Patent
Multilayer magnetoresistance effect-type magnetic head
Ryoichi Nakatani,Masahiro Kitada,Naoki Koyama,Isamu Yuito,Hisashi Takano,Eijin Moriwaki,Mikio Suzuki,Masaaki Futamoto,Fumio Kugiya,Yoshibumi Matsuda,Kazuo Shiiki,Yoshinori Miyamura,Kyo Akagi,Takeshi Nakao,Hirotsugu Fukuoka,Takayuki Munemoto,Tokuho Takagaki,Toshio Kobayashi,Hideo Tanabe,Noboru Shimizu +19 more
TLDR
The magnetoresistance effect element is of a multilayered structure having at least magnetic layers and an intermediate layer of an insulating material, a semiconductor or an antiferromagnetic material against the magnetic layers, so that a current flows in the intermediate layer as discussed by the authors.Abstract:
The magnetoresistance effect element is of a multilayered structure having at least magnetic layers and an intermediate layer of an insulating material, a semiconductor or an antiferromagnetic material against the magnetic layers, and the magnetoresistance effect element has terminals formed at least on the opposite magnetic layers, respectively, so that a current flows in the intermediate layer. The film surfaces of all the magnetic layers constituting the magnetoresistance effect element are opposed substantially at right angles to the recording surface of a magnetic recording medium. Therefore, the area of the magnetic layers facing the recording surface of the magnetic recording medium can be extremely reduced, and thus the magnetic field from a very narrow region of the high-density recorded magnetic recording medium can be detected by the current which has a tunneling characteristic and passes through the intermediate layer.read more
Citations
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Patent
Magnetoresistance effect element
TL;DR: In this paper, the magnetoresistance effect element has two ferromagnetic layers, a non-magnetic layer provided between the two layers, and a layer containing an oxide or nitride as a principal component.
PatentDOI
Thin film magnetic head
Yamada Masamichi,Kurebayashi Masaaki,Saito Masakatsu,Hitoshi Yanagihara,Konishi Katsuo,Toshio Tsuchiya +5 more
TL;DR: In this paper, a thin film magnetic head includes an upper shield section, a lower shield section and a magnetoresistance device section between the upper shield and the lower shield sections.
Patent
CPP Magnetoresistive device with reduced edge effect and method for making same
TL;DR: A magnetoresistive (MR) device includes a sensor that has a first surface electrically coupled to a first lead structure, and a second surface connected to a second lead structure as discussed by the authors.
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Magnetic tunnel junction device with longitudinal biasing
TL;DR: A magnetic tunnel junction device for use as a magnetic memory cell or a magnetic field sensor has one fixed ferromagnetic layer and one sensing magnetometer on opposite sides of the insulating tunnel barrier layer.
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Current perpendicular-to-the-plane spin valve type magnetoresistive transducer
John West Dykes,Young Keun Kim +1 more
TL;DR: In this paper, a spin valve structure comprising a pinned ferromagnetic layer adjoining a first end portion of a transducer and a freely rotating ferromagnetism layer adjoining an oppositely disposed second end portion thereof is described.
References
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Journal ArticleDOI
Conductance and exchange coupling of two ferromagnets separated by a tunneling barrier.
TL;DR: In this article, a theory is given for three closely related effects involving a nonmagnetic electron-tunneling barrier separating two ferromagnetic conductors, and the theory predicts that the valve effect is weak and that the coupling is antiferromagnetic (Jl0).
Patent
Magnetoresistive sensor based on the spin valve effect
Bernard Dieny,Bruce A. Gurney,S.E. Lambert,Daniele Mauri,Stuart S. P. Parkin,Virgil Simon Speriosu,Dennis R. Wilhoit +6 more
TL;DR: In this article, the spin valve effect was defined for a magnetoresistive sensor with a first and a second thin film layer of a magnetic material separated by a thin film of a non-magnetic metallic material.
Patent
Antiferromagnetic-ferromagnetic exchange bias films
TL;DR: In this article, a pair of layers of a ferromagnetic and an antiferromagnetic material are deposited upon one another and exchange coupled to retain a unidirectional bias in the plane of the material.
PatentDOI
Magnetic transducer head utilizing magnetoresistance effect
TL;DR: In the MR magnetic head of the present invention, its sensing element (2) comprises a plurality of superposed magnetic layers (4,5) having magnetoresistance effect in at least one of them and a nonmagnetic intermediate layer (3) sandwiched therebetween, and a sensing current is fed to flow in the sensing element in the same direction as a signal magnetic field applied to the element as discussed by the authors.
Patent
Magnetic field sensor with ferromagnetic thin layers having magnetically antiparallel polarized components
TL;DR: A magnetic field sensor comprises a stack of ferromagnetic layers advantageously separated by an intermediate layer of proper material and arranged so that the layers are with one component in an antiparallel magnetization direction.