We report on a novel triple transit region (TTR) layer structure for 1.55 μm waveguide photodiodes (PDs) providing high output power in the millimeter wave (mmW) regime. Basically, the TTR-PD layer structure consists of three transit layers, in which electrons drift at saturation velocity or even at overshoot velocity. Sufficiently strong electric fields (>3000 V/cm) are achieved in all three transit layers even in the undepleted absorber layer and even at very high optical input power levels. This is achieved by incorporating three 10 nm thick p-doped electric field clamp layers. Numerical simulations using the drift-diffusion model (DDM) indicate that for optical intensities up to ~500 kW/cm2, no saturation effects occur, i.e. the electric field exceeds the critical electric field in all three transit layers. This fact in conjunction with a high-frequency double-mushroom cross-section of the waveguide TTR-PD ensures high output power levels at mmW frequencies. Fabricated 1.55 µm InGaAs(P)/InP waveguide TTR-PDs exhibit output power levels exceeding 0 dBm (1 mW) and a return loss (RL) up to ~24 dB. Broadband operation with a 3 dB bandwidth beyond 110 GHz is achieved.

Triple transit region photodiodes (TTR-PDs) providing high millimeter wave output power

In this paper, two SPR biosensor configurations utilizing Fe2O3 layer coupled with Au thin film in the angular interrogation mode have been proposed and analyzed theoretically. The proposed configurations are prism—Au–Fe2O3–Au—sensing medium and prism—Fe2O3–Au–Fe2O3—sensing medium. The reflectivity was calculated as a function of incident angle based on Fresnel coefficients for transverse magnetic polarized light. The thicknesses of Au and Fe2O3 layers have been optimized to achieve the best performance of the sensor. The optimized sensitivities are 171.3 deg RIU−1 and 205.4 deg RIU−1 for the two configurations, respectively. The optimized two sensor configurations can be easily fabricated with high sensitivity than the many previously reported in the literature. Therefore, the proposed structures will find a broad range of applications in biomedical, label-free chemical and environmental protection.

Highly sensitive Au–Fe 2 O 3 –Au and Fe 2 O 3 –Au–Fe 2 O 3 biosensors utilizing strong surface plasmon resonance

The extraction of the effective mobility on In0.53 Ga0.47As metal-oxide-semiconductor field-effect transistors (MOSFETs) is studied and shown to be greater than 3600 cm2/V middots. The removal of C it response in the split C-V measurement of these devices is crucial to the accurate analysis of these devices. Low-temperature split C-V can be used to freeze out the D it response to the ac signal but maintain its effect on the free carrier density through the substrate potential. Simulations that match this low-temperature data can then be ldquowarmed uprdquo to room temperature and an accurate measure of Q inv is achieved. These results confirm the fundamental performance advantages of In0.53Ga0.47As MOSFETs.

Extraction of the Effective Mobility of $ \hbox{In}_{0.53}\hbox{Ga}_{0.47}\hbox{As}$ MOSFETs

Si/SiO 2 超晶格晶化特性影响因素分析

Vertical cavity surface emitting lasers (VCSELs) were realized in MBE-grown GaAS/A1GaAS and
MOVPE-grown InGaAsPfEnP material systems with emission wavelengths near 087 and 13 pm
respectively The GaAS/A1GaAS VCSELs incorporating epitaxially grown DBR mirrors on both sides of
the cavities were operated at room temperature cw condition with maximum output power greater than 1
mW The InGaAsP/InP VCSEL, which employed a much simpler cavity structure containing metal and
dielectric mirrors, operated up to 220 K with a threshold current as low as 5 mA at 77K, indicating that
improvements on the cavity design should yield room temperature lasing operation Single longitudinal
mode emission and circular near- and far-field patterns were observed for the two VCSEL structures

Vertical cavity surface emitting laser diodes

FDTD simulation of Kretschmann based Cr-Ag-ITO SPR for refractive index sensor

Effect of Halo structure variations on the threshold voltage of a 22 nm gate length NMOS transistor

