Course Description This is an advanced course in which we explore the field of Statistical Optics. Topics covered include such subjects as the statistical properties of natural (thermal) and laser light, spatial and temporal coherence, effects of partial coherence on optical imaging instruments, effects on imaging due to randomly inhomogeneous media, and a statistical treatment of the detection of light. Development of this more comprehensive model of the behavior of light draws upon the use of tools traditionally available to the electrical engineer, such as linear system theory and the theory of stochastic processes.

http://ieeexplore.ieee.org/iel5/3/23094/01073023.pdf

Statistical optics

The phase-shifting mask consists of a normal transmission mask that has been coated with a transparent layer patterned to ensure that the optical phases of nearest apertures are opposite. Destructive interference between waves from adjacent apertures cancels some diffraction effects and increases the spatial resolution with which such patterns can be projected. A simple theory predicts a near doubling of resolution for illumination with partial incoherence σ < 0.3, and substantial improvements in resolution for σ < 0.7. Initial results obtained with a phase-shifting mask patterned with typical device structures by electron-beam lithography and exposed using a Mann 4800 10× tool reveals a 40-percent increase in usuable resolution with some structures printed at a resolution of 1000 lines/mm. Phase-shifting mask structures can be used to facilitate proximity printing with larger gaps between mask and wafer. Theory indicates that the increase in resolution is accompanied by a minimal decrease in depth of focus. Thus the phase-shifting mask may be the most desirable device for enhancing optical lithography resolution in the VLSI/VHSIC era.

Improving resolution in photolithography with a phase-shifting mask

Lithography is a field in which advances proceed at a swift pace. This book was written to address several needs, and the revisions for the second edition were made with those original objectives in mind. Many new topics have been included in this text commensurate with the progress that has taken place during the past few years, and several subjects are discussed in more detail. This book is intended to serve as an introduction to the science of microlithography for people who are unfamiliar with the subject. Topics directly related to the tools used to manufacture integrated circuits are addressed in depth, including such topics as overlay, the stages of exposure, tools, and light sources. This text also contains numerous references for students who want to investigate particular topics in more detail, and they provide the experienced lithographer with lists of references by topic as well. It is expected that the reader of this book will have a foundation in basic physics and chemistry. No topics will require knowledge of mathematics beyond elementary calculus.

Principles of Lithography

Extreme ultraviolet lithography (EUVL) was thoroughly reviewed over a broad range of topics, including history, tools, source, metrology, condenser and projection optics, resists, and masks. Since 1988, many studies on EUVL have been conducted in North America, Europe, and Japan, through state sponsored programs and industrial consortiums. To date, no “show stopper” has been identified, but challenges are present in almost all aspects of EUVL technology. Commercial alpha lithography step-and-scan tools are installed with full-field capability; however, EUVL power at intermediate focus (IF) has not yet met volume manufacturing requirements. Compared with the target of 180W IF power, current tools can supply only approximately 55–62W. EUV IF power has been improved gradually from xenon- to tin-discharge-produced plasma or laser-produced plasma. EUVL resist has improved significantly in the last few years, with 25nm 1:1 line/space resolution being produced with approximately 2.7nm (3σ) line edge roughness. A...

Extreme ultraviolet lithography: A review

Plasma etching technologies such as reactive ion etching (RIE), isotropic etching, and ashing/plasma cleaning are the currently used booster technologies for manufacturing all silicon devices based on the scaling law. The needs-driven conversion from the wet etching process to the plasma/dry etching process is reviewed. The progress made in plasma etching technologies is described from the viewpoint of requirements for the manufacturing of devices. The critical applications of RIE, isotropic etching, and plasma ashing/cleaning to form precisely controlled profiles of high-aspect-ratio contacts (HARC), gate stacks, and shallow trench isolation (STI) in the front end of line (FEOL), and also to form precise via holes and trenches used in reliable Cu/low-k (low-dielectric-constant material) interconnects in the back end of line (BEOL) are described in detail. Some critical issues inherent to RIE processing, such as the RIE-lag effect, the notch phenomenon, and plasma-induced damage including charge-up damage are described. The basic reaction mechanisms of RIE and isotropic etching are discussed. Also, a procedure for designing the etching process, which is strongly dependent on the plasma reactor configuration, is proposed. For the more precise critical dimension (CD) control of the gate pattern for leading-edge devices, the advanced process control (APC) system is shown to be effective.

https://iopscience.iop.org/article/10.1143/JJAP.47.1435/pdf

Developments of Plasma Etching Technology for Fabricating Semiconductor Devices

Alternating phase-shifting mask (Alt.PSM) technology is the most effective approach to expand resolution limitation and expand the process window of lithography. Currently, etched quartz Alt.PSMs have been introduced not only for device development but also for production use. Adapting the etched quartz structure, we need to consider about transmission difference between etched and un-etched regions. So, side-etching method has been used for such structure of Alt.PSMs. We have been supplying Alt.PSMs with side-etching and single trench structures for the mass-production of KrF lithography. As design rule of device pattern have been tightening, in 100nm node and further, narrow chrome width limits the undercut width and which should be optimized for ArF lithography. Moreover, proximity effect has been reported for the shifter edge type Alt.PSMs as pitch dependency of printed line CD. We will report about the side-etching optimization whether limited undercut width can compensate the CD imbalance between etched and un-etched regions. Or, how much bias adding at space width of etched regions can compensate it, or how undercut and space biasing combination affect CD imbalance. We also discuss about whether the line bias can correct to targeted line CD. Finally, we will summarize which structure is recommended for 100nm-node Alt.PSM for ArF lithography. On the other hand, for the case the undercut structure turns out to be difficult in the 100nm-Alt.PSM manufacturing, we will report preliminary manufacturing results of the new structure.

