Patent
Dry etching apparatus
TLDR
In this article, a dry-etching method was proposed for removing chlorides deposited on the surface of the wafer during the dry etching of a wafer, as well as an etching resist film.Abstract:
The invention is directed to a dry-etching apparatus used for etching an aluminum wiring film formed on a wafer, and more particularly to a dry-etching apparatus which can remove chlorides deposited on the surface of the wafer during the dry etching thereof, as well as an etching resist film, without having to take the wafer out. This dry-etching apparatus is provided with an etching chamber, a vacuum antechamber attached to the etching chamber by a gate valve, and a post-treatment chamber attached to the vacuum antechamber. The apparatus is so formed that etched wafers removed to the vacuum antechamber can be sent therefrom to the post-treatment chamber, and then the post-treated wafers can be removed to the vacuum antechamber again, and then removed therefrom to the atmosphere.read more
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Patent
Plasma Processing Apparatus
TL;DR: In this paper, a plasmas processing apparatus consisting of plural layers formed in stack one upon another on a semiconductor wafer placed on the sample holder located in the process chamber is etched with plasma generated by supplying high frequency power to the electrode disposed in a sample holder, and a power source for supplying power at different values to the ring-shaped electrode depending on the sorts of layers of the layer structure.
Patent
Apparatus for producing semiconductor devices
Shigeki Hazano,Masahiro Shibagaki,Hidetaka Jyo,Reiichiro Sensui,Munenori Iwami,Noboru Suzuki +5 more
TL;DR: In this paper, an apparatus for producing semiconductor devices in which a plurality of treatment chambers such as a load chamber, an etching chamber, a sputtering chamber, ion implantation chamber, CVD chamber, unload chamber, transfer chamber, heat-treatment chamber, rinsing chamber and the like, are connected in series preferably in the form of U for effecting various treatments of semiconductor wafers.
Patent
Vacuum processing system
Cecil J. Davis,Timothy A. Wooldridge,Duane E. Carter,John E. Spencer,Robert T. Matthews,Randall C. Hildenbrand +5 more
TL;DR: In this article, a vacuum-tight wafer carrier, which contains numerous wafers in vacuum in a sealed box, is placed into a platform inside a vacuum load lock.
Patent
Method and apparatus for processing samples
Masayuki Kojima,Yoshimi Torii,Michimasa Hunabashi,Kazuyuki Suko,Takashi Yamada,Keizo Kuroiwa,Kazuo Nojiri,Yoshinao Kawasaki,Yoshiaki Sato,Ryooji Fukuyama,Hironobu Kawahara +10 more
TL;DR: In this article, a plurality of wet-processing treatments of a sample can be performed, and the samples can either be passed in series through the plurality of dry-processing stations, or can be processed in parallel through the wetprocessing stations.
Patent
Semiconductor wafer transfer in processing systems
TL;DR: An improved semiconductor wafer transfer method and system incorporates a combination of wafer retractor (14) and wafer lifters (16) built into each processing chamber with a modified transport arm (12) to achieve large enhancements in wafer exchange speeds.
References
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Patent
Magnetron cathode sputtering apparatus.
TL;DR: A rotatable magnetron cathode sputtering apparatus for operation within an evacuable chamber for coating substrates that are also contained within said chamber is described in this paper, where the cathode comprises an elongated cylindrical tube having a layer of the coating material or materials to be sputtered applied to the outer surface thereof.
Patent
Continuous sputtering apparatus and method
TL;DR: An R.F. sputtering apparatus is a flexible continuous substrate that is suitable conditioned in a conditioning vessel, then passed through a sputtering vessel between spaced electrode pairs as discussed by the authors, where each pair consists of a target (cathode) and an anode.
Patent
Dry etching method and device thereof
TL;DR: In this article, the surface potential of the electrode is measured and a desired voltage waveform is impressed on the above-mentioned electrode under the measured data using a contol voltage generator.
Patent
Plasma etching apparatus and etching method
TL;DR: In this paper, the authors proposed a partitioning of a main etching chamber, a post-treatment chamber, and a cassette chamber via partition valves in vacuum state, to prevent an element to be etched from being corroded.
Patent
Sputtering apparatus comprising control means for preventing impurity gases from entering a sputtering chamber
TL;DR: In this paper, a gate valve interposed between the chambers is opened with the pressure in the preliminary chamber is reduced lower than that in the main chamber after completion of the preliminary processing.
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