Patent
Manufacture of thin film transistor
Hayashi Yutaka,Masaaki Kamiya,Okazaki Satoshi,Ryoji Takada,Mitsuo Umemura,Mitsuyuki Yamanaka +5 more
TLDR
In this paper, a thermal CVD of high-order silane such as trisilane or higher was used as a channel semiconductor film of a thin-film transistor.Abstract:
PURPOSE:To perform stable operation characterized by high mobility, by using a silicon film made by thermal CVD of high-order silane such as trisilane or higher as a channel semiconductor film of a thin film transistor. CONSTITUTION:On an insulating substrate 1, a gate 2 comprising Ni, W, Mo and the like is formed by evaporation, sputtering and the like. A gate insulating film 3 such as a silicon oxide film and silicon nitride film is laminated by a CVD method and the like on the gate 2. A silicon film 4 of high-order silane such as trisilane or higher is formed by a thermal CVD method on the film 3. A source 5 and a drain 6, which have doublelayer structure of a P-or N-type low resistance semiconductor film and a metal film, are formed. An inverted staggered type thin film transistor is formed. The silicon film 4 is formed as follows: the substrate is heated to a temperature of about 400 deg.C; the high order silane such as the trisilane or higher is introduced in a chamber 7; and the film 4 is formed on the surface of the substrate by thermal decomposition reaction on the substrate.read more
Citations
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Patent
Method to form ultra high quality silicon-containing compound layers
TL;DR: In this article, multiple sequential processes are conducted in a reaction chamber to form ultra high quality silicon-containing compound layers, including silicon nitride layers, using trisilane as the silicon precursor.
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Method of fabricating silicon nitride nanodots
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Patent
Deposition from liquid sources
Michael A. Todd,Ivo Raaijmakers +1 more
TL;DR: In this article, a liquid injector is used to vaporize and inject a silicon precursor into a process chamber to form silicon-containing layers during a semiconductor fabrication process, where the mixture is metered as a liquid and delivered to the injector where it is then vaporized and injected into the process chamber.
References
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Patent
Amorphous silicon thin film transistor and manufacture thereof
TL;DR: In this paper, a gate electrode is formed on a semiconductor layer through an insulation layer, and N layers are formed in parallel isolated from each other on a clean surface of the semiconductor.
Patent
Formation of amorphous silicon film
TL;DR: In this article, the authors proposed a method to form an amorphous silicon film at low temperature, by employing a silane gas of higher order as a material gas, and irradiating the gas with light having a wavelength 300nm or shorter.
Patent
Manufacture of thin film transistor
Asakawa Hiroshi,Kogure Osamu +1 more
TL;DR: In this paper, the authors proposed a method to avoid cracking in a silicon layer and a glass substrate by a method wherein, after oxygen ions are selectively implanted in the silicon layer on the glass substrate, the silicon layers are selectively oxidized by annealing.
Patent
Formation of hydrogenated amorphous silicon film
TL;DR: In this paper, the authors propose to increase the growth speed of a hydrogenated amorphous silicon (a-Si-H) film and obtain a film having excellent heat resistance by decomposing thermally higher gaseous silane under atm pressure or above to deposit said film on a substrate.