The present invention is a system that positions an interface for a pen-based computer at an end of a natural user motion arc, such as an arc a hand travels when an elbow is pivoted. Positioning of the interface in a lower corner of a display or window (left corner for a right-handed person and right corner for a left-handed person) allows easy approach when the user is working in the center of the display, such as when drawing on the pen-based computer display. An arc or curved interface improves approach zones and reduces unintended selections of controls or buttons within the interface. The arc allows the natural motion to be extended by wrist or finger motions to access all the controls in the corner command interface. Controls on the arc are placed to allow any underlying pop-up menus to be completely accessible when an activated. Overflow menu items of activated controls of the interface are located in conformity to the natural arc.

User interface having a placement and layout suitable for pen-based computers

The present invention discloses a transferring method, a manufacturing method, a device and an electronics apparatus of micro-LED. The method for transferring micro-LED at wafer level comprises: temporarily bonding micro-LEDs on a laser-transparent original substrate onto a carrier substrate via a first bonding layer; irradiating the original substrate with laser, to lift-off selected micro-LESs; performing a partial release on the first bonding layer, to transfer the selected micro-LEDs to the carrier substrate; temporarily bonding the micro-LEDs on the carrier substrate onto a transfer head substrate via a second bonding layer; performing a full release on the first bonding layer, to transfer the micro-LEDs to the transfer head substrate; bonding the micro-LEDs on the transfer head substrate onto a receiving substrate; and removing the transfer head substrate by releasing the second bonding layer, to transfer the micro-LEDs to the receiving substrate.

Transferring method, manufacturing method, device and electronic apparatus of micro-led

A structure on a layer surface of the semiconductor wafer comprises at least one first surface (8,9) area reflecting electromagnetic radiation and at least one second substantially non-reflecting surface area (10,11,12). A transparent insulating layer (13) and a light-sensitive layer are produced on said layer surface. Electromagnetic radiation is directed at the light-sensitive layer at an incident angle θ and the structure of the layer surface is imaged onto the light-sensitive layer with a lateral replacement.

Method for the production of a self-adjusted structure on a semiconductor wafer

A method of designing a pattern of a hole pattern having a configuration, in which grid of interval smaller than a minimum permissible pitch according to a design rule for a semiconductor integrated circuit is provided in a pattern drawing, a hole pattern is arranged on a first lattice point which is an intersection of the grid, and, at the same time, other hole patterns are not arranged on a second lattice point group which is on the periphery of the first lattice point, and is adjacent to the first lattice point is provided. And, the number of hole patterns, which may be arranged in a third lattice point group of a plurality of lattice points which are on the periphery of a second lattice point group and are within a predetermined distance from the first lattice point, is controlled.

Method of designing a pattern

A semiconductor integrated circuit has a central processing unit and a rewritable nonvolatile memory area disposed in an address space of the central processing unit. The nonvolatile memory area has a first nonvolatile memory area and a second nonvolatile memory area, which memorize information depending on the difference of threshold voltages. The first nonvolatile memory area has the maximum variation width of a threshold voltage for memorizing information set larger than that of the second nonvolatile memory area. When the maximum variation width of the threshold voltage for memorizing information is larger, since stress to a memory cell owing to a rewrite operation of memory information becomes larger, it is inferior in a point of guaranteeing the number of times of rewrite operation; however, since a read current becomes larger, a read speed of memory information can be expedited. The first nonvolatile memory area can be prioritized to expedite a read speed of the memory information and the second nonvolatile memory area can be prioritized in guaranteeing the number of times of rewrite operation of memory information more.

Semiconductor Integrated circuit

On the occasion of the aligning process to transfer a predetermined pattern to a semiconductor wafer by irradiating a photoresist on the semiconductor wafer with an aligning laser beam of the modified lighting via a photomask MK, the photomask MK allocating, to provide periodicity, the main apertures to transfer the predetermined pattern as the apertures formed by removing a part of the half-tone film on the mask substrate and the auxiliary apertures not resolved on the semiconductor wafer as the apertures formed by removing a part of the half-tone film is used to improve the resolution of the pattern

Fabrication method of semiconductor integrated circuit device

The period of time required for the development or manufacture of an integrated circuit is decreased. A photomask (PM1) including part of an opaque resist pattern (3a) in addition to an opaque pattern (2a) is used to transfer an integrated circuit pattern to a wafer by exposure.

Method of manufacturing integrated circuit

In order to suppress or prevent the occurrence of foreign matter in the manufacture of a semiconductor integrated circuit device by the use of a photo mask constituted in such a manner that a resist film is made to function as a light screening film, inspection or exposure treatment is carried out, when the photo mask 1 PA 1 has been mounted on a predetermined apparatus such as, e.g., an inspection equipment or aligner, in the state in which a mounting portion 2 of the predetermined apparatus is contacted with that region of a major surface of a mask substrate 1 a of the photo mask 1 PA 1 in which a light shielding pattern 1 b and a mask pattern 1 mr , each formed of a resist film, on the major surface of the mask substrate 1 a do not exist.

Method for manufacturing semiconductor integrated circuit device, optical mask used therefor, method for manufacturing the same, and mask blanks used therefor

Method of manufacturing semiconductor integrated circuit device optical mask therefor, its manufacturing method, and mask blanks

In order to shorten the time needed for fabricating semiconductor integrated circuit devices, a wafer is exposed while a chip area with defects of a mask is covered with a masking blade for light shielding.

Norio Hasegawa

Papers

Fabrication method of semiconductor integrated circuit device

Method of manufacturing integrated circuit

Method for manufacturing semiconductor integrated circuit device, optical mask used therefor, method for manufacturing the same, and mask blanks used therefor

Method of manufacturing semiconductor integrated circuit device optical mask therefor, its manufacturing method, and mask blanks

Method of fabrication of semiconductor integrated circuit device