M
Michael D. Welch
Researcher at Applied Materials
Publications - 30
Citations - 1616
Michael D. Welch is an academic researcher from Applied Materials. The author has contributed to research in topics: Etching (microfabrication) & Isotropic etching. The author has an hindex of 22, co-authored 30 publications receiving 1616 citations.
Papers
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Patent
Method for etching dielectric layers with high selectivity and low microloading
TL;DR: In this paper, a method of etching a dielectric layer on a substrate with high etching selectivity, low etch rate microloading, and high etch rates is described.
Patent
Adjusting DC bias voltage in plasma chamber
Hong Ching Shan,Evans Lee,Michael D. Welch,Robert W. Wu,Bryan Pu,Paul E. Luscher,James D. Carducci,Richard Blume +7 more
TL;DR: In this paper, a dielectric shield is positioned between the plasma and a selected portion of the electrically grounded components of the chamber, such as the chamber wall, to prevent the plasma from reaching the exhaust pump.
Patent
Dielectric etch chamber with expanded process window
James D. Carducci,Hamid Noorbakhsh,Evans Lee,Bryan Pu,Hongching Shan,Claes H. Bjorkman,Siamak Salimian,Paul E. Luscher,Michael D. Welch +8 more
TL;DR: A capacitively coupled reactor for plasma etch processing of substrates at sub-mospheric pressures is described in this paper, where a chamber body defining a processing volume, a lid provided upon the chamber body, the lid being a first electrode, substrate support provided in the processing volume and comprising a second electrode, a radio frequency source coupled at least to one of the first and second electrodes, and an evacuation pump system having pumping capacity of at least 1600 liters/minute The greater pumping capacity controls residency time of the process gases so as to regulate the degree of dissociation into
Patent
High selectivity etch using an external plasma discharge
TL;DR: In this paper, an apparatus and method for scavenging etchant species from a plasma formed of etchant gas prior to the etchant gases entering a primary processing chamber of a plasma reactor is described.
Patent
Shield or ring surrounding semiconductor workpiece in plasma chamber
TL;DR: A ring or collar surrounding a semiconductor workpiece in a plasma chamber was proposed in this paper, where the workpiece is surrounded by a dielectric shield, and the shield is covered by a non-dielectric ring which protects the dielectrics shield from reaction with, or erosion by, the process gases.