact passivation schemes for high-efficiency n-type crystalline silicon solar cells, which is based on an ultra-thin tunnel oxide (SiO2) and a phosphorus-doped silicon layer.
Journal ArticleDOI

n-Type Si solar cells with passivating electron contact: Identifying sources for efficiency limitations by wafer thickness and resistivity variation

TL;DR: In this article, the efficiency of n-type silicon solar cells with a front side boron-doped emitter and a full-area tunnel oxide passivating electron contact was studied experimentally as a function of wafer thickness W and resistivity ρ b.
Journal ArticleDOI

Tunnel oxide passivated contacts as an alternative to partial rear contacts

TL;DR: In this article, a boron-doped passivated rear contact for p-type solar cells (p-TOPCon) is proposed as an alternative to partial rear contact (PRC) cells.
Journal ArticleDOI

Molybdenum and tungsten oxide: High work function wide band gap contact materials for hole selective contacts of silicon solar cells

TL;DR: In this paper, the high work function metal oxides, tungsten oxide (WOx) and molybdenum oxide (MoOx), were investigated regarding their ability to form a hole-selective contact for a crystalline silicon absorber.