This article provides a review about electroluminescence from organic materials and deals in detail with organic light-emitting diodes (OLEDs), light-emitting electro-chemical cells (LECs) and electrogenerated chemilumi-nescence (ECL) reflecting different electrooptical appli-cations of conjugated materials. It is written from an organic chemist's point of view and pays particular attention to the development of organic materials involved in corresponding devices. In recent years a substantial amount of both academic and industrial research has been directed to organic electroluminescence in an effort to improve the processability and tunability of organic materials and the longevity of OLEDs and LECs. On the eve of the commercialization of organic electrolumi-nescence this review provides an overview of lifetimes and efficiencies attained and reflects materials and device concepts developed over the last decade. In this context electrogenerated chemiluminescence is discussed with respect to its importance as a versatile tool to simulate the fundamental electrochemical processes in OLEDs.

The electroluminescence of organic materials

Damascene copper electroplating for on-chip interconnections, a process that we conceived and developed in the early 1990s, makes it possible to fill submicron trenches and vias with copper without creating a void or a seam and has thus proven superior to other technologies of copper deposition. We discuss here the relationship of additives in the plating bath to superfilling, the phenomenon that results in superconformal coverage, and we present a numerical model which accounts for the experimentally observed profile evolution of the plated metal.

Damascene copper electroplating for chip interconnections

Dynamic Windows with Neutral Color, High Contrast, and Excellent Durability Using Reversible Metal Electrodeposition

Starburst triarylamines 2 and 3 were electropolymerized to form electrochromic thin films. Film from 2 showed intense absorption at 372 nm before voltage was applied. There were two absorption bands at 496 nm and 1000−2000 nm at 0.3 V, and a broad band, which peaked at 807 nm at 0.6 V. Film from 3 showed intense absorption at 372 nm before voltage was applied. There were two absorption bands at 498 nm and 1000−2000 nm at 0.3 V, and a broad band, which peaked at 890 nm at 0.7 V. The switching time studies revealed that thin film from 2 would require 3 s at 0.46 V for switching absorbance at 1600 nm and 1 s for bleaching. It would also require 4 s at 0.66 V for coloration at 800 nm and 2 s for bleaching. On the other hand, thin film from 3 would require 3 s at 0.46 V for switching absorbance at 1500 nm and 1 s for bleaching. It would also require 3.3 s at 0.76 V for switching absorbance at 900 nm and 1.5 s for bleaching. Electropolymerized thin films of 2 and 3 were also used as the surface modification lay...

Electropolymerization of Starburst Triarylamines and Their Application to Electrochromism and Electroluminescence

Electrochemical doping properties and morphology changes of electropolymerized poly(N-vinylcarbazole) (PVK) thin films were investigated toward improved hole-injection/transport properties in polymer light emitting diode (PLED) devices. The conjugated network polycarbazole thin films (resulting from a poly(N-carbazole) (PCz) network) were prepared by electrodeposition of PVK and/or N-vinylcarbazole comonomer via precursor route and were investigated in situ by electrochemical-surface plasmon resonance spectroscopy (EC-SPS). Distinct doping-dedoping properties and morphology transitions were observed with different compositions of PVK and Cz. By electrochemical doping of the cross-linked conjugated polycarbazole units, the electrochemical equilibrium potential (Eeq), which correlates to Fermi level (Ef) or the work function (φw) of the film, was adjusted in the vicinity of the anode electrode. The conjugated network PCz films were then used as a hole-injection/transport layer in a two layer device. Remarka...

Investigating work function tunable hole-injection/transport layers of electrodeposited polycarbazole network thin films

http://jes.ecsdl.org/content/158/12/D715.full.pdf

High-Speed Through Silicon Via(TSV) Filling Using Diallylamine Additive

High Speed Through Silicon Via Filling by Copper Electrodeposition

An electrochemically deposited composite film of poly(3-substituted thiophen) and insulating nitrile butadiene rubber (NBR) was used as the emission layer of a polymer electroluminescence (EL) device. The composite film on an ITO substrate was uniform, and by using this film current leakage was prevented. The device with the composite film as the EL emission layer shows rectification properties, the emitted color depending on the substituent of thiophen units. By coating with NBR after the electrodeposition of a poly(3-substituted thiophen) film, EL characteristics were improved compared with the device with NBR coating performed before electropolymerization. Moreover, by using electropolymerized poly(3-n-octylthiophen) film as a hole transporting layer, the luminance of an organic EL device with a poly(N-vinylcarbazole) dip-coating layer was remarkably enhanced. The addition of the hole transporting layer reduced the turn-on bias voltage and increased the emission intensity to 700 cd m 2 .

Organic Electroluminescence Device Based on an Electrodeposited Poly(3‐substituted thiophen) Film

Single Diallylamine-Type Copolymer Additive Which Perfectly Bottom-Up Fills Cu Electrodeposition

In the manufacture of metal interconnects for semiconductor devices, trenches and vias in dielectric layers on the Si wafer are filled by copper electrodeposition. The acceleration of deposition at the bottom of trenches and vias is a key to the bottom-up filling of these high aspect ratio cavities. We report the detection of this acceleration effect by rotating ring disk electrode experiments. The Cu (I)-complex, which forms on the disk electrode, was captured as a current (Iring) on the ring electrode. Iring increased in periodic reverse pulse current mode, as compared to direct or pulse current. The periodic reverse pulse current produced the most bottom-up filling based on microscopic observations of via cross sections. Iring increased with the additions of Cl−, which also produced greater bottom-up filling. Iring increased with additions of SPS, which were also found to improve bottom-up filling.

Naoki Okamoto

Papers

High-Speed Through Silicon Via(TSV) Filling Using Diallylamine Additive

High Speed Through Silicon Via Filling by Copper Electrodeposition

Organic Electroluminescence Device Based on an Electrodeposited Poly(3‐substituted thiophen) Film

Single Diallylamine-Type Copolymer Additive Which Perfectly Bottom-Up Fills Cu Electrodeposition

Correlation between Cu (I)-complexes and filling of via cross sections by copper electrodeposition