Patent
Reflective photomask blank, reflective photomask, and method for manufacturing semiconductor device using same
Koichiro c,o Toppan Printing Co. Ltd. Kanayama,Tadashi c,o Toppan Printing Co. Ltd. Matsuo,Yasushi Toppan Printing Co. Ltd. Nishiyama +4 more
TLDR
In this article, a pattern of a reflective photomask used for EUV lithography is examined by observing the reflectance contrast of a DUV light, and a multilayer reflective film (2) and a light absorptive laminate (4) are arranged on a substrate.Abstract:
It is aimed to improve the accuracy of testing when a pattern of a reflective photomask used for EUV lithography is examined by observing the reflectance contrast of a DUV light Specifically disclosed is a reflective photomask blank wherein a multilayer reflective film (2) and a light absorptive laminate (4) are arranged on a substrate (1) The light absorptive laminate (4) is composed of a first light absorptive layer (41) with EUV light absorbing ability which contains tantalum and silicon, and a second light absorptive layer (42) with DUV light absorbing ability which is arranged on the first absorptive layer (41) and contains tantalum, silicon and at least one of nitrogen and oxygenread more
Citations
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Patent
Extreme ultraviolet lithography process and mask
TL;DR: In this article, a system and process of extreme ultraviolet lithography (EUVL) is described, which includes receiving a mask with two states, which have 180 degree phase difference to each other.
Patent
Method of etching extreme ultraviolet light (EUV) photomasks
TL;DR: In this paper, a method of etching an extreme ultraviolet photomask is described, in order, a substrate, a multi-material layer, a capping layer, and a multilayer absorber layer.
Patent
Mask for extreme ultraviolet ray exposure, mask blank, and exposure method
TL;DR: In this paper, a mask for extreme ultraviolet ray exposure with a high-reflection section comprising a multilayered film and a single-layer film formed on one portion of the multilayer film is presented.
Patent
Reflection-type mask blank for EUV lithography
TL;DR: In this article, a reflection-type mask blank for EUV lithography has been proposed, which has an absorbing body layer and with which reflectivity in the wavelength region of EUV light and pattern testing light is low.
Patent
Reflection type photomask blank and reflection type photomask, and method of manufacturing semiconductor device
TL;DR: In this article, a multilayer reflection type photomask blank is provided with a multi-layer reflection film 2 for reflecting exposure light and an absorption layer 4 for absorbing the exposure light that are formed in sequence on a substrate.
References
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Patent
Optimized capping layers for EUV multilayers
TL;DR: In this paper, a capping multilayer structure for EUV-reflective Mo/Si multilayers is proposed, which consists of two layers: a top layer that protects the multi-layer structure from the environment and a bottom layer that acts as a diffusion barrier between the top layer and the structure beneath.
Patent
Reflection type mask blank and reflection type mask and production methods for them
TL;DR: In this paper, a reflection type mask blank comprising a substrate and, sequentially formed thereon, a reflection layer (12) for reflecting an exposure light in a short-wave region including an extreme ultraviolet region and an absorber layer (16) for absorbing the exposure light.
Patent
Reflection-type exposure mask
TL;DR: In this article, a reflection-type exposure mask was used in an EUV lithography technique, where a multilayered film 2 composed of two or more kinds of material layers which are cyclical laminated is formed on a base substrate 1, and a mask pattern pattern 11 of nitride-containing metal film or of laminated structure of a metal nitride film and a metal film was formed on the multilayed film 2.
Patent
Double-metal EUV mask absorber
TL;DR: In this paper, a composite extreme ultraviolet light (EUV) mask absorber structure and method was proposed to address the structural and processing requirements of EUV lithography, which is anisotropic etched with minimal etch bias at a relatively fast etch rate.
Patent
Reflecting type exposure mask, its manufacturing method and semiconductor element
Masashi Takahashi,政志 高橋 +1 more
TL;DR: In this article, a reflecting type exposure mask is proposed to suppress a positional deviation of a mask pattern and improve a contrast at a mask examining time with a DUV light without affecting an adverse influence to resolution in the mask used for an EUV lithography.