19세기말 애국적 담론과 新小說의 정체성

A tunable active inductor is presented where the novel topology enables both the inductance and series resistance to be varied. With a discrete MMIC realization of this active inductor, Q-factors in excess of 15 000 have been measured over a wide range of inductance values. Applications for these active inductors include high-performance narrow-band filters, voltage controlled oscillators, and analog phase shifters. Analytical equations for the novel active inductor and a 3-resonator filter are given. The measured performance for a monolithic 2 GHz filter achieves a mean insertion loss of 0.9 dB, passband ripple of ±0.7 dB, with a 3 dB bandwidth of 70 MHz, and an excellent out-of-band rejection which exceeds 50 dB up to 18 GHz

Monolithic narrow-band filter using ultrahigh-Q tunable active inductors

The various architectures of transceivers for current standards are firstly compared. Different possibilities to achieve multi-standard transceivers are also recalled and compared. We demonstrate that ease of realization and flexibility evolve in opposite directions. The advantages and drawbacks of reconfigurable active filters are indicated. We demonstrate that the second generation current controlled conveyor operating in current mode is perfectly suitable for the realization of frequency-agile filters. After a brief recall of the essential points of agile filters, a second order frequency agile bandpass filter operating in current mode is implemented with CCCII+. It has four central frequencies whose values could be selected digitally. The validation results show that its tuning ratio n = f 0max /f 0min is equal to 5.1 with f 0max = 1.22GHz.

Multistandard transceivers: State of the art and a new versatile implementation for fully active frequency agile filters

Several communication techniques are investigated in the first part of this paper: software radio, cognitive radio and encrypted communications. State of the art of research on agile and reconfigurable filters, passive as well as active, necessary for transceivers is then made and various tables for comparison are given. In the third part, a new theory for a 2nd-order frequency-agile filter is introduced. The center frequency of the filter is proportional to the gain of a feedback amplifier and thus can be tuned over a wide frequency range. This new theory is thereafter generalized to the nth-class leading to a center frequency proportional to (A)n/2. Simulation results of band pass agile filters in current mode and made from second-generation current controlled conveyors (CCCII+) in 0.25 m m SiGe BiCMOS technology are given for n = 1 and n = 2. These simulation results along with results of measurements carried out on the fabricated filters entirely confirm the new approach. They also highlight the improvements to be expected for cognitive and encrypted communications.

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Cognitive and encrypted communications: state of the art and a new approach for frequency-agile filters

In this letter, the experimental proofs of two microwave active inductors with very high quality factor, namely Differential Boot-Strapped Inductor (D-BSI) and Cross-Coupled Differential Boot-Strapped Inductor (CCD-BSI), are presented. These circuits can be effectively implemented in modern RF-CMOS processes for high-Q equivalent integrated inductors at high frequency. The cases of study at 13 GHz have been designed and implemented in a modern standard 90 nm bulk CMOS process. The measurements on the test-chips show an equivalent inductance close to 3.2 nH with an associated quality factor up to 400 and a wide linearity range.

Microwave Active Inductors

A 2nd order RF bandpass filter with Q-enhancement active inductor is presented. In the filter, a design technique for a tunable Q-enhancement CMOS active inductor operating in the wide RF-band is described. Moreover, issues related to noise and stability of the active inductor is addressed. Simulated performance presented shows that the filter has about 50.6dB spurious free dynamic range (SFDR) at 2.45GHz with Q/spl ap/30, and the center frequency of the filter using a 0.25-/spl mu/m CMOS process can be operated at the 1.60G-2.45GHz frequency band under a 1.8V power supply. The filter is suited for multi-band wireless applications.

A CMOS bandpass filter with wide-tuning range for wireless applications

This paper presents a 6th order RF bandpass filter using low-voltage based on active inductor. In the filter, a design technique for a high-Q CMOS active inductor operating in the RF-band is described. Simulated performance presented is shown that the center frequency of filter using a 0.25-mum CMOS process can be operated at the 2.05-2.45 GHz frequency band under a 1.8V power supply and suitable for multiband wireless applications and RF system on-chip

A CMOS RF bandpass filter based on the active inductor

This paper discusses the effect of substrate biasing on equivalent input referred voltage noise E/sub n/, and presents a low noise operational amplifier design with current driving bulk technology. The operational amplifier with reversed substrate biasing by current driving bulk technology is realized in TSMC 0.25/spl mu/m CMOS process, and achieves better noise performance. Simulated performance is that the operational amplifier can obtain equivalent input referred voltage noise E/sub n/ = 2.91 /sub /spl mu/V//spl radic/Hz/ @ 1 Hz, E/sub n/ = 3.38 /sub /spl mu/V//spl radic/Hz/ @ 1 MHz GBW product 280.5 MHz, DC gain 16dB, total harmonic distortion (THD) -76dB@50kHz. Power consumption is 2.35mW under a 2.5V power supply.

Low noise operational amplifier design with current driving bulk in 0.25/spl mu/m CMOS technology

This paper presents a novel on-chip DC-DC voltage down converter (VDC): a temperature-independence reference voltage generator and a voltage-up converter. The architecture of the proposed VDC is simple, and can be fabricated by conventional CMOS technology. For 5 V to 3.3 V conversions, it provides an output voltage insusceptible to external supply-voltage bouncing, temperature variation, and load current variation. A temperature dependency of only 0.65 mV//spl deg/C and a voltage deviation within /spl plusmn/0.16% for /spl plusmn/10% variation of external supply voltage are achieved. The voltage is stabilized with /spl plusmn/17 mV for load current varying from 0 to 100 mA.

On-chip DC-DC voltage down converter for low-power IC chip

In this paper, we propose a novel process-variation robust current-mode signaling scheme for on-chip interconnects. By using special bias generation circuits in the driver, the current-mode signaling system is robust in the presence of process induced parameter variations and uncertainties. Different process corners and Monte Carlo simulation analyses are carried out using Hspice in Chartered Semiconductor 0.18 micrometer process. The process corner simulation analyses show that the average power and system delay don't change much in different process corner, especially in typical, FS and SF corner. Monte Carlo analyses show that the average delay and power of the interconnect signaling system are normally distributed for a 10mm wire in 180 nm process technology.

Mingyan Yu

Papers

A CMOS bandpass filter with wide-tuning range for wireless applications

A CMOS RF bandpass filter based on the active inductor

Low noise operational amplifier design with current driving bulk in 0.25/spl mu/m CMOS technology

On-chip DC-DC voltage down converter for low-power IC chip

Robust current-mode on-chip interconnect signaling scheme in deep submicron