This paper presents a users' perspective of simulation in power electronic and motion control systems. The rationale for simulation in research, education and in the design process, and the details of how simulation is carried out are discussed. Characteristics of a reliable simulation program are outlined and the hierarchical approach to simulation is stressed. Numerical solution issues in the simulation of "stiff" systems such as power electronics and motion control are discussed in general terms. A brief overview of the widely used simulation programs is provided along with the challenges in modeling the semiconductor devices. In conclusion, observations are made with respect to the future role and nature of computer simulations. >

Simulation of power electronic and motion control systems-an overview

The current status of research in the field of power semiconductor device models is reviewed. For this purpose, the basic modeling problems and research issues, which have to be overcome in this field, are discussed. Some new and quite promising modeling concepts have been proposed, which are compared with more traditional ways of achieving an efficient tradeoff between the necessary accuracy, required simulation speed, and feasibility of parameter determination. From this comparison, a prediction of the future evolution of circuit simulation models for power semiconductor devices naturally emerges. Many of the different concepts are expected to survive only in an application niche, where their specific points of strength are important. However, three modeling concepts have already been proven to be successfully applicable to the complete spectrum of power semiconductor devices and have their strength for different grades of complexity of the power circuit. A revolutionary development from anticipated or long-due breakthroughs is on the other hand not expected in the foreseeable future.

Status and trends of power semiconductor device models for circuit simulation

The charge control approach to modeling is extended to power devices by converting device equations to charge modules, which can then be used to assemble device models. This method represents a systematic technique for constructing models for power electronic circuit simulation. The resulting models are represented by relatively simple functions which are valid over a wide range of operation. >

A systematic approach to modeling of power semiconductor devices based on charge control principles

This paper discusses the possible estimation of IGBT failure phenomena by means of simulation. The studied destruction mode addresses the large surges, especially the short-circuit of IGBTs. In this case the reason of the device destruction is a thermal runaway. Thus we have developed an electrothermal model of the IGBT. The developed model may be implemented in any circuit simulator featuring a high level description language (SABER, ELDO, SMASH, PACTE etc.). The used electrical model is based on the Hefner model of the IGBT. A bidimensional finite element thermal model is considered. This model has been optimized to give a good trade-off between accuracy and simulation cost. To validate the implemented model, finite element simulations have been performed with the ATLAS two-dimensional (2-D) numerical simulator. The study is completed with the comparison between experimental and simulation results. It is shown that the proposed electrothermal model allows the prediction of the IGBT destruction phases in the case of large surges. So, users of IGBT components have the possibility to estimate, by mean of simulation, the possible failure (due to large surges) of these devices in the case of complex converters. This enables the possibility for developing protection systems for IGBTs without any destructive test.

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Electrothermal modeling of IGBTs: application to short-circuit conditions

A power diode model for circuit simulations is described. All important phenomena like transient behavior, temperature dependence, emitter recombination, mobile charge carriers in depletion layer, carrier multiplication, and self-heating are included. Comparisons between simulations and measurements show less than 10% deviation of current and voltage over the temperature range of 25 degrees C-125 degrees C. >

A precise model for the transient characteristics of power diodes

A physical silicon-controlled rectifier (SCR) model is developed by using the lumped-charge modeling technique to simplify device physics. The model is based on fundamental semiconductor equations and includes most important SCR characteristics; yet it is simple enough to use in circuit simulators. This SCR model is the first to provide correct turn-on and turn-off waveforms for simulation of power switching circuits. >

A physically-based lumped-charge SCR model

This paper describes how the self4eating effect is included in power device models which are used for circuit simulations. As examples the thermal characteristics of the power MOSFET and the reverse diode are presented. Self-heating is determined by the power dissipation and by the thermal resistance and capacitance of device and package. These parameters are extracted from the observed thermal behavior of the device. The thermal and electrical device characteristics are mathematidy formulated and implemented in the circuit simulator SABER.. Results show the significance of the self-heating effect.

P. Turkes

Papers

A physically-based lumped-charge SCR model

Modelling the self-heating of power devices