Process gas discharged from a bypass pipe to a gas exhaust system can be prevented from diffusing back to the inside of a process chamber without having to install a dedicated vacuum pump at the downstream side of the bypass pipe. The substrate processing apparatus includes a process chamber accommodating a substrate, a gas supply system supplying process gas from a process gas source to the process chamber for processing the substrate, a gas exhaust system configured to exhaust the process chamber, two or more vacuum pumps installed in series at the gas exhaust system, and a bypass pipe connected between the gas supply system and the gas exhaust system. The most upstream one of the vacuum pumps is a mechanical booster pump, and the bypass pipe is connected between the mechanical booster pump and the rest vacuum pumps located at a downstream side of the mechanical booster pump.

Substrate Processing Apparatus

A robot hand according to embodiments includes a holding unit, a bottom end, an optical sensor, and a reflecting member. The holding unit holds a thin-plate-shaped workpiece. In the bottom end, its leading part is coupled to the holding unit and its tail part is rotatably coupled to an arm. The optical sensor is provided in the bottom end and has a projector and a photoreceiver. The reflecting member is provided in the holding unit. The reflecting member reflects light from the projector, makes it pass through the holding area of the workpiece, and makes it reach the photoreceiver to form an optical path.

Robot hand and robot

Disclosed is a substrate processing apparatus capable of suppressing generation of plasma in the space between a moving electrode and an end wall at one side of a cylindrical chamber. The substrate processing apparatus includes a cylindrical chamber to receive a wafer, a shower head movable along a central axis of the chamber inside the chamber, a susceptor opposing the shower head in the chamber, and a flexible bellows connecting the shower head to a cover of the chamber, wherein a high frequency power is applied to a processing space presented between the shower head and the susceptor, processing gas is introduced into the processing space, the shower head and the side wall of the chamber are non-contact to each other, and a bypass member is installed electrically connecting the shower head and the cover or the side wall of the chamber.

Substrate processing apparatus

A substrate processing equipment comprises two pod supporting stages and two independently operable pod door openers. Each pod supporting stage is capable of placing thereon a pod for containing substrates therein. Each pod door openers having means for permitting access to the substrates inside the pod placed on a corresponding pod supporting stage.

Dual loading port semiconductor processing equipment

There is provided a batch type heat treatment system, control method and heat treatment method capable of appropriately coping with a multi-product small-lot production. A reaction tube 2 comprises a plurality of heaters 31 through 35 and a plurality of temperature sensors, and houses therein a wafer boat 23. A control part 100 stores therein many mathematical models for estimating (calculating) the temperature of wafers W in the reaction tube 2, in accordance with the number and arranged position of the wafers W mounted on the wafer boat 23, and many target temperature trajectories. If the wafer boat 23 is loaded in the reaction tube 2, a mathematical model and a target temperature trajectory corresponding to the number and arranged position of the mounted wafers W are read. If a deposition process is started, the output of a temperature sensor S and the model are used for estimating the temperature of the wafers W in the reaction tube 2, and the powers to be supplied to the heaters 31 through 35 are separately controlled so that the estimated temperature approaches the target temperature trajectory.

Batch type heat treatment system, method for controlling same, and heat treatment method

PROBLEM TO BE SOLVED: To obtain a substrate treatment equipment with a substrate-carrying transfer mechanism wherein the stroke of an arm is loNg, an operating region of a movable part is small and an arm warps and vibrates only slightly. SOLUTION: When a pulley PU4 is driven by a motor built in a head 24 and rotates in one direction, a boom 42 connected to a belt BE goes ahead in an AB direction and protrudes from the head 24. When the boom 42 protrudes from the head 24, the belt BE put on a pulley PU1 of the bottom 42 also rotates, since it is fixed to the side of the head 24 via a stopping member 47, and a holder member 41 connected to the belt BE goes ahead to the AB direction and protrudes from the boom 42. As a result, the holder member 41 moves to a position of a solid line, wherein the transfer arm 40 is expanded most.

