An active matrix display device having a pixel structure in which pixel electrodes, gate wirings and source wirings are suitably arranged in the pixel portions to realize a high numerical aperture without increasing the number of masks or the number of steps. The device comprises a gate electrode and a source wiring on an insulating surface, a first insulating layer on the gate electrode and on the source wiring, a semiconductor layer on the first insulating film, a second insulating layer on the semiconductor film, a gate wiring connected to the gate electrode on the second insulating layer, a connection electrode for connecting the source wiring and the semiconductor layer together, and a pixel electrode connected to the semiconductor layer.

Semiconductor Device and Method of Fabricating the Same

A coated medical device ( 10 ) including a structure ( 12 ) adapted for introduction into a passage or vessel of a patient. The structure is formed of preferably a non-porous base material ( 14 ) having a bioactive material layer ( 18 ) disposed thereon. The medical device is preferably an implantable stent or balloon ( 26 ) of which the bioactive material layer is deposited thereon. The stent can be positioned around the balloon and another layer of the bioactive material posited over the entire structure and extending beyond the ends of the positioned stent. The ends of the balloon extend beyond the ends of the stent and include the bioactive material thereon for delivering the bioactive material to the cells of a vessel wall coming in contact therewith. The balloon further includes a layer of hydrophilic material ( 58 ) positioned between the base and bioactive material layers of the balloon.

Coated medical device

A photomask blank is provided comprising an etch stop film which is disposed on a transparent substrate and is resistant to fluorine dry etching and removable by chlorine dry etching, a light-shielding film disposed on the etch stop film and including at least one layer composed of a transition metal/silicon material, and an antireflective film disposed on the light-shielding film. When the light-shielding film is dry etched to form a pattern, pattern size variation arising from pattern density dependency is reduced, so that a photomask is produced at a high accuracy.

Photomask blank and photomask

The invention provides low-emissivity stacks being characterized by a low solar heat gain coefficient (SHGC), enhanced aesthetics, mechanical and chemical durability, and a tolerance for tempering or heat strengthening. The invention moreover provides low-emissivity coatings comprising, in order outward from the substrate a first dielectric layer; a first nucleation layer; a first Ag layer; a first barrier layer; a second dielectric layer; a second nucleation layer; a second Ag layer; a second barrier layer; a third dielectric layer; and optionally, a topcoat layer, and methods for depositing such coatings on substrates.

Low emissivity coating with low solar heat gain coefficient, enhanced chemical and mechanical properties and method of making the same

A light-shielding film 2 is formed on a transparent substrate 1. A hard mask film 3 is formed on this light-shielding film 2. The entire hard mask film 3 is made of a chromium-containing material including tin. The film made a chromium-containing material including tin can cause a significant increase in the etching rate at the time of chlorine-containing dry etching. Furthermore, comparing with a film made of a chromium-containing material in which part of chromium is replaced with a light element, the above film has an equal or higher level of etching resistance to fluorine-dry etching. Thus, burden on a photoresist at the time of etching the chromium-containing material film can be reduced. Therefore, high-precision pattern transfer can be performed even in the case that the resist film is thinned.

Photomask blank and method for manufacturing photomask

In a half-tone type phase shift mask blank in which a semi-transparent film is formed on a transparent substrate, and the semi-transparent film serves to shift phase of a first optical light beam which transmits the semi-transparent film for a second optical light beam which directly transmits the transparent substrate and further, serves to reduce strength of the first optical light beam, the semi-transparent film includes silicon and nickel, and at least one selected from the group consisting of nitrogen, oxygen and hydrogen, and the relationship between the silicon and the nickel is specified by a formula in which a rate of [atom % of the nickel in the film] for [atom % of the nickel in the film+atom % of the silicon in the film] falls within the range between 0.15 and 0.5.

Phase shift mask and phase shift mask blank

A lithography mask blank used as a material for producing a lithography mask includes at least one thin film which is formed on a substrate and has a desired function. The blank has a nitrogen-containing thin film as the above-mentioned thin film and an ammonium ion production preventing layer for preventing production of ammonium ions, which is formed on the nitrogen-containing thin film or at least at a surface portion of the nitrogen-containing thin film and which is exposed on the surface of the lithography mask after the lithography mask is manufactured.

Lithography mask blank

PROBLEM TO BE SOLVED: To achieve resistance to the high-temperature water of 80°C concerning an optical semi-transmission film which is optically designed using nitrogen, metal, and silicon as main components. SOLUTION: In a phase shift mask blank, an optical semi-transmission film which has a predetermined transmission to an exposure wavelength, and is optically designed using nitrogen, metal, and silicon as main components is formed on a transparent substrate. The phase shift mask blank contains oxygen in the optical semi-transmission film composed mainly of nitrogen, metal, and silicon within the range of maintaining the optical characteristics of the optical design using nitrogen, metal, and silicon as main components, and has achieved an improved resistance to high-temperature water of the optical semi-transmission film composed mainly of nitrogen, metal and silicon. COPYRIGHT: (C)2007,JPO&INPIT

Method for manufacturing phase shift mask blank and phase shift mask

PROBLEM TO BE SOLVED: To provide a producing method of photomask which can deal with requirement for a high accuracy and large sized photomask and which reduces influences on the global environment. SOLUTION: A reversal pattern 5a in a positive-negative reversal relation to the desired mask pattern as a finish product is formed on a substrate which is transparent with respect to desired exposure light (d). Then, a thin film 2 of a material to be formed into the desired mask pattern is deposited on the substrate with the reversal pattern (e). The thin film layer is removed to expose the reversal pattern 5a under the thin film layer (f). The reversal pattern 5a exposed is selectively removed to leave the mask pattern 2a (g). Thus, the photomask having the mask pattern 2a consisting of the desired material is produced.

Photomask and production of photomask

The halftone phase-shift mask has been in practical use for i-line and KrF lithography. In ArF lithography, the HtPSM is also considered to be a promising resolution enhancement technique for its simple structure and fabrication process required. We in HOYA have attempted to expand the applicability of our MoSi-based HtPSM blank technology to ArF lithography, helping extend the life of the existing infrastructure for conventional HtPSM fabrication. We have completed tuning our new MoSi-based film for ArF application. The film's optical properties, chemical durability and ArF laser irradiation durability meet industry requirements; and it is compatible with conventional mask-making process and repair techniques for the KrF HtPSM.

Megumi Takeuchi

Papers

Phase shift mask and phase shift mask blank

Lithography mask blank

Method for manufacturing phase shift mask blank and phase shift mask

Photomask and production of photomask

Development of halftone phase-shift blank and mask fabrication for ArF lithography