Metalorganic precursors for vapour phase epitaxy

Growth of high quality AlInAs by low pressure organometallic chemical vapor deposition for high speed and optoelectronic device applications

Code: A novel MOVPE technique for the single stage growth of buried ridge double heterostructure lasers and waveguides

The Schottky barrier height of n‐type semiconducting and semi‐insulating InxAl1−xAs grown by molecular beam epitaxy has been determined on the lattice‐matched composition, x=0.523, in tension and in compression relative to their (110) oriented InP substrates. For the semiconducting material in the composition range 0.43<x<0.62, the barrier height is φbn=0.62±0.05 eV while the anomalous rise and saturation of φbn at 1.2 eV of the semi‐insulating material, within the same composition range, is attributed to the presence of AlAs clusters within an InxAl1−xAs matrix.

Schottky barrier height of InxAl1−xAs epitaxial and strained layers

The origin of unintentionally introduced n‐type conduction at the interface of epitaxially grown layer‐InP substrate is identified. From the relation between the sheet carrier concentration and the etching depth, an n‐type conducting layer was found at the epitaxial layer‐substrate interface. The sheet carrier concentration and the sheet Si concentration at the surface of the InP substrate, which was obtained by secondary ion mass spectrometry analysis, agreed well. As a result, we determined that the Si atoms caused n‐type conduction. To make clear that origin of the Si atoms, the following possibilities were investigated. One possibility was the vessel made from silicon dioxide (SiO2), which was used for etching the substrates, but it was determined not to be the cause because no significant difference was observed between a teflon or polypropylene vessel. To investigate the contamination from the air, we used metalorganic chemical vapor deposition to prepare a sample composed of a InP capping layer reg...

Origin of n‐type conduction at the interface between epitaxial‐grown layer and InP substrate and its suppression by heating in phosphine atmosphere

High quality Al0.48In0.52As layers with specular morphology and narrowest reported X-ray linewidths of 24 seconds of arc have been grown on InP substrates by LP MOVPE at temperatures of 680-710 degrees C. Background carrier concentrations were in the range 8*1515-4*1016 cm-3 with room temperature mobilities as high as 1900 cm2 V-1 s-1 for growth under optimum conditions. Doping in the range 1017-2*1018 cm-3 was achieved using a H2S/H2 mixture. Improvements in structural and electrical quality were concurrent with successful Schottky barrier measurements where barrier heights of up to phi B=0.73 eV were obtained from C-V measurements on diodes using evaporated PtAu. These results have important implications in the development of Ga0.47In0.53As/Al0.48As HEMTS and InP-based opto-electronic devices.

https://iopscience.iop.org/article/10.1088/0268-1242/3/3/011/pdf

P D Hodson

Papers

Improvements in the structural quality of Al0.48In0.52As grown by low pressure metal-organic vapour-phase epitaxy