Showing papers by "Mika Valden published in 2021"

Performance and characterization of the FinEstBeAMS beamline at the MAX IV Laboratory

Abstract: FinEstBeAMS (Finnish-Estonian Beamline for Atmospheric and Materials Sciences) is a multidisciplinary beamline constructed at the 1.5 GeV storage ring of the MAX IV synchrotron facility in Lund, Sweden. The beamline covers an extremely wide photon energy range, 4.5-1300 eV, by utilizing a single elliptically polarizing undulator as a radiation source and a single grazing-incidence plane grating monochromator to disperse the radiation. At photon energies below 70 eV the beamline operation relies on the use of optical and thin-film filters to remove higher-order components from the monochromated radiation. This paper discusses the performance of the beamline, examining such characteristics as the quality of the gratings, photon energy calibration, photon energy resolution, available photon flux, polarization quality and focal spot size. (Less)

Manganese Doping Promotes the Synthesis of Bismuth-based Perovskite Nanocrystals While Tuning Their Band Structures.

Abstract: The doping of halide perovskite nanocrystals (NCs) with manganese cations (Mn2+ ) has recently enabled enhanced stability, novel optical properties, and modulated charge carrier dynamics of the NCs host. However, the influence of Mn doping on the synthetic routes and the band structures of the host has not yet been elucidated. Herein, it is demonstrated that Mn doping promotes a facile, safe, and low-hazard path toward the synthesis of ternary Cs3 Bi2 I9 NCs by effectively inhibiting the impurity phase (i.e., CsI) resulting from the decomposition of the intermediate Cs3 BiI6 product. Furthermore, it is observed that the deepening of the valence band level of the host NCs upon doping at Mn concentration levels varying from 0 to 18.5% (atomic ratio) with respect to the Bi content. As a result, the corresponding Mn-doped NCs solar cells show a higher open-circuit voltage and longer electron lifetime than those employing the undoped perovskite NCs. This work opens new insights on the role of Mn doping in the synthetic route and optoelectronic properties of lead-free halide perovskite NCs for still unexplored applications.

GaAs surface passivation for InAs/GaAs quantum dot based nanophotonic devices

Abstract: Several passivation techniques are developed and compared in terms of their ability to preserve the optical properties of close-to-surface InAs/GaAs quantum dots (QDs). In particular, the influence of N-passivation by hydrazine chemical treatment, N-passivation by hydrazine followed by atomic layer deposition (ALD) of AlO x and use of AlN x deposited by plasma-enhanced ALD are reported. The effectiveness of the passivation is benchmarked by measuring the emission linewidths and decay rates of photo-carriers for the near-surface QDs. All three passivation mechanisms resulted in reducing the oxidation of Ga and As atoms at the GaAs surface and consequently in enhancing the room-temperature photoluminescence (PL) intensity. However, long-term stability of the passivation effect is exhibited only by the hydrazine + AlO x process and more significantly by the AlN x method. Moreover, in contrast to the results obtained from hydrazine-based methods, the AlN x passivation strongly reduces the spectral diffusion of the QD exciton lines caused by charge fluctuations at the GaAs surface. The AlN x passivation is found to reduce the surface recombination velocity by three orders of magnitude (corresponding to an increase of room-temperature PL signal by ∼1030 times). The reduction of surface recombination velocity is demonstrated on surface-sensitive GaAs (100) and the passivating effect is stable for more than one year. This effective method of passivation, coupled with its stability in time, is extremely promising for practical device applications such as quantum light sources based on InAs/GaAs QDs positioned in small-volume photonic cavities and hence in the proximity of GaAs-air interface.

Interface Engineering of TiO2 Photoelectrode Coatings Grown by Atomic Layer Deposition on Silicon.

Abstract: Titanium dioxide (TiO2) can protect photoelectrochemical (PEC) devices from corrosion, but the fabrication of high-quality TiO2 coatings providing long-term stability has remained challenging. Here, we compare the influence of Si wafer cleaning and postdeposition annealing temperature on the performance of TiO2/n+-Si photoanodes grown by atomic layer deposition (ALD) using tetrakis(dimethylamido)titanium (TDMAT) and H2O as precursors at a growth temperature of 100 °C. We show that removal of native Si oxide before ALD does not improve the TiO2 coating performance under alkaline PEC water splitting conditions if excessive postdeposition annealing is needed to induce crystallization. The as-deposited TiO2 coatings were amorphous and subject to photocorrosion. However, the TiO2 coatings were found to be stable over a time period of 10 h after heat treatment at 400 °C that induced crystallization of amorphous TiO2 into anatase TiO2. No interfacial Si oxide formed during the ALD growth, but during the heat treatment, the thickness of interfacial Si oxide increased to 1.8 nm for all of the samples. Increasing the ALD growth temperature to 150 °C enabled crystallization at 300 °C, which resulted in reduced growth of interfacial Si oxide followed by a 70 mV improvement in the photocurrent onset potential.

Visible to near-infrared broadband fluorescence from Ce-doped silica fiber

Abstract: We investigate the fluorescence characteristics of a purely Ce-doped silica fiber and demonstrate broad-bandwidth fluorescence across the visible and near-infrared. The Ce-doped fiber is fabricated using standard modified chemical vapor deposition technology. Trace metal analysis by inductively coupled plasma mass spectrometry confirmed the purity of Ce-doping. The Ce valence state of 3+ was revealed by X-ray photoelectron spectroscopy. The optimum pump wavelength for the broadest luminescence from a fiber is scanned between 405 nm to 440 nm wavelength of diode lasers operating under continuous-wave regime. The strongest pump absorption is observed at the wavelength of 405 nm. Variation of pump power and fiber length results in the demonstration of broad-bandwidth fluorescence with spectral widths up to 301 nm (at -10 dB). The measured fluorescence spectra cover the wavelength range from ∼458 nm to ∼819 nm with spectral power densities of up to 2.4 nW/nm.