M
Mishel Matloubian
Researcher at Texas Instruments
Publications - 18
Citations - 644
Mishel Matloubian is an academic researcher from Texas Instruments. The author has contributed to research in topics: Threshold voltage & Transistor. The author has an hindex of 12, co-authored 18 publications receiving 640 citations.
Papers
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Journal ArticleDOI
Single-transistor latch in SOI MOSFETs
TL;DR: In this paper, a single-transistor latch phenomenon observed in silicon-on-insulator (SOI) MOSFETs is reported, which occurs at high drain biases.
Patent
Sidewall channel stop process
TL;DR: In this paper, a mesa etch is performed to isolate the individual active device regions and a filament is formed on the walls of the masking material 24 which covers the predetermined locations of the active devices regions 32.
Patent
Silicon-on insulator transistor with internal body node to source node connection
TL;DR: In this paper, a transistor and a method of making a transistor are disclosed, where a tunnel diode is formed to make connection between the source of the transistor and the body node underlying the gate.
Patent
Thin oxide sidewall insulators for silicon-over-insulator transistors
TL;DR: In this article, a silicon-over-insulator transistor is provided having a semiconductor mesa (40) overlying a buried oxide (42), and an oxidizable layer (56) is formed over the mesa's insulating region.
Journal ArticleDOI
Modeling of the subthreshold characteristics of SOI MOSFETs with floating body
TL;DR: In this article, a simple device model is presented that explains the observed characteristics to be due to MOS back-bias effects resulting from the positively charged floating body, and the improvement in the sub-threshold slope is the outcome of positive feedback between the body potential and the transistor channel current.