Proceedings ArticleDOI
Modelling the self-heating of power devices
R. Kraus,P. Turkes,Hans Jurgen Mattausch +2 more
- pp 124-129
TLDR
In this article, the authors describe how the self-eating effect is included in power device models which are used for circuit simulations and show the significance of self-heating effect.Abstract:
This paper describes how the self4eating effect is included in power device models which are used for circuit simulations. As examples the thermal characteristics of the power MOSFET and the reverse diode are presented. Self-heating is determined by the power dissipation and by the thermal resistance and capacitance of device and package. These parameters are extracted from the observed thermal behavior of the device. The thermal and electrical device characteristics are mathematidy formulated and implemented in the circuit simulator SABER.. Results show the significance of the self-heating effect.read more
Citations
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Journal ArticleDOI
Status and trends of power semiconductor device models for circuit simulation
R. Kraus,Hans Jurgen Mattausch +1 more
TL;DR: The current status of research in the field of power semiconductor device models is reviewed in this article, where some new and quite promising modeling concepts have been proposed, which are compared with more traditional ways of achieving an efficient tradeoff between the necessary accuracy, required simulation speed and feasibility of parameter determination.
Journal ArticleDOI
Electrothermal modeling of IGBTs: application to short-circuit conditions
Anis Ammous,Kaiçar Ammous,Hervé Morel,Bruno Allard,Dominique Bergogne,F. Sellami,Jean-Pierre Chante +6 more
TL;DR: In this paper, an electrothermal model of the IGBT has been developed for the prediction of IGBT failure phases in the case of large surges, where the reason of the device destruction is a thermal runaway, and the model has been optimized to give a good tradeoff between accuracy and simulation cost.
Proceedings ArticleDOI
A precise model for the transient characteristics of power diodes
TL;DR: In this paper, a power diode model for circuit simulations is described and all important phenomena like transient behavior, temperature dependence, emitter recombination, mobile charge carriers in depletion layer, carrier multiplication, and self-heating are included.
Journal ArticleDOI
MOOSE: a physically based compact DC model of SOI LD MOSFETs for analogue circuit simulation
TL;DR: A compact model for silicon-on-insulator (SOI) laterally double diffused (LD) MOSFETs, which is intended to predict device operation in all regions of bias and is comparable with industry standard models of this complexity.
Proceedings ArticleDOI
Compact electro-thermal modeling and simulation of large area multicellular Trench-IGBT
TL;DR: In this article, an electro-thermal modeling and simulation strategy of large area multicellular Trench-IGBT (TIGBT) was proposed based on two coupled systems: a 3D thermal simulator and a 1D electrical (with temperature dependent parameters) physical model of single TIGBT cell.
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