Process gas discharged from a bypass pipe to a gas exhaust system can be prevented from diffusing back to the inside of a process chamber without having to install a dedicated vacuum pump at the downstream side of the bypass pipe. The substrate processing apparatus includes a process chamber accommodating a substrate, a gas supply system supplying process gas from a process gas source to the process chamber for processing the substrate, a gas exhaust system configured to exhaust the process chamber, two or more vacuum pumps installed in series at the gas exhaust system, and a bypass pipe connected between the gas supply system and the gas exhaust system. The most upstream one of the vacuum pumps is a mechanical booster pump, and the bypass pipe is connected between the mechanical booster pump and the rest vacuum pumps located at a downstream side of the mechanical booster pump.

Substrate Processing Apparatus

After forming a resist film including a hygroscopic compound, pattern exposure is performed by selectively irradiating the resist film with exposing light while supplying water onto the resist film. After the pattern exposure, the resist film is developed so as to form a resist pattern.

Pattern formation method

A heating plate for a substrate support assembly in a semiconductor plasma processing apparatus, comprises multiple independently controllable planar heater zones arranged in a scalable multiplexing layout, and electronics to independently control and power the planar heater zones. Each planar heater zone uses at least one diode as a heater element. A substrate support assembly in which the heating plate is incorporated includes an electrostatic clamping electrode and a temperature controlled base plate. Methods for manufacturing the heating plate include bonding together ceramic or polymer sheets having planar heater zones, power supply lines, power return lines and vias.

Heating plate with planar heater zones for semiconductor processing

An apparatus for wet processing individual wafers comprising; a means for holding the wafer; a means for providing acoustic energy to a non-device side of the wafer; and a means for flowing a fluid onto a device side of the wafer.

Method and apparatus for wafer cleaning

An automated process for preparing and amplifying a target nucleic acid sequence within a stand-alone unit.

Automated process for isolating and amplifying a target nucleic acid sequence

A plurality of cleaning devices of the same type are attached to one support arm. The cleaning devices are simultaneously moved over a surface to be cleaned of a substrate supported and spun by a substrate supporting and spinning mechanism. Thus, the same type of cleaning devices share the task of cleaning the entire surface of the substrate, thereby to improve cleaning efficiency and shorten cleaning time. Different types of cleaning devices may be attached to the support arm for simultaneous cleaning of the entire surface of the substrate. Where different types of cleaning brushes are attached to the support arm, a cleaning operation may be carried out by simultaneously using cleaning brushes of optimal hardness for different regions on the substrate surface.

Substrate cleaning apparatus and method

A unit arrangement part comprises a chemical cabinet on its lowermost part, while coating units for forming a resist film on a substrate and developing units for developing the substrate after exposure are arranged on four corners of an apparatus above the chemical cabinet. Further, multistage thermal processing units for thermal-processing the substrate are arranged on front and rear portions of the apparatus above these wet processing units. A cleaning unit for supplying a cleaning liquid such as pure water and cleaning the substrate is arranged on a front side of the apparatus between the coating units as a substrate processing unit. Thus provided is a substrate processing apparatus having excellent workability in maintenance with a high degree of freedom in arrangement of processing units.

Substrate processing apparatus, substrate transport apparatus and substrate transfer apparatus

A substrate heat-treating apparatus includes a heat-treating plate, and support pins extending through the heat-treating plate to be vertically movable relative thereto. The support pins support each substrate at a lower surface thereof such that edges of the substrate are at a higher level than a central region of the substrate. This construction facilitates air flows into and out of a space between the lower surface of the substrate and the upper surface of the heat-treating plate when the substrate is vertically moved.

Substrate heat-treating apparatus

PROBLEM TO BE SOLVED: To obtain a substrate treatment equipment with a substrate-carrying transfer mechanism wherein the stroke of an arm is loNg, an operating region of a movable part is small and an arm warps and vibrates only slightly. SOLUTION: When a pulley PU4 is driven by a motor built in a head 24 and rotates in one direction, a boom 42 connected to a belt BE goes ahead in an AB direction and protrudes from the head 24. When the boom 42 protrudes from the head 24, the belt BE put on a pulley PU1 of the bottom 42 also rotates, since it is fixed to the side of the head 24 via a stopping member 47, and a holder member 41 connected to the belt BE goes ahead to the AB direction and protrudes from the boom 42. As a result, the holder member 41 moves to a position of a solid line, wherein the transfer arm 40 is expanded most.

Substrate treatment equipment

PROBLEM TO BE SOLVED: To provide a technique by which time is suitably determined when a next substrate is to be carried in while suppressing a decrease in efficiency of substrate manufacture. SOLUTION: A substrate processing apparatus 1 acquires heat processing conditions of a substrate W to be processed first by a heat processing section 35, performs heat processing under the processing conditions, and carries the substrate out of the heat processing section 35. When there is a substrate W to be processed next by the heat processing section 35, the substrate processing apparatus 1 acquires heat processing conditions of the next substrate W and determines whether the processing conditions of the first substrate W and the processing conditions of the next substrate W are in a specified combination. When they are in a specified combination, the substrate processing apparatus 1 performs wait processing for making the next substrate W wait at a prescribed position (substrate wait position 34) for a prescribed time. Then a local conveyance mechanism 36 carries the next substrate W in the heat processing section 35 the prescribed time later. COPYRIGHT: (C)2010,JPO&INPIT

Morita Akihiko

Papers

Substrate cleaning apparatus and method

Substrate processing apparatus, substrate transport apparatus and substrate transfer apparatus

Substrate heat-treating apparatus

Substrate treatment equipment

Substrate processing apparatus, and substrate processing method