This paper presents a diagnostic and prognostic condition monitoring method for insulated-gate bipolar transistor (IGBT) power modules for use primarily in electric vehicle applications. The wire-bond-related failure, one of the most commonly observed packaging failures, is investigated by analytical and experimental methods using the on-state voltage drop as a failure indicator. A sophisticated test bench is developed to generate and apply the required current/power pulses to the device under test. The proposed method is capable of detecting small changes in the failure indicators of the IGBTs and freewheeling diodes and its effectiveness is validated experimentally. The novelty of the work lies in the accurate online testing capacity for diagnostics and prognostics of the power module with a focus on the wire bonding faults, by injecting external currents into the power unit during the idle time. Test results show that the IGBT may sustain a loss of half the bond wires before the impending fault becomes catastrophic. The measurement circuitry can be embedded in the IGBT drive circuits and the measurements can be performed in situ when the electric vehicle stops in stop-and-go, red light traffic conditions, or during routine servicing.

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In Situ Diagnostics and Prognostics of Wire Bonding Faults in IGBT Modules for Electric Vehicle Drives

This paper discusses various types of failure mechanisms, precursor parameters, and accelerated aging-based procedures to estimate the remaining life of power electronic devices. Special attention has been given to summarize the different techniques typically used for measuring the junction temperature, because it plays a vital role during accelerated aging and condition monitoring. We reviewed more than 250 papers, and the references list 139 of them in order to explain and address the advantages and disadvantages of various techniques toward the reliability prognosis. Thus, this paper can be considered as an expedient reference to conduct future research on lifetime prediction of existing power electronic devices.

A Comprehensive Review Toward the State-of-the-Art in Failure and Lifetime Predictions of Power Electronic Devices

Remaining useful lifetime prediction and extension of Si power devices have been studied extensively. Silicon carbide (SiC) power devices have been developed and commercialized. Specifically, SiC mosfet s have been utilized for the next generation high-voltage, high-power converters with smaller size and higher efficiency, covering various mainstream applications, including photovoltaic systems, electric vehicles, solid-state transformers, and more electric ships and airplanes. However, the SiC-based devices have different failure modes and mechanisms compared with Si counterparts. Therefore, a comprehensive review is critical to develop accurate lifetime prediction and extension strategies for SiC power converter systems. The SiC power device component-level failure modes and mechanisms are first investigated. Different accelerated lifetime tests and component-level lifetime models are then compared. Power converter system-level offline lifetime modeling techniques and software tools are further summarized. Besides, the SiC power converter condition monitoring strategies and health indicators are surveyed. The online measurement challenges are also studied. Furthermore, the system-level lifetime extension strategies are reviewed. By integrating device physics, statistical modeling, reliability engineering, and mechanical engineering with power electronics, this article is intended to provide a comprehensive overview, address existing challenges, and unfold new research opportunities regarding the SiC power converter real-time lifetime prediction and extension.

Overview of Real-Time Lifetime Prediction and Extension for SiC Power Converters

The electronics industry has successfully transitioned from Sn/Pb to Pb free (LF) solder for computing and consumer electronics applications. However, there is no industry-wide standardized LF solder joint reliability model (neither empirical nor FEA-based) available for solder fatigue reliability assessment. A LF solder fatigue model has been proposed in this paper based on a 3-parameter modified Coffin-Manson approach. The proposed model showed best fit to the experimental data (17 pairs of temperature cycle test data) from different sources for multiple package types and sizes including various test conditions. The model fit to the experimental data was excellent and the error was less than 6%. This analysis showed that the LF acceleration factor (AF) model is not significantly different from the Sn/Pb model and proposed model provides best fit to experimental results.

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An acceleration model for lead-free (SAC) solder joint reliability under thermal cycling

A solder interconnect fatigue life model was developed by Werner Engelmaier in the early 1980s as an improvement upon the inelastic strain range-based Coffin-Manson model. As developed, the model provides a first-order estimate of cycles to failure for SnPb solder interconnects under power and thermal cycles. While the model has been widely adopted for SnPb solder joint reliability prediction, many issues that arise from simplifications in formulating input model parameters as well as from the complex physics of solder degradation challenge the model's ability to accurately estimate cycles to failure. Deficiencies with the model have been reported by a number of researchers. This paper reviews and summarizes the major issues with the Engelmaier model in its applicability to predict solder joint thermal fatigue life.

Critical Review of the Engelmaier Model for Solder Joint Creep Fatigue Reliability

In this paper, the acceleration factors for lead-free solder materials are discussed. The focus is on the analytical models proposed by Norris-Landzberg, Pan, and Salmela. As most reliability prediction models are originally created for eutectic SnPb solder material, it is expected that the models must be recalibrated in order to be useful in conjunction with lead-free solder materials. Pan et al. have reparameterized the Norris-Landzberg's model for SnAgCu already earlier. However, the data provided by Syed did not fit very well the reparameterized Norris-Landzberg model. An approach to explain this, and a benchmark of results based on alternative parameter value selections, is presented. The underlying assumptions related to the Norris-Landzberg's model and the applicability of the model in case of lead-free solders is discussed. Finally, an alternative form of Norris-Landzberg's equation is introduced and the fit of the existing experimental data to the proposed model is studied.

O. Salmela

Papers

Acceleration Factors for Lead-Free Solder Materials