PROBLEM TO BE SOLVED: To obtain a compsn. which can form a good pattern and especially has high adhesion property to a substrate and which can easily be removed not by peeling with a peeling liquid but by dissolution peeling method, by incorporating at least an alkali-soluble resin having a specified compd. as one component of the monomers. SOLUTION: This radiation-sensitive resin compsn. contains an alkali-soluble resin (aniline-modified resin) having a compd. expressed by the formula as one component of the monomers. In the formula, R is a hydroxy group or 1-4C alkyl group, n is 0 or an integer from 1 to 3, and when n is 2 or 3, each R may be same or different. The aniline-modified resin used is usually produced by mixing 0.1 to 60 pts.wt. of the compd. expressed by the formula, 10 to 20 pts.wt. of aldehyde and 1 to 3 pts.wt. of oxalic acid to 100 pts.wt. of phenols and reacting at 85 to 95°C reaction temp. for at least 4 hours. COPYRIGHT: (C)2000,JPO

Radiation-sensitive resin composition

Process gas discharged from a bypass pipe to a gas exhaust system can be prevented from diffusing back to the inside of a process chamber without having to install a dedicated vacuum pump at the downstream side of the bypass pipe. The substrate processing apparatus includes a process chamber accommodating a substrate, a gas supply system supplying process gas from a process gas source to the process chamber for processing the substrate, a gas exhaust system configured to exhaust the process chamber, two or more vacuum pumps installed in series at the gas exhaust system, and a bypass pipe connected between the gas supply system and the gas exhaust system. The most upstream one of the vacuum pumps is a mechanical booster pump, and the bypass pipe is connected between the mechanical booster pump and the rest vacuum pumps located at a downstream side of the mechanical booster pump.

Substrate Processing Apparatus

A positive resist composition comprising: at least one compound selected from a compound capable of generating an acid represented by the formula (I) as defined herein upon irradiation with actinic rays or radiation and a compound capable of generating an acid represented by the following formula (II) upon irradiation with actinic rays or radiation; and a compound capable of generating an acid represented by the formula (III) as defined herein upon irradiation with actinic rays or radiation.

Positive resist composition and pattern-forming method using the same

A radiation sensitive resin composition comprising (A) a fluorine-containing copolymer of hexafluoropropylene, at least one compound selected from the group consisting of unsaturated carboxylic acids and unsaturated carboxylic anhydrides, and an unsaturated compound (B) an acid generating compound which generates an acid upon exposure to radiation; (C) a cross-linkable compound; and (D) an organic solvent. The composition suitable is useful for a negative resist for forming a mask for the production of a circuit such as a semiconductor integrated circuit or a thin film transistor circuit for liquid crystal displays as well as a material for forming a permanent film such as an interlaminar insulating film or a color filter protective film.

A lithographic apparatus configured to project a patterned beam of radiation onto a target portion of a substrate is disclosed. The apparatus includes a first radiation dose detector and a second radiation dose detector, each detector comprising a secondary electron emission surface configured to receive a radiation flux and to emit secondary electrons due to the receipt of the radiation flux, the first radiation dose detector located upstream with respect to the second radiation dose detector viewed with respect to a direction of radiation transmission, and a meter, connected to each detector, to detect a current or voltage resulting from the secondary electron emission from the respective electron emission surface.

Lithographic apparatus, and device manufacturing method

PROBLEM TO BE SOLVED: To prevent fine resist patterns from falling in a drying process after development processing in forming the resist patterns. SOLUTION: The positive type resist composition is used in a resist pattern forming method including a process of substituting the liquid existing on a substrate after alkaline development with a liquid for critical drying, then drying the liquid for critical drying through a critical state. The composition contains a resin component (A) which is ≤20mol% in the content of alkaline solubility, has an acid dissociative dissolution suppressing group and is increased in the alkaline solubility by the effect of an acid, an acid forming agent component (B) which generates an acid by exposure and an organic solvent (C) which dissolves the components (A) and (B). The component (A) has (a1) a constitutional unit including the acid dissociative dissolution suppressing group, (a2) a constitutional unit including a lactone unit, and (a3) a constitutional unit including an alcoholic hydroxyl group-containing polycyclic group. COPYRIGHT: (C)2004,JPO&NCIPI

Positive type resist composition

The proton dynamics of poly(4-hydroxystyrene) (PHS) films were investigated using Coumarin 6 (C6). The acid density was 0.022 nm-3 at the exposure dose of 10 µC cm-2 (75 keV electron beam). The absorption intensity of C6 proton adducts was saturated at a certain concentration of C6, indicating an almost complete addition of protons at this C6 concentration. Protons can move in PHS films near C6 molecules even at room temperature. Also, the absorbed dose was estimated using 60Co γ-rays. The acid yield can be well explained by an acid generation model involving the ionization of a base polymer.

https://iopscience.iop.org/article/10.1143/JJAP.43.L848/pdf

Proton Dynamics in Chemically Amplified Electron Beam Resists

An immersion exposure process-use resist protection film forming material formed on a resist film, the material having characteristics of being transparent to an exposure light, having practically no miscibility with an immersion exposure-use liquid and causing no mixing with the resist film; a protection film formed by this material; a composite film having the resist film; and a resist pattern forming method using them. These can prevent the degeneration of a resist film during immersion exposing and the degeneration of a liquid being used at the same time, and can form a high-resolution resist pattern using immersion exposing.

Immersion exposure process-use resist protection film forming material, composite film, and resist pattern forming method

In chemically amplified resists for ionizing radiation such as an electron beam and EUV, protons of acids are mainly generated by the deprotonation of base polymers. Therefore, the acid generation efficiency depends highly on polymer structure. In recent resist formulas, partially protected poly(4-hydroxystyrene) has often been used as a base polymer. In this work, the effects of protecting groups on acid generation were investigated. We found differences in acid generation efficiency caused by protecting groups. These differences are likely to affect acid distribution.

Potential Cause of Inhomogeneous Acid Distribution in Chemically Amplified Resists for Post Optical Lithography

PROBLEM TO BE SOLVED: To obtain a resist compsn. having high heat resistance and high resolution, almost independent of stationary waves and giving a resist pattern of a superior shape by incorporating a specified alkali-soluble resin and an acid generating agent made of a specified oxime sulfonate compd. SOLUTION: This resist compsn. is a positive or negative type chemical amplification type resist compsn. The positive type resist compsn. contains an alkali-soluble resin having hydroxyl groups protected with acid-dissociable substituents and an acid generating agent made of an oxime sulfonate compd. represented by the formula. The ratio (Mw/Mn) of the wt. average mol.wt. of the alkali-soluble resin to the number average mol.wt. is ≤3.5. The negative type resist compsn. contains an alkali-soluble resin, an acid generating agent made of an oxime sulfonate compd. represented by the formula and an acid- crosslinkable substance. The ratio (Mw/Mn) of the wt. average mol.wt. of the alkali-soluble resin to the number average mol.wt. is ≤3.5. In the formula, R 1 is an arom. group and R 2 is a lower alkyl or a halogenated lower alkyl. COPYRIGHT: (C)1997,JPO

Mitsuru Sato

Papers

Positive type resist composition

Proton Dynamics in Chemically Amplified Electron Beam Resists

Immersion exposure process-use resist protection film forming material, composite film, and resist pattern forming method

Potential Cause of Inhomogeneous Acid Distribution in Chemically Amplified Resists for Post Optical Lithography

Chemical amplification type resist composition and acid generating agent used for the same