In a method of inspecting a sample on which a pattern relating to fabrication of a semiconductor device is formed, there are provided a light radiation unit, an acquiring unit, a storage unit, a template, a calculation unit, a correction unit, a defect detection unit and an output unit Pinhole shape data to be detected of the pattern is stored in the template The calculation unit calculates the degree of coincidence between the pinhole shape data stored in the template and the measured image data stored in the storage unit in units of a predetermined amount of data The correction unit corrects a portion of the measured image data corresponding to a value of the degree of coincidence exceeding a second predetermined value in units of the predetermined amount of data, when the degree of coincidence obtained by the calculation unit has exceeded a first predetermined value, thereby correcting the portion of the measured image data including the detected pinhole The defect detection unit detects a defect in the pattern on the basis of the corrected measured image data portion including the pinhole, which is obtained by the correcting unit, and the measured image data

Sample inspection apparatus and sample inspection method

A periodic line and space pattern made of chromium film is formed on a glass substrate, and a phase shifter is arranged on every other transparent portion of the line and space pattern. Using a stepper and the phase shift mask, photoresist film coated on a wafer is exposed several times to light of i-line by varying the focus, then developed. Next, the width Ws of the photoresist pattern formed by the exposure to the light through the phase shifter, and the width Wo of the photoresist pattern formed by the exposure to the light without passing through the phase shifter are measured. Based on the relation between Ws and Wo for defocusing, the transmittance error and the phase shift angle error of the phase shifter are obtained.

Phase shift mask and its inspection method

A photomask has a monitoring pattern configured to obtain information required for adjusting optical system of a projection lithography tool. The monitoring pattern encompasses a mask substrate and an asymmetrical diffraction grating delineated on the mask substrate, configured to generate a positive first order diffracted light and a negative first order diffracted light in different diffraction efficiencies. The asymmetrical diffraction grating includes a plurality of probing-phase shifters, disposed periodically on the mask substrate in parallel, and a plurality of opaque strips disposed on light-shielding faces of the probing-phase shifters. An asymmetrically recessed ridge implements each of the probing-phase shifters.

Photomask, method of lithography, and method for manufacturing the photomask

A reticle has a mask substrate, a test pattern established on the mask substrate having an asymmetrical diffraction grating so as to generate positive first order diffracting light and negative first order diffracting light in different diffraction efficiencies, and a device pattern adjacent to the test pattern established on the mask substrate.

Reticle, apparatus for monitoring optical system, method for monitoring optical system, and method for manufacturing reticle

The mask defect inspection apparatus including an illumination optical system for illuminating a mask on which a pattern is formed; an objective lens facing the mask; at least a pair of detection optical systems having a detection sensor for obtaining an image of the pattern, respectively, and which receive illumination light from illumination areas different from each other through the objective lens, respectively; and focusing changing means for changing a position of focusing between sites of the pattern in a film-thickness direction of the mask and the pattern images obtained by the detection sensors, such that the pattern images obtained by the detection sensors are changed corresponding to the film-thickness direction of the mask.

Mask defect inspection apparatus

PURPOSE: To completely inspect the defect of a photomask provided with a phase member by optimizing the aperture-stop of an illuminating optical system and the aperture-stop of a photoelectric detection means. CONSTITUTION: By moving the holding bodies 11a and 11b of the photomask 10, an image pickup signal processing circuit 19 fetches a light quantity signal from an image pickup element 17 and transmits it to a comparison computing element 20 in synchronism with a signal generated from a positional information generator such as an encoder, etc., which is provided in the position detecting means of a driving motor 12 or the photomask 10. Meanwhile, the signal from the positional information generator is transmitted to the computing element 20, which reads out corresponding circuit pattern information from a storage device 21 in response to the signal. The computing element 20 compares two pieces of information, that is, the information obtained from the element 17 and the information obtained from the device 21. When a remarkable difference is found out between both of them, it is judged that there is the defect in the circuit pattern 10a of the photomask 10. COPYRIGHT: (C)1992,JPO&Japio

Naomasa Shiraishi

Papers

Photomask inspecting device