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Michael J. Leeson

Researcher at Intel

Publications -  47
Citations -  777

Michael J. Leeson is an academic researcher from Intel. The author has contributed to research in topics: Extreme ultraviolet lithography & Resist. The author has an hindex of 16, co-authored 47 publications receiving 720 citations. Previous affiliations of Michael J. Leeson include Katholieke Universiteit Leuven.

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Acid distribution in chemically amplified extreme ultraviolet resist

TL;DR: In this paper, the authors simulated acid generation induced by EUV photons in poly(4-hydroxystyrene) with 10wt% triphenylsulfonium triflate and clarified the extent of resolution blur in latent acid images and theoretical acid generation efficiency.
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Polymer-Structure Dependence of Acid Generation in Chemically Amplified Extreme Ultraviolet Resists

TL;DR: In this article, the relative dependence of acid yield generated in polystyrene derivatives on the exposure to extreme-ultraviolet (EUV) was evaluated and the dependence was similar to that of EB resists.
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High transmission pellicles for extreme ultraviolet lithography reticle protection

TL;DR: In this article, the authors present the results of a full-field extreme ultraviolet (EUV) pellicle for reticle protection and defect mitigation, which comprises a 50 nm Si membrane attached to a wire-grid.
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Chain scission resists for extreme ultraviolet lithography based on high performance polysulfone-containing polymers

TL;DR: In this paper, a series of polymers with a comb architecture were prepared where the poly(olefin sulfone) backbone was designed to be highly sensitive to extreme ultraviolet (EUV) radiation, while the well-defined poly(methyl methacrylate) (PMMA) arms were incorporated with the aim of increasing structural stability.
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Patterning of tailored polycarbonate based non-chemically amplified resists using extreme ultraviolet lithography

TL;DR: A series of high-performance polycarbonates have been prepared with glass-transition temperatures and decomposition temperatures that are tunable by varying the repeat-unit chemical structure to achieve patterning and the importance of resist-developer interactions for maximizing image quality has been demonstrated.