M
Meijie Tang
Researcher at Lawrence Livermore National Laboratory
Publications - 23
Citations - 1817
Meijie Tang is an academic researcher from Lawrence Livermore National Laboratory. The author has contributed to research in topics: Dislocation & Strain hardening exponent. The author has an hindex of 12, co-authored 23 publications receiving 1680 citations.
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Journal ArticleDOI
Enabling strain hardening simulations with dislocation dynamics
Athanasios Arsenlis,Wei Cai,Meijie Tang,Moono Rhee,Tomas Oppelstrup,Gregg Hommes,Tom G. Pierce,Vasily V. Bulatov +7 more
TL;DR: In this paper, numerical algorithms for discrete dislocation dynamics simulations are investigated for the purpose of enabling strain hardening simulations of singlecrystals on massively parallel computers, and the authors propose a deterministic algorithm for single-crystal simulations.
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Athermal mechanisms of size-dependent crystal flow gleaned from three-dimensional discrete dislocation simulations
Satish I. Rao,Dennis M. Dimiduk,Triplicane A. Parthasarathy,Michael D. Uchic,Meijie Tang,Christopher Woodward +5 more
TL;DR: In this paper, the authors used large-scale three-dimensional discrete dislocation simulations (DDS) to explicitly model the deformation behavior of micrometer-scale Ni microcrystals in the size range of 0.5-20μm.
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Dislocation multi-junctions and strain hardening
Vasily V. Bulatov,Luke L. Hsiung,Meijie Tang,Athanasios Arsenlis,M. C. Bartelt,Wei Cai,Wei Cai,J.N. Florando,Masato Hiratani,Moon Rhee,Gregg Hommes,Tim Pierce,Tomas Diaz de la Rubia +12 more
TL;DR: It is reported that interactions among three dislocations result in the formation of unusual elements of dislocation network topology, termed ‘multi-junctions’, which are responsible for the strong orientation dependence of strain hardening in body-centred cubic crystals.
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Intrinsic point defects in crystalline silicon: Tight-binding molecular dynamics studiesof self-diffusion, interstitial-vacancy recombination, and formation volumes
TL;DR: In this article, tight-binding molecular dynamics simulations are performed to study self-diffusion, interstitial-vacancy recombination, and formation volumes of point defects in crystalline silicon.
Journal ArticleDOI
Dislocation mobility and the mechanical response of b.c.c. single crystals: A mesoscopic approach
TL;DR: In this article, a mesoscopic simulation of dislocations and plasticity in b.c. crystals at low temperatures is developed and applied to the case of Ta, where the thermally activated nucleation of double kinks is taken as controlling the mobility of screw dislocation.