The fitted parameters for the analytic function used to specify doping- and temperature-dependent low-field mobilities for In0.53Ga0.47As is described in this paper. The developed model was compared with other mobility models as well as measured Hall data from periodical literature and very good agreement is observed. The result of this work was used to develop an In0.53Ga0.47As interdigitated lateral p-i-n photodiode (ILPP) model and good correlation was obtained when compared with the experimentally developed device. The results of this work would be useful in the development of In0.53Ga0.47As-based devices using commercial device simulation packages.

Concentration and temperature-dependent low-field mobility model for In0.53Ga0.47As interdigitated lateral pin PD

Microring resonator (MRR)-based channel dropping filters have been extensively explored because of the high quality
factor, compact size, and easy integration of fabrication. In order to design an excellent MRR wavelength filter,
optimization of the design parameters are essential. In this paper, the design trade-off ofMRR-based channel dropping
filter was statistically studied by employing the Taguchi method. Four control factors considered were width of rings
and channels, radii of the microring, upper rib waveguide height, and gap size. The analysis of variancewas adopted to
analyze significant trends that occurred on the free spectral range (FSR) and insertion loss (IL) performance under
different sets of control factor combinations. The best parametric combination of control factors was identified in order
to achieve a balance performance between large FSR and low IL using Finite-Difference Time Domain (FDTD)
simulation by RSoft Inc. After optimization, the value of FSR and IL obtained was 17nm and 0.245 dB, respectively.
Confirmation tests were carried out to verify the optimized parametric combinations and a new parametric combination
considering both outputs were 16nm and 0.215 dB. The optimal combinations were 6 mm ring radius with the
separation gap of 50 nm and 350 nm350 nm rib waveguide cross section. Copyright © 2013 John Wiley & Sons,
Ltd.

Application of statistical method to investigate the effects of design parameters on the performance of microring resonator channel dropping filter

The fitted parameters for the analytic function used to specify the doping dependence of minority carrier lifetimes for In0.53Ga0.47As (InGaAs) is described in this paper. This model together with other carrier models was used to develop an interdigitated lateral PIN photodiode utilizing InGaAs as the absorbing layer. We propose the usage of spin-on chemicals such as spin-on dopants and spin-on glass to form the p+ wells, n+ wells and the surface passivation layer of the device hence providing a cheap and easy solution versus the conventional epitaxial growth methodology. The modeled device achieved dark currents of 0.21 nA and capacitance of 2.87 nF at an operating voltage of 5 V. Optical illumination at a wavelength of 1550 nm and power of 10 W/cm2 enabled the device to achieve responsivity of 0.56 A/W and external quantum efficiency of 44%. The −3 dB frequency response of the device was at 8.93 GHz and signal-to-noise ratio is 36 dB. The developed device shows close correlation with experimentally developed devices developed using other fabrication methodologies. The results of this work would be useful in the thorough development of InGaAs-based devices based on spin-on chemical fabrication methodology using commercial device simulation packages. Copyright © 2010 John Wiley & Sons, Ltd.

Concentration-dependent minority carrier lifetime in an In 0.53 Ga 0.47 As interdigitated lateral PIN photodiode model based on spin-on chemical fabrication methodology

P. S. Menon

Papers

FDTD simulation of Kretschmann based Cr-Ag-ITO SPR for refractive index sensor

Effect of Halo structure variations on the threshold voltage of a 22 nm gate length NMOS transistor

Concentration and temperature-dependent low-field mobility model for In0.53Ga0.47As interdigitated lateral pin PD

Application of statistical method to investigate the effects of design parameters on the performance of microring resonator channel dropping filter

Concentration-dependent minority carrier lifetime in an In 0.53 Ga 0.47 As interdigitated lateral PIN photodiode model based on spin-on chemical fabrication methodology