Ceramic nanofibers (NFs) have recently been developed for advanced applications due to their unique properties. In this article, we review developments in electrospun ceramic NFs with regard to their fabrication process, properties, and applications. We find that surface activity of electrospun ceramic NFs is improved by post pyrolysis, hydrothermal, and carbothermal processes. Also, when combined with another surface modification methods, electrospun ceramic NFs result in the advancement of properties and widening of the application domains. With the decrease in diameter and length of a fiber, many properties of fibrous materials are modified; characteristics of such ceramic NFs are different from their wide and long (bulk) counterparts. In this article, electrospun ceramic NFs are reviewed with an emphasis on their applications as catalysts, membranes, sensors, biomaterials, fuel cells, batteries, supercapacitors, energy harvesting systems, electric and magnetic parts, conductive wires, and wearable electronic textiles. Furthermore, properties of ceramic nanofibers, which enable the above applications, and techniques to characterize them are briefly outlined.

Electrospun Ceramic Nanofiber Mats Today: Synthesis, Properties, and Applications.

Inverted perovskite solar cells incorporating RF sputtered NiO thin films as a hole transport layer and window layer are demonstrated. The electrical and optical properties of the NiO thin films are engineered using varied sputtering conditions. The localized states within bandgap owing to its crystal disorder and nonstoichiometric features affect the transmittance and the optical bandgap of the NiO thin films which in turn influences the Jsc of the perovskite solar cells. In addition, the electrical properties of the NiO thin films can be also varied during sputtering condition affecting the concentration of nickel vacancies and the resulting hole concentration. The conductivity largely originates from the hole concentration relating to the density of states in the NiO thin films which influence the fill factor (FF) of the solar cells. The solar cells fabricated with the NiO thin films made at 4 Pa of deposition pressure show highest performance owing to excellent transmittance and wider bandgap along with moderate conductivity. With further optimization, the perovskite solar cells exhibit ~20 mA/cm2 of Jsc and a 12.4% PCE (11.3% of averaged PCE).

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Engineered optical and electrical performance of rf-sputtered undoped nickel oxide thin films for inverted perovskite solar cells.

While p-type transparent conducting materials (TCMs) are crucial for many optoelectronic applications, their performance is still not satisfactory. This has impeded the development of many devices such as photovoltaics, sensors, and transparent electronics. Among the various p-type TCMs proposed so far, Cu-based oxides and oxychalcogenides have demonstrated promising results in terms of their optical and electrical properties. Hence, they are the focus of this current review. Their basic material properties, including their crystal structures, conduction mechanisms, and electronic structures will be covered, as well as their device applications. Also, the development of performance enhancement strategies including doping/co-doping, annealing, and other innovative ways to improve conductivity will be discussed in detail.

https://www.mdpi.com/2079-6412/9/2/137/pdf

Transparent p-Type Semiconductors: Copper-Based Oxides and Oxychalcogenides

One of the major limitations of oxide semiconductors technology is the lack of proper p-type materials to enable devices such as pn junctions, light-emitting diodes, and photodetectors. This limitation has resulted in an increased research focus on these materials. In this work, p-type NiOx thin films with tunable optical and electrical properties as well as its dependence with oxygen pressure during pulsed laser deposition are demonstrated. The control of NiOx films resistivity ranged from ∼109 to ∼102 Ω cm, showing a p-type behavior with Eg tuning from 3.4 to 3.9 eV. Chemical composition and the resulting band diagrams are also discussed. The all-oxide NiOx–Ga2O3 pn junction showed very low leakage current, an ideality factor of ∼2, 105 on/off ratio, and 0.6 V built-in potential. Its J–V temperature dependence is also analyzed. C–V measurements demonstrate diodes with a carrier concentration of 1015 cm–3 for the Ga2O3 layer, which is fully depleted. These results show a stable, promising diode, attracti...

Tunable Electrical and Optical Properties of Nickel Oxide (NiOx) Thin Films for Fully Transparent NiOx–Ga2O3 p–n Junction Diodes

Native defects in semiconductors play an important role in their optoelectronic properties. Nickel oxide (NiO) is one of the few wide-gap p-type oxide semiconductors and its conductivity is believed to be controlled primarily by Ni-vacancy acceptors. Herein, we present a systematic study comparing the optoelectronic properties of stoichiometric NiO, oxygen-rich NiO with Ni vacancies (NiO:VNi), and Ni-rich NiO with O vacancies (NiO:VO). The optical properties were obtained by spectroscopic ellipsometry, while valence band spectra were probed by high-resolution x-ray photoelectron spectroscopy. The experimental results are directly compared to first-principles density functional theory + U calculations. Computational results confirm that gap states are present in both NiO systems with vacancies. Gap states in NiO:Vo are predominantly Ni 3d states, while those in NiO:VNi are composed of both Ni 3d and O 2p states. The absorption spectra of the NiO:VNi sample show significant defect-induced features below 3.0 eV compared to NiO and NiO:VO samples. The increase in sub-gap absorptions in NiO:VNi can be attributed to gap states observed in the electronic density of states. The relation between native vacancy defects and electronic and optical properties of NiO are demonstrated, showing that at similar vacancy concentration, the optical constants of NiO:VNi deviate significantly from those of NiO:VO. Our experimental and computational results reveal that although VNi are effective acceptors in NiO, they also degrade the visible transparency of the material. Hence, for transparent optoelectronic device applications, an optimization of native VNi defects with extrinsic doping is required to simultaneously enhance p-type conductivity and transparency.

Vacancy defects induced changes in the electronic and optical properties of NiO studied by spectroscopic ellipsometry and first-principles calculations

Highly conductive and transparent NiOx films can be very useful as buffer layers for the optimization of the p-type contacts of optoelectronic devices. Thin NiOx films were fabricated by reactive radio frequency (RF) sputtering at room temperature starting from a Ni target. A systematic study of the influence of oxygen partial pressure, RF power and sputtering gas pressure on the films' properties was carried out. The structural, microstructural, optical and electrical properties were affected differently by the sputtering parameters. Resistivity decreased by increasing the oxygen partial pressure and the sputtering total pressure and by decreasing the RF power, while transmittance increased by decreasing the oxygen partial pressure and by increasing the RF power and sputtering pressure. Minimum resistivity of 1.6 × 10−2 Ωcm and a visible transmittance of 40% were achieved for a film grown in a pure oxygen atmosphere, while a higher transmittance of 54% and a resistivity of ρ = 1.1 × 10−1 Ωcm were obtained for a film grown at 30% oxygen partial pressure. The trends of transmittance and resistivity as a function of the oxygen pressure during the sputtering process can be explained in terms of the amount of Ni3+ defects deduced by x-ray photoelectron spectroscopy (XPS) measurements. The full interpretation of the other results is less straightforward and highlights the relevance of the samples' structural properties.

https://iopscience.iop.org/article/10.1088/0268-1242/31/5/055016/pdf

P. Nunziante

Papers

Effect of growth parameters on the properties of RF-sputtered highly conductive and transparent p-type NiOx films

Transparent nanostructured electrodes: Electrospun NiO nanofibers/NiO films