A new microlaser design based on the high‐reflectivity whispering‐gallery modes around the edge of a thin semiconductor microdisk is described and initial experimental results are presented. Optical confinement within the thin disk plane results in a microresonator with potential for single‐mode, ultralow threshold lasers. Initial experiments use selective etching techniques in the InP/InGaAsP system to achieve 3–10 μm diameter disks as thin as 500 A suspended in air or SiO2 on an InP pedestal. Optically pumped InGaAs quantum wells provide sufficient gain when cooled with liquid nitrogen to obtain single‐mode lasing at 1.3 and 1.5 μm wavelengths with threshold pump powers below 100 μW.

http://eaton.math.rpi.edu/CSUMS/Papers/Whisper/McCall&al91.pdf

Whispering-gallery mode microdisk lasers

Following a brief introduction to the applications for wavelength conversion and the different available conversion techniques, the paper gives an in depth analysis of cross gain and cross phase wavelength conversion in semiconductor optical amplifiers. The influence of saturation filtering on the bandwidth of the converters is explained and conditions for conversion at 20 Gb/s or more are identified. The cross gain modulation scheme shows extinction ratio degradation for conversion to longer wavelengths. This can be overcome using cross phase modulation in semiconductor optical amplifiers that are integrated into interferometric structures. The first results for monolithic integrated interferometric wavelength converters are reviewed, and the quality of the converted signals is demonstrated by transmission of 10 Gb/s converted signals over 60 km of nondispersion shifted single mode fiber.

All-optical wavelength conversion by semiconductor optical amplifiers

The authors have recently demonstrated 57 nm of tuning in a monolithic semiconductor laser using conventional distributed-Bragg-reflector (DBR) technology with grating elements removed in a periodic fashion. They describe the theory and design of these so-called sampled-grating tunable lasers. They calculate sample-grating reflectivity, and present normalized design curves which quantify tradeoffs involved in a sampled-grating DBR laser with two mismatched sampled-grating mirrors. These results are applied to a design example in the InP-InGaAsP system. The design provides 70-nm tuning while maintaining >30-dB mode suppression ratio (MSR), with fractional index change Delta mu / mu >

Theory, design, and performance of extended tuning range semiconductor lasers with sampled gratings

The authors present a detailed theoretical and experimental investigation of the nonlinear dynamics of a semiconductor laser with optical feedback. The results show that the coherence collapsed state is a chaotic attractor and that chaos is reached for increasing feedback level through a quasi-periodic route interrupted by frequency locking. Furthermore, the coexistence of two attractors, associated with the same external cavity mode, but having different relaxation oscillation frequencies, is demonstrated and explained. >

Chaos in semiconductor lasers with optical feedback: theory and experiment

The theory of nondegenerate four-wave mixing (NDFWM) in semiconductor lasers and amplifiers is presented with particular emphasis on the physical processes that lead to population pulsations. In the case of nearly degenerate four-wave mixing, modulation of the carrier density at the beat frequency Ω of the pump and probe waves creates a dynamic population grating whose effectiveness is governed by the spontaneous carrier lifetime τs. Such a grating affects both the gain and the refractive index of the probe wave. In particular, the probe gain exhibits features analogous to those observed in a detuned atomic system arising from the optical Stark effect. Both the gain grating and the index grating contribute to NDFWM, with the dominant contribution coming from the index grating. For detunings such that Ωτs ≫ 1, population pulsations correspond to modulation of the intraband population arising from spectral hole burning. Our results show that NDFWM is then limited by the phase-mismatch effects governed by the transit time τ rather than by the intraband population-relaxation time T1. Significant NDFWM is expected to occur for detunings up to about 300 GHz for typical transit-time values of 3 psec in semiconductor lasers.

Population pulsations and nondegenerate four-wave mixing in semiconductor lasers and amplifiers

The current status and future applications to lightwave transmission of long-wavelength semiconductor lasers emitting near 1.3 and 1.55- mu m are described. Bit-error-rate curves for a transmission experiment at 8 Gb/s over 76 km of fiber are shown, and schematics of a high-speed distributed feedback laser and a multielectrode distributed Bragg reflector laser are presented. >

N.K. Dutta

Papers

Long-wavelength semiconductor lasers