M
Masayoshi Takemi
Researcher at Mitsubishi Electric
Publications - 46
Citations - 467
Masayoshi Takemi is an academic researcher from Mitsubishi Electric. The author has contributed to research in topics: Layer (electronics) & Metalorganic vapour phase epitaxy. The author has an hindex of 10, co-authored 45 publications receiving 464 citations. Previous affiliations of Masayoshi Takemi include Mitsubishi.
Papers
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Patent
Substrate holder for MOCVD
TL;DR: In this article, a GaAs polycrystalline film with a flat surface is grown on a part of the surface of the molybdenum holder body where the wafer is absent.
Patent
Semiconductor light-emitting devices
TL;DR: In this article, an n-type diffusion blocking layer of a nitride compound semiconductor material is located between the active layer and the p-type cladding layer and is In x Al y Ga 1−x−y N, where x ≥ 0, y ≥ 0 and (x+y) < 1.
Patent
Semiconductor lasers and methods for fabricating semiconductor lasers
Masayoshi Takemi,Hirotaka Kizuki +1 more
TL;DR: In this paper, an integrated semiconductor laser and light modulator that has a high reliability and long lifetime is presented. But the light modulators are not considered in this paper.
Journal ArticleDOI
Selective-area MOCVD growth for 1.3 μm laser diodes with a monolithically integrated waveguide lens
T. Takiguchi,T. Itagaki,Masayoshi Takemi,A. Takemoto,Yasunori Miyazaki,Kimitaka Shibata,Yoshihiro Hisa,K. Goto,Yutaka Mihashi,S. Takamiya,Masao Aiga +10 more
TL;DR: In this paper, a tapered thickness profile and a high thickness enhancement ratio of 3.5 in the waveguide were achieved for a narrow beam and a low threshold current for a 1.3 μm laser diode monolithically integrated with a tape-red thickness waveguide lens.
Patent
Semiconductor device and manufacturing method therefor
TL;DR: In this article, a laser diode includes a first n-cladding layer disposed on and lattice matched to an n-semiconductor substrate, where the inserted layer has the same composition ratios of Al and Ga (and P) as the first NCL as well as a lower composition ratio of In than the first nCL.