We present a comprehensive and up-to-date compilation of band parameters for all of the nitrogen-containing III–V semiconductors that have been investigated to date. The two main classes are: (1) “conventional” nitrides (wurtzite and zinc-blende GaN, InN, and AlN, along with their alloys) and (2) “dilute” nitrides (zinc-blende ternaries and quaternaries in which a relatively small fraction of N is added to a host III–V material, e.g., GaAsN and GaInAsN). As in our more general review of III–V semiconductor band parameters [I. Vurgaftman et al., J. Appl. Phys. 89, 5815 (2001)], complete and consistent parameter sets are recommended on the basis of a thorough and critical review of the existing literature. We tabulate the direct and indirect energy gaps, spin-orbit and crystal-field splittings, alloy bowing parameters, electron and hole effective masses, deformation potentials, elastic constants, piezoelectric and spontaneous polarization coefficients, as well as heterostructure band offsets. Temperature an...

Band parameters for nitrogen-containing semiconductors

Ion implantation into gallium nitride

A study of Indium incorporation efficiency in InGaN grown by MOVPE

The structural, electrical and optical properties of Mg-doped GaN epitaxial layers grown by metalorganic chemical vapor deposition were investigated in order to optimize the p-type conduction. A series of samples exhibiting different Mg concentrations were involved with this study, and post-growth thermal annealing at temperatures ranging from 650°C to 900°C were performed under flowing N2. Under our growth conditions, these two factors, i.e. the doping level and annealing temperature, were found to strongly control the physical characteristics of the samples. The highest hole concentration, of about 7×10 17 cm −3 , was recorded for the specimen prepared with a Mg source flow rate of 0.3 μmol min−1 and subsequently annealed at 900°C without damaging the surface morphology. The corresponding as-grown wafer also exhibited the minimum X-ray rocking curve full width at half maximum in both the symmetric (0 0 2) and asymmetric (1 0 2) diffraction planes.

Characterization of Mg-doped GaN grown by metalorganic chemical vapor deposition

Photoluminescence characteristics of Mg- and Si-doped GaN thin films grown by MOCVD technique

Photoluminescence of GaN : Mg grown by metalorganic vapor-phase epitaxy (MOVPE)

The influence of Mg-concentration and carrier gas on the electrical and optical properties of GaN : Mg grown by MOVPE

Characterization of InGaN Single Layers and Quantum Wells Grown by LP‐MOVPE

We investigated the influence of doping and InGaN layer thickness on the emission wavelength and full width at half maximum (FWHM) of InGaN/GaN single quantum wells (SQW) of thicknesses between 1 nm and 5 nm by temperature and intensity resolved photoluminescence (PL). The crystalline quality of the GaN claddings was assessed by low temperature PL. The emission energy of 5 nm Si doped SQW could be tuned from 3.24 eV to 2.98 eV by reducing the deposition temperature. An increase of piezoelectric (PE) field screening with increasing deposition temperature is attributed to an increase of the SiH4 decomposition efficiency. Piezoelectric (PE) fields between 0.5 MV/cm and 1.2 MV/cm in undoped structures of varying SQW thicknesses were calculated. Two activation energies of 15 meV and 46 meV of the SQW emission could be observed in temperature resolved measurements. The higher value was assigned to the confined exciton binding energy, whereas the activation energy of 15 meV is probably due to a decrease in carrier supply from the absorption zone in the GaN cladding into the SQW.

P.H Lim

Papers

Photoluminescence of GaN : Mg grown by metalorganic vapor-phase epitaxy (MOVPE)

The influence of Mg-concentration and carrier gas on the electrical and optical properties of GaN : Mg grown by MOVPE

Characterization of InGaN Single Layers and Quantum Wells Grown by LP‐MOVPE

Characterization of undoped and Silicon-doped InGaN/GaN single quantum wells