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Noboru Shimizu
Researcher at Hitachi
Publications - 10
Citations - 167
Noboru Shimizu is an academic researcher from Hitachi. The author has contributed to research in topics: Magnetic field & Magnetoresistance. The author has an hindex of 5, co-authored 10 publications receiving 167 citations. Previous affiliations of Noboru Shimizu include HGST.
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Patent
Multilayer magnetoresistance effect-type magnetic head
Ryoichi Nakatani,Masahiro Kitada,Naoki Koyama,Isamu Yuito,Hisashi Takano,Eijin Moriwaki,Mikio Suzuki,Masaaki Futamoto,Fumio Kugiya,Yoshibumi Matsuda,Kazuo Shiiki,Yoshinori Miyamura,Kyo Akagi,Takeshi Nakao,Hirotsugu Fukuoka,Takayuki Munemoto,Tokuho Takagaki,Toshio Kobayashi,Hideo Tanabe,Noboru Shimizu +19 more
TL;DR: The magnetoresistance effect element is of a multilayered structure having at least magnetic layers and an intermediate layer of an insulating material, a semiconductor or an antiferromagnetic material against the magnetic layers, so that a current flows in the intermediate layer as discussed by the authors.
Patent
Magnetoresistance effect elements, magnetic heads and magnetic storage apparatus
Ryoichi Nakatani,Masahiro Kitada,Naoki Koyama,Isamu Yuito,Hisashi Takano,Eijin Moriwaki,Mikio Suzuki,Masaaki Futamoto,Fumio Kugiya,Yoshibumi Matsuda,Kazuo Shiiki,Yoshinori Miyamura,Kyo Akagi,Takeshi Nakao,Hirotsugu Fukuoka,Takayuki Munemoto,Tokuho Takagaki,Toshio Kobayashi,Hideo Tanabe,Noboru Shimizu +19 more
TL;DR: The magnetoresistance effect element is of a multilayered structure having at least magnetic layers and an intermediate layer of an insulating material, a semiconductor or an antiferromagnetic material against the magnetic layers, so that a current flows in the intermediate layer as mentioned in this paper.
Patent
Magnetoresistance effect multilayer film with ferromagnetic film sublayers of different ferromagnetic material compositions
Ryoichi Nakatani,Masahiro Kitada,Naoki Koyama,Isamu Yuito,Hisashi Takano,Eijin Moriwaki,Mikio Suzuki,Masaaki Futamoto,Fumio Kugiya,Yoshibumi Matsuda,Kazuo Shiiki,Yoshinori Miyamura,Kyo Akagi,Takeshi Nakao,Hirotsugu Fukuoka,Takayuki Munemoto,Tokuho Takagaki,Toshio Kobayashi,Hideo Tanabe,Noboru Shimizu +19 more
TL;DR: The magnetoresistance effect element is of a multilayered structure having at least magnetic layers and an intermediate layer of an insulating material, a semiconductor or an antiferromagnetic material against the magnetic layers, respectively, so that a current flows in the intermediate layer.
Patent
Formation of electrodes for magnetoresistive sensor
TL;DR: In this paper, a double-layer structure of Mo and Al on a film of a magnetoresistive material such as permalloy is formed to have a predetermined pattern, firstly by exposing an Al layer to a chemical etching solution or subjecting the Mo layer to the ion-milling treatment to give said Al layer said pattern, and then subjecting aMo layer to either reactive sputter etching or plasma etching treatment.
Patent
Magnetic head with conductors formed on endlayers of a multilayer film having magnetic layer coercive force difference
Ryoichi Nakatani,Masahiro Kitada,Naoki Koyama,Isamu Yuito,Hisashi Takano,Eijin Moriwaki,Mikio Suzuki,Masaaki Futamoto,Fumio Kugiya,Yoshibumi Matsuda,Kazuo Shiiki,Yoshinori Miyamura,Kyo Akagi,Takeshi Nakao,Hirotsugu Fukuoka,Takayuki Munemoto,Tokuho Takagaki,Toshio Kobayashi,Hideo Tanabe,Noboru Shimizu +19 more
TL;DR: The magnetoresistance effect element is of a multilayered structure having at least magnetic layers and an intermediate layer of an insulating material, a semiconductor or an antiferromagnetic material against the magnetic layers as discussed by the authors.