Substrate treatment equipment

PROBLEM TO BE SOLVED: To provide a substrate processing equipment wherein the degradation in pattern precision at exposure due to contamination on the rear surface of substrate is prevented by washing the rear surface of substrate before it is transported into an aligner. SOLUTION: Relating to a substrate processing equipment, its first layer part is provided with an indexer part 2, a pair of spin-coater 4, a pair of spin- developer 5, a washing unit 6, an inversion unit 7, and an interface part 3, and the second layer part allocated above the first layer part is provided with twelve thermal processing units 9 allocated in multistage. At the center part of the substrate processing equipment a substrate transportation mechanism 1 which transports a substrate over the first and second layer parts is allocated. The substrate is inverted by the inversion unit 7 before it is transported from the interface part 3 to a stepper, for washing of the rear surface by the washing unit 6.

Substrate processing equipment

PROBLEM TO BE SOLVED: To make the treating hystereses of a plurality of substrates in the same lot equal to each other even when a substrate treating section which requires long substrate treating time as compared with the time required by a substrate transporting robot for making a round trip through a plurality of substrate treating sections without waiting by performing required treatment on a substrate transporting means for the substrate treating sections. SOLUTION: When, for example, a parallel treatment flow exists and the longest substrate treating time is longer than a standard round transporting time, the parallel treatment flow is discriminated (S1) and the standard transporting time is rewritten (S2). Then the standard time required by a substrate transporting robot for making a round trip through a plurality of substrate treating sections is calculated (S3) and the longest substrate treating time is selected from among of the substrate treating time of the substrate treating sections (S4). The standard time required by the robot for making one round trip through the substrate treating sections is compared with the longest substrate treating time (S5) and the time required by the robot for making one round trip is rewritten (S6 and S7). Then the substrate transporting speed of the robot is controlled.

Method and device for treating substrate

PROBLEM TO BE SOLVED: To provide a heat-treating device for making uniform temperature in the surface of a substrate. SOLUTION: A substrate-heating device is provided with a heating plate 1 for heating a substrate. The heating plate 1 is provided with a substrate- supporting plate 15 for supporting the substrate horizontally, a plurality of Peltier elements 16 for absorbing and radiating heat, and a retention plate for retaining the Peltier elements 16. The plurality of Peltier elements 16 are arranged between the lower surface of the substrate-supporting plate 15 and the upper surface of the retention plate. The Peltier elements 16 are connected in parallel to a power supply circuit 32 via a conductor 34 and a correction circuit 33. The correction circuit 33 consists of an element for adjusting the amount of current of a variable resistor or the like, thus individually correcting current being supplied to the Peltier elements 16 and uniformly setting temperature distribution on the upper surface of the substrate-supporting plate 15.

Heat-treating device

PROBLEM TO BE SOLVED: To remove contamination on an end face of a substrate which cannot be removed only with chemical cleaning process. SOLUTION: A cleaning chamber 31 is installed within a cleaning apparatus body 30 and a substrate W is included within the cleaning chamber 31 through an aperture 35. The cleaning chamber 31 is provided with a brush 40 to freely rotate and it performs cleaning of the end face of substrate through close contact with the end face of the rotating substrate W. The cleaning chamber 31 communicates with cleaning solution supplying paths 32a, 32b to supply a cleaning solution and the cleaning solution is supplied from the upper and lower portions of the end face of the substrate W accommodated within the cleaning chamber 31. The brush 40 performs cleaning of the end face of substrate while being supplied with the cleaning solution. Moreover, the cleaning chamber 31 is connected with an exhaust pipe 33 for evacuating the inside thereof in order to prevent exhaust of cleaning solution to outside from the aperture 35. COPYRIGHT: (C)2003,JPO

Masami Otani

Papers

Substrate treatment equipment

Substrate processing equipment

Method and device for treating substrate

Heat-treating device

Substrate end face cleaning apparatus and substrate processing apparatus