An active matrix display device having a pixel structure in which pixel electrodes, gate wirings and source wirings are suitably arranged in the pixel portions to realize a high numerical aperture without increasing the number of masks or the number of steps. The device comprises a gate electrode and a source wiring on an insulating surface, a first insulating layer on the gate electrode and on the source wiring, a semiconductor layer on the first insulating film, a second insulating layer on the semiconductor film, a gate wiring connected to the gate electrode on the second insulating layer, a connection electrode for connecting the source wiring and the semiconductor layer together, and a pixel electrode connected to the semiconductor layer.

Semiconductor Device and Method of Fabricating the Same

An object is to provide a method for manufacturing a semiconductor device, in which the number of photolithography steps can be reduced, the manufacturing process can be simplified, and manufacturing can be performed with high yield at low cost A method for manufacturing a semiconductor device includes the following steps: forming a semiconductor film; irradiating a laser beam by passing the laser beam through a photomask including a shield for shielding the laser beam; subliming a region which has been irradiated with the laser beam through a region in which the shield is not formed in the photomask in the semiconductor film; forming an island-shaped semiconductor film in such a way that a region which is not irradiated with the laser beam is not sublimed because it is a region in which the shield is formed in the photomask; forming a first electrode which is one of a source electrode and a drain electrode and a second electrode which is the other one of the source electrode and the drain electrode; forming a gate insulating film; and forming a gate electrode over the gate insulating film

Method for Manufacturing Semiconductor Device

Multiple sequential processes are conducted in a reaction chamber to form ultra high quality silicon-containing compound layers, including silicon nitride layers. In a preferred embodiment, a silicon layer is deposited on a substrate using trisilane as the silicon precursor. A silicon nitride layer is then formed by nitriding the silicon layer. By repeating these steps, a silicon nitride layer of a desired thickness is formed.

Method to form ultra high quality silicon-containing compound layers

Silicon alloys and doped silicon films are prepared by chemical vapor deposition and ion implantation processes using Si-containing chemical precursors as sources for Group III and Group V atoms. Preferred dopant precursors include (H3Si)3-xMRx, (H3Si)3N, and (H3Si)4N2, wherein R is H or D, x = 0, 1 or 2, and M is selected from the group consisting of B, P, As, and Sb. Preferred deposition methods produce non-hydrogenated silicon alloy and doped Si-containing films, including crystalline films.

Dopant precursors and processes

This invention pertains to a method for producing hydrogenated silicon oxycarbide (H:SiOC) films having low dielectric constant. The method comprises reacting an methyl-containing silane in a controlled oxygen environment using plasma enhanced or ozone assisted chemical vapor deposition to produce the films. The resulting films are useful in the formation of semiconductor devices and have a dielectric constant of 3.6 or less.

Method for producing hydrogenated silicon oxycarbide films having low dielectric constant

PURPOSE:To perform stable operation characterized by high mobility, by using a silicon film made by thermal CVD of high-order silane such as trisilane or higher as a channel semiconductor film of a thin film transistor. CONSTITUTION:On an insulating substrate 1, a gate 2 comprising Ni, W, Mo and the like is formed by evaporation, sputtering and the like. A gate insulating film 3 such as a silicon oxide film and silicon nitride film is laminated by a CVD method and the like on the gate 2. A silicon film 4 of high-order silane such as trisilane or higher is formed by a thermal CVD method on the film 3. A source 5 and a drain 6, which have doublelayer structure of a P-or N-type low resistance semiconductor film and a metal film, are formed. An inverted staggered type thin film transistor is formed. The silicon film 4 is formed as follows: the substrate is heated to a temperature of about 400 deg.C; the high order silane such as the trisilane or higher is introduced in a chamber 7; and the film 4 is formed on the surface of the substrate by thermal decomposition reaction on the substrate.

Manufacture of thin film transistor

PURPOSE: To form an amorphous silicon film having a sufficient deposition rate and excellent electric characteristics by a method wherein a thermal CVD method is performed at the substrate temperature of 480°C or below using trisilane or higher silanes. CONSTITUTION: The substrate 4 consisting of a wafer and the like is inserted into the chamber 1 consisting of a heating means 2, a susceptor 3, a gas blow- out hole 5, the exhaust hole and the like connected to a gas exhaust means 7, they are placed on the upper surface of the susceptor 3. When they are heated up to 400°C or thereabout by a heating means 2, the silane of high order which is higher than trisilane is introduced into the chamber 1. As a result, an amorphous silicon film is formed on the surface of the substrate 4 by thermal decomposition reaction. At this time, atmospheric gas is introduced into the chamber 1 in advance, and after the temperature of the substrate 4 has been stabilized, raw gas is introduced, and the temperature variation when a film is formed can be made small substantially by performing a thermal CVD. COPYRIGHT: (C)1988,JPO&Japio

Manufacture of silicon film

PURPOSE:To obtain a silicon oxide film whose dielectric strength is high, whose hysteresis characteristic such as a polarization or the like is small and whose storage of electric charge is small by a method wherein a component ratio of oxygen atoms to silicon atoms in a mixed gas of an organic silane introduced into a reduced-pressure container and oxygen gas or a nonmetal oxide gas is set at 100 or higher CONSTITUTION:A silicon substrate is fixed to a substrate holder 2 The substrate is heated by using a substrate heater 6 Then, laughing gas is supplied from a laughing-gas introduction system 5b and monomethyl silane is supplied from a monomethyl-silane gas introduction system 5a to a reduced-pressure container 1, respectively; after that, these gases are mixed in a gas mixer 5c; after that, the mixture is introduced into the reduced-pressure container 1 In this case, a component ratio of oxygen atoms/silicon atoms in a mixed gas inside the adjusted container 1 is set at 100 or higher Thereby, a hydrocarbon group remaining in a silicon oxide film does not remain in the film; it is possible to obtain the film whose dielectric strength and hysteresis characteristic are excellent

Manufacture of silicon oxide film

PURPOSE:To prevent the generation of various abnormal modes of plasma by a method wherein the plasma is confined in the expected vacant space CONSTITUTION:An insulative barrier member 10 is provided surrounding a pair of electrodes 3 and 3 The height L (the length along the direction astriding both electrodes 3 and 3) of the barrier member 10 exceeds the distance H between the two electrodes, the inside diameter R of the barrier member 10 is larger than the electrode diameter W, and the two electrodes 3 and 3 are housed therein Also, the gap (d) between the circumferential part of the two electrodes 3 and 3 and the corresponding inner face part of the barrier member 10 is provided to let out raw gas as shown by the arrow (fr) in the diagram, but the actual measurements can be set at an experimentally suitable value The gap (d) is 50mm or less in general, but desirably, it is 20mm or less, and an aperture or a part to be used for evacuation of air is provided separately on the barrier member 10 and the electrode 3 However, in the case where the length L of the barrier member 10 is shorter than the distance H between the electrodes, it is better to have D=0 without having the gap

Okazaki Satoshi

Papers

Manufacture of thin film transistor

Manufacture of silicon film

Manufacture of silicon oxide film

Capacity coupling type plasma chemical vapor deposition device