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Noboru Ohtani
Researcher at Kwansei Gakuin University
Publications - 159
Citations - 2179
Noboru Ohtani is an academic researcher from Kwansei Gakuin University. The author has contributed to research in topics: Reflection high-energy electron diffraction & Silicon carbide. The author has an hindex of 25, co-authored 154 publications receiving 1953 citations. Previous affiliations of Noboru Ohtani include Imperial College London & Nippon Steel.
Papers
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Sublimation growth of 6H- and 4H-SiC single crystals in the [11¯0 0] and [1 12¯0] directions
TL;DR: In this paper, a modified-Lely method was used to study the growth of 6H and 4H-SiC single crystals in parallel and perpendicular directions to the [0 0 0 1] basal plane.
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Mechanism of Molten KOH Etching of SiC Single Crystals: Comparative Study with Thermal Oxidation
TL;DR: In this article, a comparative study of SiC etching with thermal oxidation in regard to the crystal orientation, polytype and carrier concentration dependence was conducted. But, the etching process is significantly affected by the etch ambience: the rate is greatly reduced by a nitrogen gas purge, which indicates an essential role of dissolved oxygen in the melt.
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Investigation of heavily nitrogen-doped n+ 4H-SiC crystals grown by physical vapor transport
Noboru Ohtani,Masakazu Katsuno,Masashi Nakabayashi,Tatsuo Fujimoto,Hiroshi Tsuge,Hirokatsu Yashiro,Takashi Aigo,Hosei Hirano,Taizo Hoshino,Kohei Tatsumi +9 more
TL;DR: In this article, the structural quality of heavily nitrogen-doped n + 4H-SiC single crystals was examined by X-ray rocking curve measurements and defect selective etching by molten KOH at around 500-°C.
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A RHEED study of the surface reconstructions of Si(001) during gas source MBE using disilane
TL;DR: In this paper, the growth of Si(001) from a gas-source molecular beam epitaxy system (Si-GSMBE) using disilane (Si 2 H 6 ) was investigated using RHEED.
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Structural defects in α-SiC single crystals grown by the modified-Lely method
TL;DR: In this article, a structural characterization of single crystalline α-SiC has been conducted by X-ray topography using the modified-Lely method, and wafers perpendicular and parallel to the growth directions of the grown crystals were examined by transmission topographs of the Lang method.