다중혈관 관상동맥 환자에서 y-문합을 이용하여 양쪽 내흉동맥만을 사용한 우회술의 조기 성적

[신간의 별자리x] 우리/미술, 그리고 ‘슬픔의 박물관’

Thanks to their remarkable mechanical, electrical, thermal, and barrier properties, graphene-based nanocomposites have been a hot area of research in the past decade. Because of their simple top-down synthesis, graphene oxide (GO) and reduced graphene oxide (rGO) have opened new possibilities for gas barrier, membrane separation, and stimuli-response characteristics in nanocomposites. Herein, we review the synthesis techniques most commonly used to produce these graphene derivatives, discuss how synthesis affects their key material properties, and highlight some examples of nanocomposites with unique and impressive properties. We specifically highlight their performances in separation applications, stimuli-responsive materials, anti-corrosion coatings, and energy storage. Finally, we discuss the outlook and remaining challenges in the field of practical industrial-scale production and use of graphene-derivative-based polymer nanocomposites.

Synthesis, properties, and applications of graphene oxide/reduced graphene oxide and their nanocomposites

Graphene quantum dots (GQDs) that are flat 0D nanomaterials have attracted increasing interest because of their exceptional chemicophysical properties and novel applications in energy conversion and storage, electro/photo/chemical catalysis, flexible devices, sensing, display, imaging, and theranostics. The significant advances in the recent years are summarized with comparative and balanced discussion. The differences between GQDs and other nanomaterials, including their nanocarbon cousins, are emphasized, and the unique advantages of GQDs for specific applications are highlighted. The current challenges and outlook of this growing field are also discussed.

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Recent Advances on Graphene Quantum Dots: From Chemistry and Physics to Applications

Electro-spinning of cellulose acetate nanofibers/Fe/carbon dot as photoluminescence sensor for mercury (II) and lead (II) ions.

Graphene quantum dots from chemistry to applications

Colloidal quantum dots (CQDs) as photodetector materials have attracted much attention in recent years due to their tunable energy bands, low cost, and solution processability. However, their intrinsically low carrier mobility and three-dimensional (3D) confinement of charges are unsuitable for use in fast-response and highly sensitive photodetectors, hence greatly restricting their application in many fields. Currently, 3D topological insulators, such as bismuth telluride (Bi2Te3), have been employed in high-speed broadband photodetectors due to their narrow bulk bandgap, high carrier mobility, and strong light absorption. In this work, the advantages of topological insulators and CQDs were realized by developing a hybrid Bi2Te3/PbS CQDs photodetector that exhibited a maximum responsivity and detectivity of 18 A/W and 2.1 × 1011 Jones, respectively, with a rise time of 128 μs at 660 nm light illumination. The results indicate that such a photodetector has potential application in the field of fast-response and large-scale integrated optoelectronic devices.

/pdf/fast-response-photodetector-based-on-hybrid-bi2te3-pbs-3dzdzyoq.pdf

Fast-Response Photodetector Based on Hybrid Bi2Te3/PbS Colloidal Quantum Dots

Lead sulfide colloidal quantum dots (PbS CQDs) are promising optoelectronic materials due to their unique properties, such as tunable band gap and strong absorption, which are of immense interest for application in photodetectors and solar cells. However, the tunable band gap of PbS CQDs would only cover visible short-wave infrared; the ability to detect longer wavelengths, such as mid- and long-wave infrared, is limited because they are restricted by the band gap of the bulk material. In this paper, a novel photodetector based on the synergistic effect of PbS CQDs and bismuth telluride (Bi2Te3) was developed for the detection of a mid-wave infrared band at room temperature. The device demonstrated good performance in the visible-near infrared band (i.e., between 660 and 850 nm) with detectivity of 1.6 × 1010 Jones at room temperature. It also exhibited photoelectric response in the mid-wave infrared band (i.e., between 4.6 and 5.1 μm). The facile fabrication process and excellent performance (with a response of up to 5.1 μm) of the hybrid Bi2Te3/PbS CQDS photodetector are highly attractive for many important applications that require high sensitivity and broadband light detection.

Room Temperature Broadband Bi2Te3/PbS Colloidal Quantum Dots Infrared Photodetectors

Colloidal quantum dots (CQDs) have been widely applied in the design and development of optoelectronic devices due to their controllable size, tunable band gap and inexpensive low temperature solution processing etc. However, the preparation method of quantum dots film is a critical part of the preparation process of optoelectronic devices, which can restrict the application of CQDs in optoelectronic devices. In this paper, different preparation technologies of CQDs film are summarized. The advantages and disadvantages of different preparation technologies of CQDs film are discussed to suggest suitable options for different CQDs film based optoelectronic devices.

Research progress in the preparation of quantum dot films for optoelectronic devices

Photodetectors convert optical signals into electrical signals and have found many important applications ranging from environmental monitoring to communication systems. At present, most photodetectors are based on either bulk materials or epitaxially grown materials (such as InSb and HgCdTe), which limit its widespread applications due to relatively high fabrication cost. However, photodetector based on organic polymer/colloidal quantum dots (CQDs) can provide a low-cost alternative. In this paper, a broadband photodetector consisting of organic polymer phenyl-c61-butyric acid methyl ester (PCBM) and PbS CQDs was fabricated. Combining the advantages of PbS CQDs and organic polymer PCBM, the device demonstrated good spectral response ranging from the UV to the NIR with a maximum responsivity and detectivity of 0.3 A/W and 6.6 × 1011 Jones, respectively, under illumination of 850 nm incident light. The device can be fabricated on almost any substrate due to the solution-processibility of CQDs. Furthermore, the use of organic polymer substrate can significantly reduce the cost of device and broaden its applications (such as in flexible electronics). This work provides a simple and efficient strategy to fabricate photodetector that exhibits multi-band response at relatively low-cost.

P. Tian

Papers

Graphene quantum dots from chemistry to applications

Fast-Response Photodetector Based on Hybrid Bi2Te3/PbS Colloidal Quantum Dots

Room Temperature Broadband Bi2Te3/PbS Colloidal Quantum Dots Infrared Photodetectors

Research progress in the preparation of quantum dot films for optoelectronic devices

Solution-processed PbS colloidal quantum dots/PCBM based photodetector for multispectral detection