Spintronics, or spin electronics, involves the study of active control and manipulation of spin degrees of freedom in solid-state systems. This article reviews the current status of this subject, including both recent advances and well-established results. The primary focus is on the basic physical principles underlying the generation of carrier spin polarization, spin dynamics, and spin-polarized transport in semiconductors and metals. Spin transport differs from charge transport in that spin is a nonconserved quantity in solids due to spin-orbit and hyperfine coupling. The authors discuss in detail spin decoherence mechanisms in metals and semiconductors. Various theories of spin injection and spin-polarized transport are applied to hybrid structures relevant to spin-based devices and fundamental studies of materials properties. Experimental work is reviewed with the emphasis on projected applications, in which external electric and magnetic fields and illumination by light will be used to control spin and charge dynamics to create new functionalities not feasible or ineffective with conventional electronics.

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Spintronics: Fundamentals and applications

The modern version of the KKR (Korringa–Kohn–Rostoker) method represents the electronic structure of a system directly and efficiently in terms of its single-particle Green's function (GF). This is in contrast to its original version and many other traditional wave-function-based all-electron band structure methods dealing with periodically ordered solids. Direct access to the GF results in several appealing features. In addition, a wide applicability of the method is achieved by employing multiple scattering theory. The basic ideas behind the resulting KKR-GF method are outlined and the different techniques to deal with the underlying multiple scattering problem are reviewed. Furthermore, various applications of the KKR-GF method are reviewed in some detail to demonstrate the remarkable flexibility of the approach. Special attention is devoted to the numerous developments of the KKR-GF method, that have been contributed in recent years by a number of work groups, in particular in the following fields: embedding schemes for atoms, clusters and surfaces, magnetic response functions and anisotropy, electronic and spin-dependent transport, dynamical mean field theory, various kinds of spectroscopies, as well as first-principles determination of model parameters.

https://iopscience.iop.org/article/10.1088/0034-4885/74/9/096501/pdf

Calculating condensed matter properties using the KKR-Green's function method—recent developments and applications

Spintronics refers commonly to phenomena in which the spin of electrons in a solid state environment plays the determining role In a more narrow sense spintronics is an emerging research field of electronics: spintronics devices are based on a spin control of electronics, or on an electrical and optical control of spin or magnetism This review presents selected themes of semiconductor spintronics, introducing important concepts in spin transport, spin injection, Silsbee-Johnson spin-charge coupling, and spindependent tunneling, as well as spin relaxation and spin dynamics The most fundamental spin-dependent nteraction in nonmagnetic semiconductors is spin-orbit coupling Depending on the crystal symmetries of the material, as well as on the structural properties of semiconductor based heterostructures, the spin-orbit coupling takes on different functional forms, giving a nice playground of effective spin-orbit Hamiltonians The effective Hamiltonians for the most relevant classes of materials and heterostructures are derived here from realistic electronic band structure descriptions Most semiconductor device systems are still theoretical concepts, waiting for experimental demonstrations A review of selected proposed, and a few demonstrated devices is presented, with detailed description of two important classes: magnetic resonant tunnel structures and bipolar magnetic diodes and transistors In most cases the presentation is of tutorial style, introducing the essential theoretical formalism at an accessible level, with case-study-like illustrations of actual experimental results, as well as with brief reviews of relevant recent achievements in the field

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Semiconductor Spintronics

Review on spintronics: Principles and device applications

The discovery of enhanced magnetoresistance and oscillatory interlayer exchange coupling in transition metal multilayers just over a decade ago has enabled the development of new classes of magnetically engineered magnetic thin-film materials suitable for advanced magnetic sensors and magnetic random access memories. Magnetic sensors based on spin-valve giant magnetoresistive (GMR) sandwiches with artificial antiferromagnetic reference layers have resulted in enormous increases in the storage capacity of magnetic hard disk drives. The unique properties of magnetic tunnel junction (MTJ) devices has led to the development of an advanced high performance nonvolatile magnet random access memory with density approaching that of dynamic random-access memory (RAM) and read-write speeds comparable to static RAM. Both GMR and MTJ devices are examples of spintronic materials in which the flow of spin-polarized electrons is manipulated by controlling, via magnetic fields, the orientation of magnetic moments in inhomogeneous magnetic thin film systems. More complex devices, including three-terminal hot electron magnetic tunnel transistors, suggest that there are many other applications of spintronic materials.

Magnetically engineered spintronic sensors and memory

Based on model and ab initio calculations we discuss the effect of resonant interface states on the conductance of epitaxial tunnel junctions. In particular we show that the ``hot spots'' found by several groups in ab initio calculations of symmetrical barriers of the ${\mathbf{k}}_{\ensuremath{\Vert}}$-resolved conductance can be explained by the formation of bonding and antibonding hybrids between the interface states on both sides of the barrier. If the resonance condition for these hybrid states is met, the electron tunnels through the barrier without attenuation. Even when both hybrid states move together and form a single resonance, strongly enhanced transmission is still observed. The effect explains why, for intermediate barrier thicknesses, the tunneling conductance can be dominated by interface states, although hot spots only occur in a tiny fraction of the surface Brillouin zone.

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Effects of resonant interface states on tunneling magnetoresistance

We consider the spin injection from Fe into ZnSe and GaAs in the ballistic limit. By means of the ab initio screened Korringa-Kohn-Rostoker method we calculate the ground-state properties of epitaxial Fe‖ZnSe(001) and Fe‖GaAs(001) heterostructures. Three injection processes are considered: injection of hot electrons and injection of "thermal" electrons with and without an interface barrier. The calculation of the conductance by the Landauer formula shows that these interfaces act like a nearly ideal spin filter, with spin polarization as high as 99%. This can be traced back to the symmetry of the band structure of Fe for normal incidence.

Ballistic Spin Injection from Fe(001) into ZnSe and GaAs

We present ab initio calculations of the spin-dependent electronic transport in Fe/GaAs/Fe and Fe/ZnSe/Fe (001) junctions simulating the situation of a spin-injection experiment. We follow a ballistic Landauer-B\"uttiker approach for the calculation of the spin-dependent dc conductance in the linear-response regime, in the limit of zero temperature. We show that the bulk band structure of the leads and of the semiconductor, and even more the electronic structure of a clean and abrupt interface, are responsible for a current polarization and a magnetoresistance ratio of almost the ideal 100%, if the transport is ballistic. In particular, we study the significance of the transmission resonances caused by the presence of two interfaces.

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Ballistic spin injection and detection in Fe/semiconductor/Fe junctions

http://imel.demokritos.gr/~npapanik/MyPapers/JMMM_Complex.pdf

Importance of complex band structure and resonant states for tunneling

We present first-principles calculations of ballistic spin injection in Fe/GaAs and Fe/ZnSe junctions with orientations (001), (111), and (110). We find that the symmetry mismatch of the Fe minority spin states with the semiconductor conduction states can lead to extremely high spin polarization of the current through the (001) interface for hot and thermal injection processes. Such a symmetry mismatch does not exist for the (111) and (110) interfaces, where smaller spin injection efficiencies are found. The presence of interface states at the Fermi energy is found to lower the current spin polarization.

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O. Wunnicke

Papers

Effects of resonant interface states on tunneling magnetoresistance

Ballistic Spin Injection from Fe(001) into ZnSe and GaAs

Ballistic spin injection and detection in Fe/semiconductor/Fe junctions

Importance of complex band structure and resonant states for tunneling

Ballistic spin injection from Fe into ZnSe(001), (111), and (110), and into GaAs(001)