Microstrip Lines I: Quasi-Static Analyses, Dispersion Models, and Measurements -Introduction. Quasi-Static Analyses of a Microstrip. Microstrip Dispersion Models. Microstrip Transitions. Microstrip Measurements. Fabrication. Microstrip Lines II: Fullwave Analyses, Design Considerations, and Applications - Methods of Fullwave Analysis. Analysis of an Open Microstrip. Analysis of an Enclosed Microstrip. Design Considerations. Other Types of Microstrip Lines. Microstrip Applications. Microstrip Discontinuities I: Quasi-Static Analysis and Characterization -Introduction. Discontinuity Capacitance Evaluation. Discontinuity Inductance Evaluation. Characterization of Various Discontinuities. Compensated Microstrip Discontinuities. Microstrip Discontinuities II: Fullwave Analysis and Measurements - Planar Waveguide Analysis. Fullwave Analysis of Discontinuities. Discontinuity Measurements. Slotlines -Introduction. Slotline Analysis. Design Considerations. Slotline Discontinuities. Variants of Slotline. Slotline Transitions. Slotline Applications. Defected Ground Structure (DGS) -Introduction. DGS Characteristics. Modeling of DGS. Applications of DGS. Coplanar Lines: Coplanar Waveguide and Coplanar Strips -Introduction. Analysis. Design Considerations. Losses in Coplanar Lines. Effect of Tolerances. Comparison with Microstrip Line and Slotline. Transitions. Discontinuities in Coplanar Lines. Coplanar Line Circuits. Coupled Microstrip Lines -Introduction. General Analysis of Coupled Lines. Characteristics of Coupled Microstrip Lines. Measurements on Coupled Microstrip Lines. Design Considerations for Coupled Microstrip Lines. Slot-Coupled Microstrip Lines. Coupled Multiconductor Microstrip Lines. Discontinuities in Coupled Microstrip Lines. Substrate Integrated Waveguide (SIW) -Introduction. Analysis Techniques of SIW. Design Considerations. Other SIW Configurations. Transitions Between SIW and Planar Transmission Lines. SIW Components and Antennas. Fabrication Technologies and Materials.

Microstrip Lines and Slotlines

Multiconductor or multiwire arrangements find many applications in electronic systems. Examples are interconnections between digital circuits or integrated microwave circuits. Equivalent circuit models are derived here from an integral equation to establish an electrical description of the physical geometry. The models, which are appropriately called partial element equivalent circuits (PEEC), are general in that they include losses. Models of different complexity can be constructed, to suit the application at hand.

Equivalent Circuit Models for Three-Dimensional Multiconductor Systems

Equivalent Circuit Models for Tliree-Dirnensional Multiconductor Systems

Foreword by David Leeson. Preface. 1. RF/Microwave Systems. 2. Lumped and Distributed Elements. 3. Active Devices. 4. Two-Port Networks. 5. Impedance Matching. 6. Microwave Filters. 7. Noise in Linear Two-Ports. 8. Small- and Large-Signal Amplifier Design. 9. Power Amplifier Design. 10. Oscillator Design. 11. Microwave Mixer Design. 12. RF Switches and Attenuators. 13. Microwave Computer-Aided Workstations foor MMIC Requirements. Appendix A: BIP: Gummel-Poon Bipolar Transistor Model. Appendix B: Level 3 MOSFET. Appendix C: Noise Parameters of GaAs MESFETs. Appendix D: Derivations for Unilateral Gain Section. Appendix E: Vector Representation of Two-Tone Intermodulation Products. Appendix F: Passive Microwave Elements. Index.

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Microwave Circuit Design Using Linear and Nonlinear Techniques

A method for determining the accuracy of computed impedance and wavelength data for microstrip is proposed. It is shown that the standard equations of Wheeler and Schneider have rather large errors. Revised equations for microstrip impedance and wavelength are given both for analysis and synthesis with accuracy better than 1%. A simple, accurate equation for the microstrip open circuit is presented. Experimental data on microstrip T-junctions are compared with existing theories. A new accurate equation is given for the reference plane displacement in the stub arm. Corrections are proposed in the existing equations for the other parameters of the equivalent circuit.

Equations for Microstrip Circuit Design

The excess charge density distribution near gaps and steps in microstrip transmission lines is calculated by the solution of singular integral equations. Data are presented for gaps in microstrips of width-to-substrate-thickness ratios of 0.5, 1.0, and 2.0 and relative dielectric constants ranging from 1.0 to 15.0. For steps in a microstrip line results are given for width-to-thickness ratio of unity, relative dielectric constants of 1.0 and 9.6, while the change of width-to-height ratio is from 0.1 to 10.0. The excess charges are calculated explicitly in relatively short computing times, and the results are believed to be accurate to within a few percent.

Equivalent Capacitances for Microstrip Gaps and Steps

The integral equations that describe the charge distribution near an open-circuited microstrip end are formulated and subsequently solved by a projective method. The solution hinges on development of computationally efficient techniques for dealing with the singularities that occur by special quadrature formulas. The necessary formulas are described and tabulated. These techniques are then used to find open-circuit capacitance values for microstrip. It is found that the curves of excess capacitance versus width are easily describable by empirical equations; such equations are presented, along with the curves themselves. For strip widths between 0.1 and 10 times the substrate thickness and for dielectric constants in the range 1-51, the given data are believed accurate to within a few percent.

Equivalent Capacitances of Microstrip Open Circuits

The integral equations governing the electrostatics of the excess charge distribution near microstrip rightangle bends, T junctions, and crossings are formulated and subsequently solved by a projective method. Extensive discontinuity capacitances are presented in graphical form. Where possible, the data are compared to the available experimental results.

Microstrip Discontinuity Capacitances for Right-Angle Bends, T Junctions, and Crossings

To determine the capacitance between two rectangular parallel plates separated by a dielectric sheet, the charge distribution on the plates is formulated in terms of a Fredholm integral equation of the first kind. This equation is solved numerically by a projective method using polynomial approximants. The resulting capacitance values are given in normalized graphical form, permitting capacitance determination for any practical values of dielectric constant and geometric parameters to within a few percent.

Capacitance of Parallel Rectangular Plates Separated by a Dielectric Sheet

In the above paper, due to a programming error, Fig. 7 on page 345 for bend capacitance is incorrect and should appear as shown in the following.

P. Benedek

Papers

Equivalent Capacitances for Microstrip Gaps and Steps

Equivalent Capacitances of Microstrip Open Circuits

Microstrip Discontinuity Capacitances for Right-Angle Bends, T Junctions, and Crossings

Capacitance of Parallel Rectangular Plates Separated by a Dielectric Sheet

Correction to "Microstrip Discontinuity Capacitances for Right-Angle Bends, T Junctions, and Crossings" (Letters)