A system and process of an extreme ultraviolet lithography (EUVL) is disclosed. The system and process includes receiving a mask with two states, which have 180 degree phase difference to each other. These different states are assigned to adjacent main polygons and adjacent assist polygons of the mask. A nearly on-axis illumination (ONI) with partial coherence σ less than 0.3 is utilized to expose the mask to produce diffracted lights and non-diffracted lights. A majority portion of the non-diffracted lights and diffracted light with diffraction order higher than 1 are removed. Diffracted light having +1-st and −1-st diffracted order are collected and directed by a projection optics box (POB) to expose a target.

Extreme ultraviolet lithography process and mask

Embodiments of methods of etching EUV photomasks are provided herein. In one embodiment, a method of etching an extreme ultraviolet photomask includes providing a photomask comprising, in order, a substrate, a multi-material layer, a capping layer, and a multi-layer absorber layer, the multilayer absorber layer comprising a self-mask layer disposed over a bulk absorber layer, wherein the self-mask layer comprises tantalum and oxygen and the bulk absorber layer comprises tantalum and essentially no oxygen; etching the self-mask layer using a first etch process; and etching the bulk absorber layer using a second etch process different than the first, wherein the etch rate of the bulk absorber layer is greater than the etch rate of the self-mask layer during the second etch process.

Method of etching extreme ultraviolet light (EUV) photomasks

PROBLEM TO BE SOLVED: To provide a mask for EUV exposure improved in transfer resolution by EUV exposure, and to provide a mask blank for EUV exposure and an exposure method. SOLUTION: In the mask for extreme ultraviolet ray exposure having a high-reflection section comprising a multilayered film formed on a substrate and a single-layer film formed on one portion of the multilayer film, reflection light from the low-reflection section has a reflection factor of 5-15% to reflection light from the high-reflection factor, and has a phase difference of 175-185 degrees to reflection light from the high-reflection section. A reflection factor (1-δ) and an exhaustion coefficient β to the exposure wavelength of a single-layer film for composing the low-reflection section are within a region for connecting prescribed punctual coordinates (1-δ, β) on plane coordinates with the reflection factor (1-δ) and an exhaustion coefficient β as coordinate axes. COPYRIGHT: (C)2006,JPO&NCIPI

Mask for extreme ultraviolet ray exposure, mask blank, and exposure method

Provided is a reflection-type mask blank for EUV lithography, which has an absorbing body layer and with which reflectivity in the wavelength region of EUV light and pattern testing light is low and controlling the film composition and film thickness to predetermined levels can be easily accomplished. The reflection-type mask blank for EUV lithography has a reflection layer for reflecting EUV light and an absorbing body layer for absorbing EUV light, which are formed in succession on a substrate; the absorbing body layer contains at least tantalum (Ta), boron (B), nitrogen (N), and hydrogen (H); and the absorbing body layer has a B content that is 1 at% or greater but less than 5 at%, an H content that is between 0.1 and 5 at%, a Ta + N total content that is between 90 and 98.9%; and a Ta:N composition ratio that is between 8:1 and 1:1.

Reflection-type mask blank for EUV lithography

PROBLEM TO BE SOLVED: To provide a reflection type photomask blank that permits highly accurate inspection by suppressing reflection factor on the surface of an absorption layer in inspection wavelength, has high smoothness of the absorption layer surface as well as appropriate dry etching workability with high anisotropy, and can be used in an EUV photolithography wherein the uppermost surface of the absorption layer is prevented from being charged up, and to provide a reflection type photomask and a method of manufacturing a semiconductor device using the same. SOLUTION: The reflection type photomask blank 10 is provided with a multilayer reflection film 2 for reflecting exposure light and an absorption layer 4 for absorbing the exposure light that are formed in sequence on a substrate 1, and the absorption layer 4 is comprised of an upper layer film 42 that is made of a material containing Ta, Si and O, or O and N, and a lower layer film 41 made of a material containing Ta and Si, thus showing a lamination structure. The extinction coefficient of the upper layer film 42 in inspection wavelength is smaller than 1, and the sheet resistance of the upper layer film 42 is lower than 50 MΩ/sq. COPYRIGHT: (C)2009,JPO&INPIT

Reflection type photomask blank and reflection type photomask, and method of manufacturing semiconductor device

It is aimed to improve the accuracy of testing when a pattern of a reflective photomask used for EUV lithography is examined by observing the reflectance contrast of a DUV light Specifically disclosed is a reflective photomask blank wherein a multilayer reflective film (2) and a light absorptive laminate (4) are arranged on a substrate (1) The light absorptive laminate (4) is composed of a first light absorptive layer (41) with EUV light absorbing ability which contains tantalum and silicon, and a second light absorptive layer (42) with DUV light absorbing ability which is arranged on the first absorptive layer (41) and contains tantalum, silicon and at least one of nitrogen and oxygen

o Toppan Printing Co. Ltd. Kanayama

Papers

Reflective photomask blank, reflective photomask, and method for manufacturing semiconductor device using same