Before the diffraction from a diffracting structure on a semiconductor wafer is measured, where necessary, the film thickness and index of refraction of the films underneath the structure are first measured using spectroscopic reflectometry or spectroscopic ellipsometry. A rigorous model is then used to calculate intensity or ellipsometric signatures of the diffracting structure. The diffracting structure is then measured using a spectroscopic scatterometer using polarized and broadband radiation to obtain an intensity or ellipsometric signature of the diffracting structure. Such signature is then matched with the signatures in the database to determine the grating shape parameters of the structure.

Spectroscopic scatterometer system

An apparatus (20) for measuring the thickness of a thin film layer (32) on substrate (28) includes a probe beam of radiation (24) focused substantially normal to the surface of the sample using a high numerical aperture lens (30). The high numerical aperture lens (30) provides a large spread of angles of incidence of the rays within the incident focused beam. A detector (50) measures the intensity across the reflected probe beam as a function of the angle of incidence with respect to the surface of the substrate (28) of various rays within the focused incident probe beam. A processor (52) functions to derive the thickness of the thin film layer based on these angular dependent intensity measurements. This result is achieved by using the angular dependent intensity measurements to solve the layer thickness using variations of the Fresnel equations. The invention is particularly suitable for measuring thin films, such as oxide layers, on silicon semiconductor samples.

Method and apparatus for measuring thickness of thin films

A plasma processing apparatus wherein a layer structure consisting of plural layers formed in stack one upon another on a semiconductor wafer placed on the sample holder located in the process chamber, is etched with plasma generated in the process chamber by supplying high frequency power to the electrode disposed in the sample holder, the apparatus comprising a ring-shaped electrode disposed above the electrode and around the periphery of the top portion of the sample holder, an outer circumferential ring of dielectric material disposed above the ring-shaped electrode and opposite to the plasma, and a power source for supplying power at different values to the ring-shaped electrode depending on the sorts of layers of the layer structure.

Plasma Processing Apparatus

Apparatus and a method for performing high resolution optical imaging in the near infrared of internal features of semiconductor wafers uses an optical device made from a material having a high index of refraction and held in very close proximity to the wafer. The optical device may either be a prism or a plano-convex lens. The plano-convex lens may be held in contact with the wafer or separated from the wafer via an air bearing or an optical coupling fluid to allow the sample to be navigated beneath the lens. The lens may be used in a number of optical instruments such as a bright field microscope, a Schlieren microscope, a dark field microscope, a Linnik interferometer, a Raman spectroscope and an absorption spectroscope.

Apparatus and a method for high numerical aperture microscopic examination of materials

Methods and apparatus are disclosed for detecting a thickness of a surficial layer (e.g., metal or insulating layer) on a workpiece (e.g., semiconductor wafer) during a process for planarizing the layer, so as to stop the process when a suitable process endpoint is reached. Layer thickness is detected based on a spectral-characteristic signal of reflected or transmitted signal light, obtained by directing a probe light onto the surface of the workpiece. Example spectral characteristics are local maxima and minima of signal-light waveform, differences or quotients of the same, a dispersion of the signal-light waveform, a component of a Fourier transform of the signal waveform, a cross-correlation function of the signal waveform. Alternatively, the zeroth order of signal light is selected for measurement, or a spatial coherence length of the probe light is compared with the degree of fineness of the pattern on the surface illuminated with the probe light. An optical model can be determined based on the comparison, and at least one of the layer thickness and the process endpoint is detected by comparing the measured signal-light intensity with the calculated theoretical signal light intensity.

Layer-thickness detection methods and apparatus for wafers and the like, and polishing apparatus comprising same

The invention is directed to a dry-etching apparatus used for etching an aluminum wiring film formed on a wafer, and more particularly to a dry-etching apparatus which can remove chlorides deposited on the surface of the wafer during the dry etching thereof, as well as an etching resist film, without having to take the wafer out. This dry-etching apparatus is provided with an etching chamber, a vacuum antechamber attached to the etching chamber by a gate valve, and a post-treatment chamber attached to the vacuum antechamber. The apparatus is so formed that etched wafers removed to the vacuum antechamber can be sent therefrom to the post-treatment chamber, and then the post-treated wafers can be removed to the vacuum antechamber again, and then removed therefrom to the atmosphere.

Dry etching apparatus

An apparatus for measuring in a non-contact manner the depth of pits and grooves formed by etching in periodic patterns on the surface of a substrate. The measurement is based on the detection of the intensity of a diffraction ray excluding that of the 0th order through the irradiation of a light beam with variable wave length to the sample. Whereas, the conventional measuring system is sensitive to a diffraction ray of the 0th order, i.e., the major component of the reflected light, that hampers the detection of a higher order diffraction ray carrying information of the depth.

Apparatus for measuring the depth of fine engraved patterns

An apparatus for measuring a difference in level in a sample comprises a light source section which provides illumination light of a variable-wavelength. The illumination light is irradiated onto the sample. A group of filters is provided for shielding diffraction light rays of O-order or other than O-order of the light reflected from the sample. The intensity of interference light of the light rays not shielded by the filter group is detected by a light detector which in turn converts it into an electric signal. An arithmetic operation unit receives the electric signal while the wavelength of the illumination light from the light source section is continuously varied. In the arithmetic unit, wavelengths at which the electric signal or detected light intensity takes extreme values are determined, and the level difference in the sample is determined on the basis of those wavelengths.

Apparatus for measuring difference in shallow level

An apparatus .Iadd.and method .Iaddend.for measuring in a non-contact manner the depth of pits and grooves formed by etching in periodic patterns on the surface of a substrate. The measurement is based on the detection of the intensity of a diffraction ray excluding that of the 0th order through the irradiation of a light beam with variable wave length to the sample. Whereas, the conventional measuring system is sensitive to a diffraction ray of the 0th order, i.e., the major component of the reflected light, that hampers the detection of a higher order diffraction ray carrying information of the depth.

Minori Noguchi

Papers

Dry etching apparatus

Apparatus for measuring the depth of fine engraved patterns

Apparatus for measuring difference in shallow level

Apparatus and method for measuring the depth of fine engraved patterns