100nm-Alt.PSM structure discussion for ArF lithography

An alternating phase shift masks can improve resolution and lithographic latitude. However, Alt-PSMs have not yet become practical because of difficulty in their tight phase and defect control. In this paper, we focused on how to control both phase uniformity and phase mean value of etched quartz shifters. We found that a material of a dry-etching tale (cover plate of work electrode) was strongly affected for phase uniformity. By choosing an adequate material, phase uniformity of 1.9% could be achieved. Micro-loading effect and loading effect degrade phase controllability. Loading effect was not observed in our etching conditions. But micro-loading effect was observed. Back exposure process was useful to prevent micro-loading effect. To improve mean value controllability, 2 step etching process was adopted. By using this method, mean value cold be controlled within plus or minus 2 degrees.

Phase controllability improvement for alternating phase shift mask

According to the ITRS Roadmap, the EUV mask requirement for 2X nm technology node is detection of defect size of
20 nm. The history of optical mask inspection tools involves continuous efforts to realize higher resolution and higher
throughput. In terms of productivity, considering resolution, throughput and cost, we studied the capability of EUV light
inspection and Electron Beam (EB) inspection, using Scanning Electron Microscope (SEM), including prolongation of
the conventional optical inspection. As a result of our study, the solution we propose is EB inspection using Projection
Electron Microscope (PEM) technique and an image acquisition technique to acquire inspection images with Time Delay
Integration (TDI) sensor while the stage is continually moving. We have developed an EUV mask inspection tool,
EBeyeM, whole design concept includes these techniques. EBeyeM for 2X nm technology node has the following targets,
for inspection sensitivity, defects whose size is 20 nm must be detected and, for throughput, inspection time for particle
and pattern inspection mode must be less than 2 hours and 13 hours in 100 mm square, respectively. Performance of the
proto-type EBeyeM was reported. EBeyeM for 2X nm technology node was remodeled in light of the correlation
between Signal to Noise Ratio (SNR) and defect sensitivity for the proto-type EBeyeM. The principal remodeling points
were increase of the number of incident electrons to TDI sensor by increasing beam current for illuminating optics and
realization of smaller pixel size for imaging optics.
This report presents the performance of the remodeled EBeyeM (=EBeyeM for 2X nm) and compares it with that of the
proto-type EBeyeM. Performances of image quality, inspection sensitivity and throughput reveal that the EBeyeM for
2X nm is improved. The current performance of the EBeyeM for 2X nm is inspection sensitivity of 20 nm order for both
pattern and particle inspection mode, and throughput is 2 hours in 100 mm square for particle inspection mode.

Performance of EBeyeM for EUV mask inspection

The effect of mask structure with light shield area on the printability in EUV lithography was studied. When very
thin absorber on EUVL mask is used for ULSI application, it then becomes necessary to create EUV light shield area
on the mask in order to suppress possible leakage of EUV light from neighboring exposure shots. We proposed and
fabricated two types of masks with very thin absorber and light shield area structure. For both types of masks we
demonstrated high shield performances at light shield areas by employing a Small Field Exposure Tool (SFET).

EUVL practical mask structure with light shield area for 32nm half pitch and beyond

We are developing new electron beam inspection system, named EBeyeM, which features high speed and high
resolution inspection for EUV mask. Because EBeyeM has the projection electron microscope technique, the scan time
of EBeyeM is much faster than that of conventional SEM inspection system.
We developed prototype of EBeyeM. The aim of prototype system is to prove the concept of EBeyeM and to estimate
the specification of system for 2Xnm and 1Xnm EUV mask.
In this paper, we describe outline of EBeyeM and performance results of the prototype system. This system has two
inspection mode. One is particle inspection and the other is pattern defect inspection. As to the sensitivity of EBeyeM
prototype system, the development target is 30nm for the particle inspection mode and 50nm for pattern defect
inspection mode. The performance of this system was evaluated. We confirmed the particle inspection mode of the
prototype system could detect 30nm PSL(Polystyrene Latex) and the sensitivity was much higher than conventional
optical blank inspection system. And we confirmed that the pattern defect sensitivity of the prototype system was
around 45nm. It was recognized that both particle inspection mode and pattern defect inspection mode met the
development target. It was estimated by the performance results of the prototype system that the specification of
EBeyeM would be able to achieve for 2Xnm EUV mask. As to 1Xnm EUV mask, we are considering tool concept to
meet the specification.

Naoya Hayashi

Papers

100nm-Alt.PSM structure discussion for ArF lithography

Phase controllability improvement for alternating phase shift mask

Performance of EBeyeM for EUV mask inspection

EUVL practical mask structure with light shield area for 32nm half pitch and beyond

Development of EB inspection system EBeyeM for EUV mask