M
Masayuki Ishikawa
Researcher at Mitsubishi Heavy Industries
Publications - 252
Citations - 4468
Masayuki Ishikawa is an academic researcher from Mitsubishi Heavy Industries. The author has contributed to research in topics: Layer (electronics) & Active layer. The author has an hindex of 36, co-authored 251 publications receiving 4455 citations. Previous affiliations of Masayuki Ishikawa include Toshiba & Nitto Denko.
Papers
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Journal ArticleDOI
Room temperature cw operation of InGaP/InGaAlP visible light laser diodes on GaAs substrates grown by metalorganic chemical vapor deposition
TL;DR: In this article, the first room-temperature operation for InGaP/InGaAlP double heterostructure (DH) laser diodes on GaAs substrates was achieved.
Patent
Light-emitting device and method for manufacturing same
Yoshiaki Sugizaki,Hideki Shibata,Masayuki Ishikawa,Hideo Tamura,Tetsuro Komatsu,Akihiro Kojima +5 more
TL;DR: In this paper, a multilayer body including a light emitting layer is formed, and a dielectric film on a second surface side opposite to the first surface of the multi-layer body is formed having first and second openings on a p-side electrode and an n-side electrodes.
Journal ArticleDOI
Room Temperature Pulsed Operation of Nitride Based Multi-Quantum-Well Laser Diodes with Cleaved Facets on Conventional C-Face Sapphire Substrates
Kazuhiko Itaya,Masaaki Onomura,Johji Nishio,Lisa Sugiura,Shinji Saito,Mariko Suzuki,John Rennie,Shinya Nunoue,Masahiro Yamamoto,Hidetoshi Fujimoto,Yoshihiro Kokubun,Yasuo Ohba,Gen-ichi Hatakoshi,Masayuki Ishikawa +13 more
TL;DR: In this article, the authors demonstrate room temperature pulsed operation of nitride based multi-quantum-well (MQW) laser diodes with cleaved mirror facets grown on a conventional C-face sapphire substrate.
Patent
Nitride-based semiconductor element and method for manufacturing the same
TL;DR: In this article, a first layer of a nitride-based compound semiconductor element comprises a mask formed on the first layer and has a plurality of opening portions, and a second layer consisting of a desired element structure on the semiconductor layer.
Journal ArticleDOI
Growth of high-quality inGaAIP epilayers by MOCVD using methyl metalorganics and their application to visible semiconductors lasers
TL;DR: In this article, the effects of growth procedure and conditions (growth temperature, V/III ratio, etc.) were investigated by low-pressure MOCVD technique, using trimethyl metalorganics.