M
Medini Padmanabhan
Researcher at Princeton University
Publications - 30
Citations - 1769
Medini Padmanabhan is an academic researcher from Princeton University. The author has contributed to research in topics: Electron & Composite fermion. The author has an hindex of 14, co-authored 30 publications receiving 1551 citations. Previous affiliations of Medini Padmanabhan include Indian Institute of Science & Rhode Island College.
Papers
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Journal ArticleDOI
Graphene-MoS2 hybrid structures for multifunctional photoresponsive memory devices
Kallol Roy,Medini Padmanabhan,Srijit Goswami,Srijit Goswami,T. Phanindra Sai,Gopalakrishnan Ramalingam,Gopalakrishnan Ramalingam,Srinivasan Raghavan,Arindam Ghosh +8 more
TL;DR: Graphene-on-MoS2 binary heterostructures display remarkable dual optoelectronic functionality, including highly sensitive photodetection and gate-tunable persistent photoconductivity, and may lead to new graphene-based optoeLECTronic devices that are naturally scalable for large-area applications at room temperature.
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Valley Polarization and Susceptibility of Composite Fermions around a Filling Factor ν=(3)/(2)
N. C. Bishop,Medini Padmanabhan,K. Vakili,Yakov Shkolnikov,E. P. De Poortere,Mansour Shayegan +5 more
TL;DR: In this article, magnetotransport measurements of fractional quantum Hall states in an AlAs quantum well around a Landau level filling factor demonstrate that the quasiparticles are composite fermions (CFs) with a valley degree of freedom.
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Optically active heterostructures of graphene and ultrathin MoS2
TL;DR: In this paper, the authors present a new class of hybrid devices where the constituents are graphene and ultrathin molybdenum di-sulphide (MoS 2 ).
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Transference of transport anisotropy to composite fermions
TL;DR: In this paper, the properties of composite fermions should be independent of those of the electrons and flux quanta from which they emerge, but the results of anisotropic transport in AlAs quantum wells suggest this is not the case.
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Spin–valley phase diagram of the two-dimensional metal–insulator transition
TL;DR: In this paper, the role of spin and valley degrees of freedom in the 2D metal-insulator transition was investigated. But the role was not directly investigated, except for the role played by the valley polarization.