The historical beginnings of photosensitivity and fiber Bragg grating (FBG) technology are recounted. The basic techniques for fiber grating fabrication, their characteristics, and the fundamental properties of fiber gratings are described. The many applications of fiber grating technology are tabulated, and some selected applications are briefly described.

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Fiber Bragg grating technology fundamentals and overview

We present a new class of long-period fiber gratings that can be used as in-fiber, low-loss, band-rejection filters. Photoinduced periodic structures written in the core of standard communication-grade fibers couple light from the fundamental guided mode to forward propagating cladding modes and act as spectrally selective loss elements with insertion losses act as backreflections <-80 dB, polarization-mode-dispersions <0.01 ps and polarization-dependent-losses <0.02 dB.

Long-period fiber grating as band-rejection filters

Long-period fiber gratings as band-rejection filters

Erbium-doped fiber amplifiers are modeled using the propagation and rate equations of a homogeneous two-level laser medium. Numerical methods are used to analyze the effects of optical modes and erbium confinement on amplifier performance, and to calculate both the gain and amplified spontaneous emission (ASE) spectra. Fibers with confined erbium doping are completely characterized from easily measured parameters: the ratio of the linear ion density to fluorescence lifetime, and the absorption of gain spectra. Analytical techniques then allow accurate evaluation of gain, saturation, and noise in low-gain amplifiers (G >

Modeling erbium-doped fiber amplifiers

Erbium doped materials are of great interest in thin film integrated optoelectronic technology, due to their Er3+ intra-4f emission at 1.54 μm, a standard telecommunication wavelength. Er-doped dielectric thin films can be used to fabricate planar optical amplifiers or lasers that can be integrated with other devices on the same chip. Semiconductors, such as silicon, can also be doped with erbium. In this case the Er may be excited through optically or electrically generated charge carriers. Er-doped Si light-emitting diodes may find applications in Si-based optoelectronic circuits. In this article, the synthesis, characterization, and application of several different Er-doped thin film photonic materials is described. It focuses on oxide glasses (pure SiO2, phosphosilicate, borosilicate, and soda-lime glasses), ceramic thin films (Al2O3, Y2O3, LiNbO3), and amorphous and crystalline silicon, all doped with Er by ion implantation. MeV ion implantation is a technique that is ideally suited to dope these materials with Er as the ion range corresponds to the typical micron dimensions of these optical materials. The role of implantation defects, the effect of annealing, concentration dependent effects, and optical activation are discussed and compared for the various materials.

Erbium implanted thin film photonic materials

We report on the concentration- and pump-dependent lifetimes of the spontaneous emission in Er/sup 3+/-doped fibers and Er/sup 3+/-doped waveguides. In addition, we measure the concentration dependence of the 550-nm fluorescence due to excited state absorption (ESA). >

Concentration-dependent /sup 4/I/sub 13/2/ lifetimes in Er/sup 3+/-doped fibers and Er/sup 3+/-doped planar waveguides

We report on the gain characteristics of a low threshold (8 mW) Er/sup 3+/-doped planar optical waveguide amplifier. Net fiber to fiber gain of 4.5 dB is achieved at a signal wavelength of 1536 nm with 80 mW of 980-nm pump power. This device represents significant progress toward a planar amplifier module pumped by a single laser diode.

8-mV threshold Er/sup 3+/-doped planar waveguide amplifier

We report the output saturation power, excess noise factor, and system performance of a highly concentrated Er/sup 3+/-doped planar optical waveguide amplifier. The performance data demonstrate the potential usefulness of planar optical waveguide amplifiers in system applications. >

Systems evaluation of an Er/sup 3+/-doped planar waveguide amplifier

Ultrashort mid-infrared pulses at a repetition rate of 82 MHz have been generated by difference-frequency mixing at the output of a single-cavity, two-color femtosecond Ti:sapphire laser. The center wavelengths of the midinfrared pulses are tunable from 7.5 to 12.5 microm. Their pulse durations range from 450 to 650 fs, as a function of the center wavelength.

High-repetition-rate femtosecond mid-infrared pulse generation.

Continued improvements in the performance of a multi-kilometer, low-erbium-concentration fiber amplifier made by the modified chemical vapor deposition (MCVD) seed fiber method are discussed. Transparency for a -20-dBm signal at 1.55 mu m and fiber length of 11.8 km was achieved with 20 mW of 1.48- mu m copropagating pump power. The wavelength dependence of the gain for this signal level is reported, and the distribution in small signal gain along a 22-km length using an optical domain reflectometer (OTDR) was measured. Simulations are presented to show the effect of erbium concentration, input signal level, and pump power required for transparency of a 50-km span. >

P. C. Becker

Papers

Concentration-dependent /sup 4/I/sub 13/2/ lifetimes in Er/sup 3+/-doped fibers and Er/sup 3+/-doped planar waveguides

8-mV threshold Er/sup 3+/-doped planar waveguide amplifier

Systems evaluation of an Er/sup 3+/-doped planar waveguide amplifier

High-repetition-rate femtosecond mid-infrared pulse generation.

Performance of a distributed erbium-doped dispersion-shifted fiber amplifier