M
Masaharu Edo
Publications - 29
Citations - 654
Masaharu Edo is an academic researcher. The author has contributed to research in topics: Ion implantation & Vacancy defect. The author has an hindex of 11, co-authored 25 publications receiving 428 citations.
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Journal ArticleDOI
The origins and properties of intrinsic nonradiative recombination centers in wide bandgap GaN and AlGaN
Shigefusa F. Chichibu,Shigefusa F. Chichibu,Akira Uedono,Kazunobu Kojima,Hirotaka Ikeda,Kenji Fujito,Shinya Takashima,Masaharu Edo,K. Ueno,Shoji Ishibashi +9 more
TL;DR: In this article, the authors compared the near-band-edge emission in various quality GaN samples, in order to identify the origin and to determine the capture-cross-section of the major intrinsic nonradiative recombination centers (NRCs).
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Nitrogen vacancies as a common element of the green luminescence and nonradiative recombination centers in Mg-implanted GaN layers formed on a GaN substrate
Kazunobu Kojima,Shinya Takashima,Masaharu Edo,Katsunori Ueno,Mitsuaki Shimizu,Tokio Takahashi,Shoji Ishibashi,Akira Uedono,Shigefusa F. Chichibu,Shigefusa F. Chichibu +9 more
TL;DR: The photoluminescences of ion-implanted (I/I) and epitaxial Mg-doped GaN (GaN:Mg) are compared in this paper.
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Vacancy-type defects and their annealing behaviors in Mg-implanted GaN studied by a monoenergetic positron beam
Akira Uedono,Shinya Takashima,Masaharu Edo,Katsunori Ueno,Hideaki Matsuyama,Hiroshi Kudo,Hiroshi Naramoto,Shoji Ishibashi +7 more
TL;DR: In this paper, the defect reaction occurred between not only the defects introduced by the implantation but also the defect introduced by an excess Mg-doping, and the depth distribution of vacancy-type defects agreed well with that of implanted Mg, and no large change in the distribution was observed up to 1300°C annealing.
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Control of the inversion-channel MOS properties by Mg doping in homoepitaxial p-GaN layers
Shinya Takashima,Katsunori Ueno,Hideaki Matsuyama,Takuro Inamoto,Masaharu Edo,Tokio Takahashi,Mitsuaki Shimizu,Kiyokazu Nakagawa +7 more
TL;DR: In this article, the impact of [Mg] on the MOS channel properties was investigated and it was demonstrated that the threshold voltage (V th) can be controlled by [mg along with the theoretical curve, and a maximum field effect mobility of 123 cm2 V−1 s−1 is achieved on [M g] = 6.5 × 1016 cm−3 layer with V th = 3.0 V.
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Demonstration of 1200 V/1.4 mΩ cm2 vertical GaN planar MOSFET fabricated by an all ion implantation process
TL;DR: In this article, the authors presented a vertical GaN planar MOSFET fabricated by an all ion implantation process, which showed an on-resistance of 2.78 mΩ cm2 and a breakdown voltage of 1200 V.