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Immersion exposure process-use resist protection film forming material, composite film, and resist pattern forming method

TLDR
An immersion exposure process-use resist protection film forming material formed on a resist film, the material having characteristics of being transparent to an exposure light, having practically no miscibility with an immersion exposure-use liquid and causing no mixing with the resist film as discussed by the authors.
Abstract
An immersion exposure process-use resist protection film forming material formed on a resist film, the material having characteristics of being transparent to an exposure light, having practically no miscibility with an immersion exposure-use liquid and causing no mixing with the resist film; a protection film formed by this material; a composite film having the resist film; and a resist pattern forming method using them. These can prevent the degeneration of a resist film during immersion exposing and the degeneration of a liquid being used at the same time, and can form a high-resolution resist pattern using immersion exposing.

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Citations
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Substrate Processing Apparatus

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TL;DR: In this article, a lithographic apparatus configured to project a patterned beam of radiation onto a target portion of a substrate is described, which includes a first radiation dose detector and a second radiation dose detectors, each detector comprising a secondary electron emission surface configured to receive a radiation flux and to emit secondary electrons due to the receipt of the radiation flux.
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Pattern formation method

TL;DR: In this article, a resist pattern is formed by selectively irradiating the resist film with exposing light while supplying water onto the resist pattern, and the pattern is developed so as to form resist pattern.
References
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Patent

Projection exposure method and system

TL;DR: In this paper, a projection exposure method capable of keeping a liquid (7) filled between a projection optical system (PL) and a wafer (W) even while the wafer is being moved when a liquid immersion method is used to conduct an exposure, wherein a discharge nozzle (21a) and inflow nozzles (23a, 23b) are disposed so as to hold a lens (4) at the tip end of the projection optical systems (PL), in an X direction.
Journal ArticleDOI

Immersion lithography at 157 nm

TL;DR: In this article, the feasibility of immersion lithography at 157 nm for patterning below 70 nm was investigated and it was shown that this technology can enable an enhancement in resolution of ∼40% without radical changes in lasers, optics, or resist technology.
Patent

Device manufacturing method and a substrate

TL;DR: In this article, a method of reducing the effect of bubbles on the imaging quality of an immersion lithography apparatus was proposed, in which a top coating was applied to a substrate to keep bubbles away from a radiation sensitive layer of the substrate.
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Photosensitive element comprising photopolymerizable layer and protective layer

TL;DR: In this paper, the authors describe a photo-sensitive element comprising of a support, a lid, and a layer of photo-ensitive materials, having a thickness of about 0.5 to 20 micrometers.
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Process of imaging a deep ultraviolet photoresist with a top coating and materials thereof

TL;DR: In this paper, a process for imaging a photoresist with a (top) barrier coat to prevent contamination of the photoresists from environmental contaminants is described, and a barrier coating composition comprising a polymer with at least one ionizable group having a pKa ranging from about -9 to about 11.
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