Ohmic contacts to Gallium Nitride materials

Published data on the properties of metal-semiconductor ohmic contacts and mechanisms of current flow in these contacts (thermionic emission, field emission, thermal-field emission, and also current flow through metal shunts) are reviewed. Theoretical dependences of the resistance of an ohmic contact on temperature and the charge-carrier concentration in a semiconductor were compared with experimental data on ohmic contacts to II–VI semiconductors (ZnSe, ZnO), III–V semiconductors (GaN, AlN, InN, GaAs, GaP, InP), Group IV semiconductors (SiC, diamond), and alloys of these semiconductors. In ohmic contacts based on lightly doped semiconductors, the main mechanism of current flow is thermionic emission with the metal-semiconductor potential barrier height equal to 0.1–0.2 eV. In ohmic contacts based on heavily doped semiconductors, the current flow is effected owing to the field emission, while the metal-semiconductor potential barrier height is equal to 0.3–0.5 eV. In alloyed In contacts to GaP and GaN, a mechanism of current flow that is not characteristic of Schottky diodes (current flow through metal shunts formed by deposition of metal atoms onto dislocations or other imperfections in semiconductors) is observed.

Mechanisms of current flow in metal-semiconductor ohmic contacts

Ti∕Al-based multilayer metallizations are usually used interchangeably for n-GaN and AlGaN∕GaN epilayers. Our investigations show that, although excellent Ohmic performances were obtained on both cases, the reaction pathways/kinetics and Ohmic contact formation mechanisms of Ti∕Al∕Mo∕Au metallization on n-GaN and AlGaN∕GaN are different. In the case of n-GaN, the reaction proceeds by the formation of continuous TiN layer at the metal/GaN interface. Low-barrier Schottky contact or tunneling contact is the possible contact formation mechanisms. On AlGaN∕GaN heterostructures, the existence of the AlGaN layer significantly modifies the reaction pathway, where discrete TiN protrusions form nonuniformly along threading dislocations. The TiN protrusions penetrate through the AlGaN layer and form direct electrical link between the two-dimensional electron gas and the metal contacts which would otherwise be separated by the AlGaN barrier layer. A contact formation mechanism, similar to the “spike mechanism,” which...

Differences in the reaction kinetics and contact formation mechanisms of annealed Ti∕Al∕Mo∕Au Ohmic contacts on n-GaN and AlGaN∕GaN epilayers

This paper describes recent technological advances on III-nitride-based transistors for power switching applications. Focuses are placed on the progress toward enhancing the breakdown voltage, lowering the ON-resistance, suppressing current collapse, and reducing the leakage current in AlGaN/GaN high-electron mobility transistors (HEMTs). Recent publications revealed that the tradeoff relation between ON-resistance and breakdown voltage in AlGaN/GaN HEMTs exceeded the SiC limit and was getting close to the GaN limit; however, the breakdown voltage achieved was still lower than the theoretical impact ionization limit. A novel process featuring strain-controlled annealing with a metal stack, including Al gave rise to significant reduction in the sheet resistance in AlGaN/GaN heterostructures, suggesting the possibility of dramatic reduction in ON-resistance of GaN-based power devices. Some of the interesting approaches to suppress current collapse indicated that surface trapping effects must be controlled by the optimization of surface processing as well as by the reduction of bulk traps in the epitaxial layers. Close correlation between the local gate leakage current and point defects exposed on the free-standing GaN substrate demonstrated that further reduction of defects on bulk GaN substrates is truly required as future challenges.

Low-Loss and High-Voltage III-Nitride Transistors for Power Switching Applications

A standard metallization scheme for the formation of Ohmic contacts on n-type GaN does exist. It has the following multilayer structure: Ti∕Al∕metal∕Au. Ti is known to extract N out of the GaN. This leaves a high density of N vacancies (donors) near the interface pinning the Fermi level. The created tunnel junction is responsible for an Ohmic contact behavior. Au is deposited as the final metal layer to exclude oxidation of the contact and the metal should limit the diffusion of Au into the layers below and vice versa. Al in the metallization scheme is known to improve the contact resistance, but the reason why has not been reported yet. We studied Ti and Ti∕Al contacts on GaN and AlGaN∕GaN as a function of annealing temperature by transmission electron microscopy. The role of Al in the metal multilayer, and of Al in the AlGaN on the Ohmic contact formation, has been determined. The latter result indicates that the standard metallization scheme for GaN cannot be simply transferred to AlGaN∕GaN structures.

http://ematweb.cmi.ua.ac.be/emat/pdf/1308.pdf

The role of Al on Ohmic contact formation on n-type GaN and AlGaN∕GaN

The transport properties of the advancing interface ohmic contact to AlGaN/GaN heterostructure field-effect transistors have been investigated. We found that carrier transport across the AlGaN barrier layer is dominated by the tunneling of electrons that originate from the two-dimensional electron gas located at the AlGaN/GaN interface. The observed temperature dependence of the specific contact resistivity is different from that of the contact on highly doped bulk semiconductors, although tunneling current dominates the carrier transport in both cases.

P. M. Asbeck

Papers

Transport properties of the advancing interface ohmic contact to AlGaN/GaN heterostructures