Showing papers by "Neil Gordon published in 1990"
TL;DR: In this article, the authors show that long wavelength diodes in CdxHg1−xTe show large deviations from ideality in their reverse characteristics, which is attributed to band to band tunneling at high reverse bias and to trap assisted tunneling with low reverse bias.
Abstract: Long wavelength diodes in CdxHg1−xTe show large deviations from ideality in their reverse characteristics The excess currents are attributed in many published papers on band to band tunneling at high reverse bias and to trap assisted tunneling at low reverse bias Measurements of photocurrent multiplication, current–voltage characteristics, and noise have been made on long wavelength loophole diodes to determine the breakdown mechanism This has produced strong evidence that the reverse characteristics of good quality diodes of this type are limited by impact ionization At higher biases, there is evidence of an additional breakdown mechanism, probably tunneling
43 citations
TL;DR: In this article, Electrolyte electroreflectance with in-situ electrochemical etching is successfully employed to reveal compositional variations and lattice strain that occurs in CMT epilayer structures grown on GaAs 〈100〉 by the IMP-MOVPE method, with a CdTe cap on the surface.
9 citations