In a massed region of each of a plurality of transfer areas of a mask a plurality of light transmission patterns are formed by opening a half-tone film A phase shifter is disposed in each of the light transmission patterns so that a 180° phase inversion occurs between the lights that transmit through adjacent light transmission patterns In a sparse region of the plurality of transfer areas a solitary light transmission pattern is formed by opening the half-tone film Both shape and size are the same among the light transmission patterns, which are disposed symmetrically in both the massed and sparse regions about the center between the transfer areas The phase shifters in the massed regions are disposed so that the phase of each phase shifter in one of the transfer areas comes to be opposed to that of its counterpart in the other transfer area In the exposure process, those transfer areas are overlaid one upon another in the same chip region

Manufacturing method of semiconductor integrated circuit device

A reflection type liquid crystal display device having a reflection electrode with an enhanced reflectivity and a method for fabricating the same includes a dimple on a convex of the reflection electrode. The method for fabricating such a reflection type liquid crystal display uses a photo-sensitive organic insulation film to form bumps for the convex-concave structure, thus increases only the number of times of exposures, thereby simplifying the overall process.

Reflection type liquid crystal display and a method for fabricating the same

An indwelling catheter for insertion into a patient's urinary tract is provided that includes first and second tubular members that enable drainage of physiological fluids. An inflatable balloon is attached to the second tubular member. The first and second tubular members are interconnected by a connecting tube forming a gap between the first and second tubular members. The connecting tube is in fluid communication with the balloon to enable the balloon to be inflated via the connecting tube. When the balloon is anchored within the urinary bladder the second tubular member is located within the prostatic urethra with one end in close proximity to the sphincter and the other end protruding into the urinary bladder. The first tubular member is located within the penile urethra with one end in close proximity to the sphincter so that the connecting tube traverses the sphincter permitting voluntary control of the sphincter.

Urethral catheter and guide

A memory test is carried out on semiconductor integrated circuit devices including a semiconductor memory at low cost with efficiency. In a test burn-in system, twenty-four test boards are processed in sequence with time differences, and the test boards are circulated one by one. In this case, the memory test is conducted with the sequence of single board processing: the test is started with a test board in which semiconductor integrated circuit devices have been embedded, and semiconductor integrated circuit devices are discharged, beginning with a test board that has undergone the test.

Fabrication method of semiconductor integrated circuit device

A mask pattern verification apparatus includes a semiconductor circuit layout unit for generating layout data from semiconductor circuit data, a super-resolution corresponding pattern verification unit for verifying a pattern of the layout data generated by the semiconductor circuit layout unit according to a pitch with a line width and a space width, an optical simulation unit carrying out optical simulation on an error site of a pitch detected by the super-resolution corresponding pattern verification unit to output light intensity, and a contour output unit for generating and providing a contour according to the light intensity output from the optical simulation unit.

Mask pattern verification apparatus employing super-resolution technique, mask pattern verification method employing super-resolution technique, and medium with program thereof

A technique to minimize an increase in the design and manufacture times required for making phase shift masks is provided. The process of the technique involves preparing a hole unit cell comprising one target hole and auxiliary holes located close to the four sides of the target hole, and then laying out on first layout data first hole unit cells 26c1 -26c3 arranged in a certain orientation at a first pitch and second hole unit cells 27c1 -27c3 arranged in the same orientation at a second pitch, narrower than the first pitch. This process generates data of hole groups, each comprising the target hole and auxiliary holes on a first phase shift mask that is used in forming hole patterns in a resist film coated over the semiconductor substrate.

Method of manufacturing phase shift masks and a method of manufacturing semiconductor integrated circuit devices

PROBLEM TO BE SOLVED: To prevent not only a reflection from a substrate but also the reflection from an atmosphere interface and decrease interference within a resist film, by a method wherein an underlaid reflection preventing film of a specified film thickness and an overlaid antireflection film are together used SOLUTION: A substrate on which an SiO2 film 11 is adhered is prepared on a silicon substrate 10 having an undercut, and a substrate surface is flattened by a CMP process Next, an underlaid antireflection film 1 of film thickness <=70 nm is coated A dissipating coefficient k of the underlaid antireflection film 1 is 05 or more, and the film is one of absorbing KrF excimer lights of about 93% A photoresist 3 is coated on the antireflection film 1 An overlaid antireflection film 2 is coated The film thickness and refractive index are set on conditions as antireflection With, the use of a photomask having a chrome pattern, exposure lights are irradiated on the photoresist 3 Here, the KrF excimer lights are used as the exposure lights, and a development process is performed to form a photoresist pattern 3a

Method for forming resist pattern

PURPOSE:To provide a phase shift mask with which transferred patterns of high dimensional accuracy are obtainable and a simple technique of producing this mask. CONSTITUTION:This phase shift mask has light shielding films 3 which are embedded in the selective regions on the front surface of a quartz substrate 1 consisting of a transparent material and are formed flush with the front surface of this quartz substrate 1 and transparent films 4 which constitute phase shifters disposed in the selective regions on the front surface of a quartz substrate 1 including the light shielding films 3. The transparent films 4 as the phase shifters are formed to a uniform film thickness and, therefore, the transferred mask patterns have the dimensional accuracy corresponding to the phase shift mask and the transfer is executed with the high dimensional accuracy in the case of exposing by using the phase shift mask.

Phase shift mask and its production

PURPOSE: To provide a technique capable of suppressing the design required for production of a phase shift mask and increase in production time. CONSTITUTION: A unit cell for hole is formed by constituting one actual opening and auxiliary opening groups disposed in proximity to the peripheral four sides thereof as a unit cell. The first unit cells 26c1 to 26c3 for hole arranged at a first pitch in the same orientation and the second unit cells 27c1 to 273 for hole arranged at a second pitch narrower than the first pitch in the same orientation are laid out on first layout data. Thereby, the data of the hole opening groups consisting of the actual openings and auxiliary opening groups of the first phase shift mask used at the time of forming the hole pattern groups on the resist film formed on a semiconductor substrate are formed.

Production of phase shift mask and production of semiconductor integrated circuit device

PROBLEM TO BE SOLVED: To easily and surely remove a silicon-contg. resist material which is unnecessary on a product by adhering an adhesive sheet on the product and peeling the sheet in the case of removing the silicon-contg. resist material which is unnecessary after a fine pattern is formed on a product. SOLUTION: A prescribed resist pattern 3 is formed by a multilayered resist process and the resist pattern 3 is used as a mask to form a fine pattern on a product 2 such as a silicon wafer. When the silicon-contg. resist material unnecessary on the product 2 is removed, an adhesive sheet 1 is laminated on the product 2. The sheet is heated and pressed so that the adhesive layer 11 is plasticized to sufficiently adhere to the silicon-contg. resist material. After this process, the sheet is hardened by irradiation of UV rays, and the sheet 1 is peeled in the direction shown as an arrow in the figure. Thus, the silicon- contg. resist material 3 on the product 2 is peeled and removed together with the adhesive sheet 1.

Onozuka Toshihiko

Papers

Method of manufacturing phase shift masks and a method of manufacturing semiconductor integrated circuit devices

Method for forming resist pattern

Phase shift mask and its production

Production of phase shift mask and production of semiconductor integrated circuit device

Resist removing method in multilayered resist process