M
Martyna Grydlik
Researcher at Johannes Kepler University of Linz
Publications - 30
Citations - 821
Martyna Grydlik is an academic researcher from Johannes Kepler University of Linz. The author has contributed to research in topics: Quantum dot & Wetting layer. The author has an hindex of 16, co-authored 30 publications receiving 727 citations. Previous affiliations of Martyna Grydlik include Dresden University of Technology.
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Journal ArticleDOI
Lasing from Glassy Ge Quantum Dots in Crystalline Si
Martyna Grydlik,Florian Hackl,Heiko Groiss,Martin Glaser,Alma Halilovic,Thomas Fromherz,Wolfgang Jantsch,Friedrich Schäffler,Moritz Brehm +8 more
TL;DR: It is demonstrated that epitaxially grown Ge quantum dots (QDs) in a defect-free Si matrix show extraordinary optical properties if partially amorphized by Ge-ion bombardment (GIB), in contrast to conventional SiGe nanostructures.
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Key role of the wetting layer in revealing the hidden path of Ge/Si(001) Stranski-Krastanow growth onset
Moritz Brehm,Francesco Montalenti,Martyna Grydlik,G. Vastola,H. Lichtenberger,N. Hrauda,Matthew J. Beck,Thomas Fromherz,Friedrich Schäffler,Leo Miglio,Gerrit E. W. Bauer +10 more
TL;DR: In this article, the authors report on an apparent violation of this thermodynamic understanding of island growth with deposition, and they accurately matched ab initio calculations of layer and surface energies to finite-element method simulations of the elastic energy in islands.
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Recipes for the fabrication of strictly ordered Ge islands on pit-patterned Si(001) substrates
TL;DR: It is demonstrated that the wetting layer between pits can play the role of a stabilizer that inhibits shape transformations of ordered islands and allow us to fabricate perfectly ordered and homogeneous Ge islands on one and the same sample, even if the pit period is varied from a few hundred nanometres to several micrometres.
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Efficient room-temperature light-emitters based on partly amorphised Ge quantum dots in crystalline Si
Martyna Grydlik,Florian Hackl,Heiko Groiss,Martin Glaser,Alma Halilovic,Thomas Fromherz,Wolfgang Jantsch,Friedrich Schäffler,Moritz Brehm +8 more
TL;DR: In this paper, epitaxially grown Ge quantum dots (QDs) in a fully coherent Si matrix show extraordinary optical properties if partially amorphised by Ge-ion bombardment (GIB).
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Site-controlled and advanced epitaxial Ge/Si quantum dots: fabrication, properties, and applications.
Moritz Brehm,Martyna Grydlik +1 more
TL;DR: It is proposed that the mandatory addressability of the light emitters can be achieved by a combination of organized QD growth assisted by templated self-assembly, and advanced inter-QD defect engineering to boost the optical emissivity of group-IV QDs at room-temperature.