Temperature dependence of characteristic parameters of the H-terminated Sn/p-Si(1 0 0) Schottky contacts

The current–voltage (I–V) characteristics of CrNiCo alloy Schottky contacts on a molecular-beam epitaxy n-GaAs substrate have been measured over the temperature range of 130–330 K and have been interpreted based on the assumption of a Gaussian distribution of barrier heights due to barrier height inhomogeneities that prevail at the interface. It is shown that the occurrence of Gaussian distribution of then barrier heights is responsible for the decrease of the apparent barrier height Φb0, increase of the ideality factor n and nonlinearity in the activation energy plot at low temperatures. A Φb0 vs 1/T plot was drawn to obtain evidence of a Gaussian distribution of the barrier heights, and values of Φb0(T=0)=1.02 eV and σ0=0.105 V for the mean barrier height and zero-bias standard deviation, respectively, have been obtained from this plot. Thus, a modified ln(I0/T2)−q2σ02/2k2T2 vs 1/T plot gives Φb0(T=0) and A* as 1.02 eV and 5.13 A/cm2 K2, respectively, without using the temperature coefficient of the b...

Temperature dependent barrier characteristics of CrNiCo alloy Schottky contacts on n-type molecular-beam epitaxy GaAs

In order to good interpret the experimentally observed non-ideal Al/SnO2/p-Si (MIS) Schottky diode parameters such as the barrier height ΦB, series resistance Rs and density of interface states Nss, a calculation method has been reported by taking into account interfacial oxide layer and ideality factor n in the current transport mechanism. The current–voltage (I–V) and capacitance–voltage (C–V) characteristics of MIS diodes are studied over a wide temperature range of 80–350 K. The effects of Rs, interfacial layer and Nss on I–V and C–V characteristics are investigated. The values of n were strongly temperature dependent and decreased with increasing temperature. The energy distribution of Nss was determined from the forward bias I–V characteristics by taking into account the bias dependence of the effective barrier height. The mean Nss estimated from I–V and C–V measurements decreased with increasing temperature. The Rs estimated from Cheung’s functions was strongly temperature dependent and decreased with increasing temperature. The I–V characteristics confirmed that the distribution of Nss, Rs and interfacial layer are important parameters that influence the electrical characteristics of MIS devices.

The role of interface states and series resistance on the I–V and C–V characteristics in Al/SnO2/p-Si Schottky diodes

Temperature and frequency dependent electrical and dielectric properties of Al/SiO2/p-Si (MOS) structure

Electrical characterization of Au/n-ZnO Schottky contacts on n-Si

In this study, we have attempted to interpret experimentally observed non-ideal AlpSi Schottky diode I-V and C−2−V characteristics which are due to an interface layer, interface states and fixed surface charge. A value of 0.68 eV for the barrier height qΦBo for AlpSi diodes without interface layer and fixed surface charge has been obtained from C−2−V characteristics and a value of 0.20 eV for the neutral level of the surface states has been found. Furthermore, the value of the barrier height qΦBp without fixed surface charge and the effective barrier height qΦBp,o are separately obtained from C−2-V characteristics. In addition, values of interface state density Dit have been calculated.

Parameter extraction from non-ideal C−V characteristics of a Schottky diode with and without interfacial layer

Schottky diodes were fabricated by evaporation of Al on a strongly etched n-type Si surface for 3 min after mechanical cleaning. The measurements of one of the better working of the Al-nSi diodes has been carried out at room temperature. Two expressions were found for the ideality factor n by supposing that all the interface states at first are in equilibrium with the metal and then with the semiconductor. The diode showed non-ideal I–V behaviour with an ideality factor of 1.46. The density distribution of interface states was obtained from the forward bias I–V characteristics. Non-linearity or curvature in the reverse bias C -2 − V plots was a quantity called the “excess capacitance” C 0 caused by the presence of the interface states. The excess capacitance was observed to decrease with increasing frequency: this behaviour was ascribed to the fact that the apparent density of the interface states decreases with increasing frequency. In addition, the parameters obtained from C − V characteristics were corrected by means of a simple graphical method for excess capacitance suggested by Vasudev et al. and of a theoretical model of an MIS structure introduced by Fonash.

Determination of the density of Si-metal interface states and excess capacitance caused by them

A metallic polypyrrole film has been formed on a p-type Si substrate by means of an anodization process An investigation of the formed polymer/pSi Schottky diodes has been made The polypyrrole polymer provides a good rectifying contact to the p-Si semiconductor The current-voltage (barrier height Φb0 = 084 eV) and capacitance-voltage (Φb0 = 094 eV) characteristics of the devices are significantly improved with increasing Φb0 and decreasing the ideality factor (n = 120) after a polymer melt processing step These values of Φb0 are significantly larger than those of conventional Schottky diodes Furthermore this study shows that owing to its room temperature processing the high barrier-metallic polypyrrole/pSi structures can be useful for deep level characterisation of p-Si

Mustafa Saǧlam

Papers

Parameter extraction from non-ideal C−V characteristics of a Schottky diode with and without interfacial layer

Determination of the density of Si-metal interface states and excess capacitance caused by them

High barrier metallic polymer/p-type silicon schottky diodes

High-barrier height Sn/p-Si schottky diodes with interfacial layer by anodization process

Thermal treatment of the MIS and intimate Ni/n-LEC GaAs Schottky barrier diodes