An object is to provide a semiconductor device of which a manufacturing process is not complicated and by which cost can be suppressed, by forming a thin film transistor using an oxide semiconductor film typified by zinc oxide, and a manufacturing method thereof. For the semiconductor device, a gate electrode is formed over a substrate; a gate insulating film is formed covering the gate electrode; an oxide semiconductor film is formed over the gate insulating film; and a first conductive film and a second conductive film are formed over the oxide semiconductor film. The oxide semiconductor film has at least a crystallized region in a channel region.

Semiconductor device, and manufacturing method thereof

Process gas discharged from a bypass pipe to a gas exhaust system can be prevented from diffusing back to the inside of a process chamber without having to install a dedicated vacuum pump at the downstream side of the bypass pipe. The substrate processing apparatus includes a process chamber accommodating a substrate, a gas supply system supplying process gas from a process gas source to the process chamber for processing the substrate, a gas exhaust system configured to exhaust the process chamber, two or more vacuum pumps installed in series at the gas exhaust system, and a bypass pipe connected between the gas supply system and the gas exhaust system. The most upstream one of the vacuum pumps is a mechanical booster pump, and the bypass pipe is connected between the mechanical booster pump and the rest vacuum pumps located at a downstream side of the mechanical booster pump.

Substrate Processing Apparatus

A method of and apparatus for providing tunable gas injection in a plasma processing system ( 10, 10′ ). The apparatus includes a gas injection manifold ( 50 ) having a pressurizable plenum ( 150 ) and an array of adjustable nozzle units ( 250 ), or an array of non-adjustable nozzles ( 502, 602 ), through which gas from the plenum can flow into the interior region ( 40 ) of a plasma reactor chamber ( 14 ) capable of containing a plasma ( 41 ). The adjustable nozzle units include a nozzle plug ( 160 ) arranged within a nozzle bore ( 166 ). A variety of different nozzle units are disclosed. The nozzle plugs are axially translatable to adjust the flow of gas therethrough. In one embodiment, the nozzle plugs are attached to a plug plate ( 154 ), which is displacable relative to an injection plate ( 124 ) via displacement actuators ( 170 ) connecting the two plates. The displacement actuators are controlled by a displacement actuator control unit ( 180 ), which is in electronic communication with a plasma processing system control unit ( 80 ). The gas flow into the chamber interior region is preferably controlled by monitoring the pressure in the plenum and in the chamber and adjusting the nozzle units accordingly. Where the nozzle units are not adjustable, a portion of the nozzles are sized to a first flow condition, and another portion of the nozzles are sized to a second flow condition.

Method of and apparatus for tunable gas injection in a plasma processing system

Embodiments related to managing the process feed conditions for a semiconductor process module are provided. In one example, a gas channel plate for a semiconductor process module is provided. The example gas channel plate includes a heat exchange surface including a plurality of heat exchange structures separated from one another by intervening gaps. The example gas channel plate also includes a heat exchange fluid director plate support surface for supporting a heat exchange fluid director plate above the plurality of heat exchange structures so that at least a portion of the plurality of heat exchange structures are spaced from the heat exchange fluid director plate.

Process feed management for semiconductor substrate processing

Reactors for vapor deposition of materials onto a microelectronic workpiece, systems that include such reactors, and methods for depositing materials onto microelectronic workpieces. In one embodiment, a reactor for vapor deposition of a material comprises a reaction chamber and a gas distributor. The reaction chamber can include an inlet and an outlet. The gas distributor is positioned in the reaction chamber. The gas distributor has a compartment coupled to the inlet to receive a gas flow and a distributor plate including a first surface facing the compartment, a second surface facing the reaction chamber, and a plurality of passageways. The passageways extend through the distributor plate from the first surface to the second surface. Additionally, at least one of the passageways has at least a partially occluded flow path through the plate. For example, the occluded passageway can be canted at an oblique angle relative to the first surface of the distributor plate so that gas flowing through the canted passageway changes direction as it passes through the distributor plate.

Apparatus and method for depositing materials onto microelectronic workpieces

A metal organic compound container apparatus for containing a liquid metal organic compound, receiving a carrier gas, and producing a carrier gas stream saturated with vapor of the metal organic compound including a container for containing a liquid metal organic compound; an inlet pipe for introducing a carrier gas into the container, the inlet pipe having an end for immersion in the metal organic compound; a carrier gas flow rate controller for controlling carrier gas flow into the inlet pipe; a first exhaust pipe for exhausting carrier gas from the container at a first flow rate, the first exhaust pipe having an end not contacting the metal organic compound; a first gas flow rate controller for controlling one of pressure and the first flow rate of the carrier gas through the first exhaust pipe; a second exhaust pipe for exhausting carrier gas from the container at a second flow rate, the second exhaust pipe having an end not contacting the metal organic compound; and a second gas flow rate controller for controlling the second flow rate.

Container for liquid metal organic compound

A substrate holder employed for MOCVD and supporting a wafer on which crystal growth proceeds includes a molybdenum holder body, a GaAs polycrystalline film with a flat surface grown on a part of the surface of the molybdenum holder body where the wafer is absent, and an InP polycrystalline film grown on the GaAs polycrystalline film. Each of the polycrystalline films is grown to a thickness of 0.3 μm or more at a temperature higher than the epitaxial growth temperature of 575° C. During the MOCVD process, the emissivity of the molybdenum substrate holder is stable at a value near the emissivity of the wafer on the substrate holder and, therefore, the decomposition ratio of PH3 gas on the substrate holder is stable at a value near the decomposition ratio on the wafer, whereby any variation of the incorporation ratio of P atoms in the grown InGaAsP, i.e., a variation of the composition of the InGaAsP, is reduced and run-to-run variations of the composition of the grown crystal are reduced.

Substrate holder for MOCVD

We have studied the effect of thermal cyclic annealing (TCA) on the crystal quality improvement of MOCVD grown InP on GaAs substrates. The crystal quality has been evaluated by the etch pit density (EPD), X-ray diffraction and photoluminescence (PL) measurement. It is found that the TCA is effective in reducing the dislocation density, and that the annealing at 700°C is essential to confine the point defects near the InP/GaAs interface. The EPD is reduced from 6×107 cm-2 to 3×107 cm-2, and the defect-related PL peak intensity is decreased below the residual level in the 5 µm-thick InP on GaAs.

Improvement of InP Crystal Quality on GaAs Substrates by Thermal Cyclic Annealing

Influence of oxygen on the threshold current of AlGaAs multiple quantum well lasers grown by metalorganic chemical vapor deposition

A method for fabricating a semiconductor laser includes forming a double heterojunction structure on a first conductivity type semiconductor substrate; forming the double heterojunction structure into a stripe mesa shape by selective etching; successively growing a first conductivity type layer, a second conductivity type current blocking layer, and a first conductivity type current blocking layer on opposite sides of the mesa to embed the mesa; and adding an impurity from a surface of the first conductivity type current blocking layer to form impurity doped regions that electrically separate the second conductivity type current blocking layer from an upper part of the mesa at opposite sides of the mesa.

Nobuaki Kaneno

Papers

Container for liquid metal organic compound

Substrate holder for MOCVD

Improvement of InP Crystal Quality on GaAs Substrates by Thermal Cyclic Annealing

Influence of oxygen on the threshold current of AlGaAs multiple quantum well lasers grown by metalorganic chemical vapor deposition

Method of making semiconductor laser