Sol-gel synthesis of ZnO thin films

Structural and optical properties of sputtered ZnO films

Thin films of Pb(Zr,Ti)O3 have been fabricated on fused quartz or stainless steel substrates by an electron beam evaporation technique. The quality of the PZT films is examined by the x‐ray diffraction technique. Observation of the D‐E hysteresis loop has shown the films to be ferroelectric. Dielectric anomaly of the film on a stainless steel substrate has been observed around 340 °C.

Preparation of Pb(Zr,Ti)O3 thin films by an electron beam evaporation technique

There is disclosed herein an integrated scanning tunneling microscope and an integrated piezoelectric transducer and methods for making both. The device consists of one or two arm piezoelectric bimorph cantilevers (42, 46) formed by micromachining using standard integrated circuit processing steps. These cantilevers are attached to the substrate (32) at one area (80) and are free to move under the influence of piezoelectric forces which are caused by the application of appropriate voltages generated by control circuitry (88) and applied to pairs of electrodes (48, 36, 44; 52, 49, 44) formed as an integral part of the bimorph cantilever structure. The electric fields caused by the control voltages cause the piezoelectric bimorphs to move in any desired fashion within ranges determined by the design. The bimorph cantilevers have tips (66) with very sharp points formed thereon which are moved by the action of the control circuit (88) and the piezoelectric bimorphs so to stay within a very small distance of a conducting surface (84). The movements of the tip can be tracked to yield an image of the surface at atomic resolution.

Integrated scanning tunneling microscope

Growth of ZnO films on GaAs substrates with a SiO2 buffer layer by RF planar magnetron sputtering for surface acoustic wave applications

A technique for deposition of highly oriented rf‐sputtered zinc oxide films on (111) gold, (111) silicon, (0001) sapphire, and fused quartz is described. The major parameters that were controlled during deposition are substrate temperature, input rf power, deposition pressure, and the deposition atmosphere. It was found that the best results were obtained with an rf power of 160 W, a deposition at 4 μ pressure in an 80 : 20 argon : oxygen mixture, and with the substrate temperature varied between 225 and 400 °C depending on the substrate. The deposition rate varied slightly around 120 A/min, with very small variation for different substrates. The quality of the ZnO films was determined by reflection electron diffraction and scanning electron microscopy. Acoustic‐bulk‐wave and acoustic‐surface‐wave delay lines were made by this technique. In all cases, high coupling coefficients were obtained.

P. Galle

Papers

Studies of the optimum conditions for growth of rf‐sputtered ZnO films